SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY
    2.
    发明公开
    SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY 审中-公开
    SPIN-ON中间层的材料与双重和三重结构性光刻

    公开(公告)号:EP2374145A2

    公开(公告)日:2011-10-12

    申请号:EP10729436.5

    申请日:2010-01-06

    IPC分类号: H01L21/027 G03F7/20

    摘要: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

    ANTI-REFLECTIVE COATINGS USING VINYL ETHER CROSSLINKERS
    8.
    发明公开
    ANTI-REFLECTIVE COATINGS USING VINYL ETHER CROSSLINKERS 审中-公开
    ANTI REFLEX COATINGS乙烯基醚交联剂

    公开(公告)号:EP2126634A1

    公开(公告)日:2009-12-02

    申请号:EP08713979.6

    申请日:2008-01-24

    IPC分类号: G03F7/11

    CPC分类号: G03F7/091 G03F7/0392

    摘要: Novel, developer soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker, a photoacid generator, and optionally a chromophore. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light (and optionally a post exposure bake), the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers). In one embodiment, the compositions can be used to form ion implant areas in microelectronic substrates.

    POLYMERIC ANTIREFLECTIVE COATINGS DEPOSITED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
    9.
    发明公开
    POLYMERIC ANTIREFLECTIVE COATINGS DEPOSITED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 审中-公开
    通过等离子增强化学气相沉积相沉积抗反射聚合物涂层

    公开(公告)号:EP1397260A1

    公开(公告)日:2004-03-17

    申请号:EP01946350.4

    申请日:2001-06-12

    IPC分类号: B44C1/22 H01L21/00

    摘要: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene,2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 νm or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical.