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35 条记录 (耗时 0.016 秒)

    Ink jet recording system
    2.
    发明公开
    Ink jet recording system 失效
    喷墨记录系统

    公开(公告)号：EP0441635A1

    公开(公告)日：1991-08-14

    申请号：EP91301019.5

    申请日：1991-02-07

    申请人： CANON KABUSHIKI KAISHA

    发明人： Matsumoto, Shigeyuki, c/o Canon Kabushiki Kaisha ,  Saito, Asao, c/o Canon Kabushiki Kaisha ,  Naruse, Yasuhiro, c/o Canon Kabushiki Kaisha ,  Fujita, Kei, c/o Canon Kabushiki Kaisha

    IPC分类号： B41J2/05 ,  B41J2/34

    CPC分类号： B41J2/34 ,  B41J2/14129 ,  B41J2/1604 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1637 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/13

    摘要： A recording head for discharging ink by using thermal energy comprises a plurality of outlets for discharging ink and a substrate (100) including a common substrate plate (1) of P type, a plurality of electrothermal converting elements (RH1, RH2) and a plurality of functional elements (SH1, SH2) connected to the respective electrothermal converting elements (RH1, RH2) and formed on the common substrate plate (1) as well as the electrothermal converting elements (RH1, RH2). Each of the functional elements (SH1, SH2) has a first semiconductor region (2, 5) of N type, a second semiconductor region (4) of P type provided within the first semiconductor region and a third semiconductor region (8) of N type provided within the second semiconductor region (4), so as to form a rectifying junction. The first, second and third semiconductor regions are formed by diffusion of impurity atoms in the common semiconductor substrate plate (1).

    摘要翻译： 一种通过使用热能排出墨水的记录头，包括多个用于排出墨水的出口和包括P型公共衬底板（1），多个电热转换元件（RH1，RH2）和多个 连接到相应的电热转换元件（RH1，RH2）并形成在公共基板（1）上的功能元件（SH1，SH2）以及电热转换元件（RH1，RH2）。 每个功能元件（SH1，SH2）具有N型的第一半导体区域（2,5），设置在第一半导体区域内的P型的第二半导体区域（4）和N型的第三半导体区域（8） 提供在第二半导体区域（4）内，以形成整流结。 第一，第二和第三半导体区域通过在公共半导体衬底板（1）中扩散杂质原子而形成。

    Method for depositing a metal film containing aluminium by use of alkylaluminium halide
    5.
    发明公开
    Method for depositing a metal film containing aluminium by use of alkylaluminium halide 失效
    一种用于制造含有铝的沉积的金属层，用Alkylaluminiumhalid的应用过程。

    公开(公告)号：EP0498580A1

    公开(公告)日：1992-08-12

    申请号：EP92300853.6

    申请日：1992-01-31

    申请人： CANON KABUSHIKI KAISHA

    发明人： Matsumoto, Shigeyuki, c/o Canon Kabushiki Kaisha ,  Ikeda, Osamu, c/o Canon Kabushiki Kaisha

    IPC分类号： H01L21/90 ,  C23C16/20 ,  H01L21/3205 ,  H01L21/285

    CPC分类号： H01L21/76879 ,  C23C16/04 ,  C23C16/20 ,  H01L21/28562

    摘要： This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material.
    A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7 x 10⁻³ Torr to 9 x 10⁻² Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450°C or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

    摘要翻译： 本发明提供一种形成淀积膜用作具有针对任何材料良好的应力迁移性的高品质的布线层的方法，包括：如一个非单晶材料。 甲基板位于一个沉积膜形成空间，烷基铝卤化物的气体被供应到沉积膜形成空间，并且在铝的电影是在7×10的卤化烷基铝的分压上选择性地形成于电子给体表面 < - > <3>托至9×10 < - > <2>在托的卤化烷基铝的分解温度以上的范围内，450℃或更低。 当沉积是在非单晶材料要被执行的用于与氢原子端接具有电子给体表面和非电子给体表面的基板的非电子给体表面化学处理被执行，并且在沉积电影是 由非选择性沉积的方法沉积。