摘要:
An article of relatively pure silica, and a furnace and method of producing the article. The article is produced by collecting molten silica particles (24) in a refractory furnace in which at least a portion of the refractory has been exposed to a halogen-containing gas to react with contaminating metal ions in the refractory.
摘要:
The invention relates to optical glass having improved initial transmittance, formed by subjecting the glass to a hydrogen and/or deuterium treatment at a temperature, and for a duration of time sufficient to diffuse the hydrogen and/or deuterium into the glass.
摘要:
Fused silica members having high internal transmission and low birefringence are disclosed. Methods of making such fused silica members are also disclosed. According to the present invention, fused silica members having an internal transmission equal to or greater than 99.65%/cm at 193 nm and having an absolute maximum birefringence along the use axis of less than or equal to 0.75 nm/cm are provided.
摘要:
A method of producing, by flame hydrolysis, a fused silica glass containing titania which comprises delivering a mixture of a silica precursor and a titania precursor in vapor form to a flame, passing the vapor mixture through the flame to form SiO2-TiO2 particles, and depositing the particles within a furnace (40) where they melt to form a solid glass body (44).
摘要:
An optical member includes a fused silica glass having a concentration of =SiH moiety below detection limit as measured by Raman spectroscopy and a concentration of molecular hydrogen of at least 1x1017 molecules/cm3. The fused silica glass exhibits an induced absorption level which quickly attains an initial peak upon exposure to irradiation and rapidly decays to a low value. The induced absorption level after decaying to the low value remains substantially unchanged by further irradiation.
摘要:
The invention provides optical projection lithography methods, photolithography photomasks, and optical photolithography mask blanks for use in optical photolithography systems utilizing deep ultraviolet light (DUV) wavelengths below 300 nm, such as DUV projection lithography systems utilizing wavelengths in the 248 nm region and the 193 nm region. The invention provides improved production of lithography patterns by inhibiting polarization mode dispersion of lithography light utilizing low birefringence mask blanks and photomasks.