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    REFLECTIVE OHMIC CONTACTS FOR SILICON CARBIDE INCLUDING A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING THE SAME
    4.
    发明公开
    REFLECTIVE OHMIC CONTACTS FOR SILICON CARBIDE INCLUDING A LAYER CONSISTING ESSENTIALLY OF NICKEL, METHODS OF FABRICATING SAME, AND LIGHT EMITTING DEVICES INCLUDING THE SAME 审中-公开
    具有反映的碳化硅衬底欧姆接触，并且用于生产发光器件

    公开(公告)号：EP1593166A2

    公开(公告)日：2005-11-09

    申请号：EP04707133.7

    申请日：2004-01-30

    申请人： Cree Inc.

    发明人： SLATER, JR., David, B. ,  HAGLEITNER, Helmut

    IPC分类号： H01L33/00 ,  H01L21/04

    CPC分类号： H01L33/405 ,  H01L21/0485 ,  H01L33/20 ,  H01L33/34 ,  H01L2224/48091 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Reflective ohmic contacts for n-type silicon carbide include a layer consisting essentially of nickel on the silicon carbide. The layer consisting essentially of nickel is configured to provide an ohmic contact to the silicon carbide, and to allow transmission therethrough of optical radiation that emerges from the silicon carbide. A reflector layer is on the layer consisting essentially of nickel, opposite the silicon carbide. A barrier layer is on the reflector layer opposite the layer consisting essentially of nickel, and a bonding layer is on the barrier layer opposite the reflector layer. It has been found that the layer consisting essentially of nickel and the reflector layer thereon can provide a reflective ohmic contact for silicon carbide that can have low ohmic losses and/or high reflectivity.

    摘要翻译： 对于n型碳化硅反射欧姆接触包括一个层上的碳化硅基本上由镍组成的聚合物。 基本上由镍组成的层被配置为提供到欧姆接触碳化硅，并允许光辐射传输通过那里没有从碳化硅射出。 反射器层是镍基本上由，碳化硅相反的层上。 的阻挡层是基本上由镍组成的层相对的反射器层上，和一粘结层是所述反射器层相对的阻挡层上。 已经发现，模具DASS层基本上由镍和反射器层在其上可以提供碳化硅的反射欧姆接触也可具有低欧姆损耗和/或高反射率。

    LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR
    5.
    发明公开
    LIGHT EMITTING DIODES INCLUDING BARRIER LAYERS/SUBLAYERS AND MANUFACTURING METHODS THEREFOR 审中-公开
    白细胞介素BIBRIESESCHICHTEN UND HERSTELLUNGSVEFAHREN

    公开(公告)号：EP1523776A2

    公开(公告)日：2005-04-20

    申请号：EP03765562.8

    申请日：2003-07-15

    申请人： CREE, INC.

    发明人： SLATER, JR., David, B. ,  WILLIAMS, Bradley, E. ,  ANDREWS, Peter, S. ,  EDMOND, John, A. ,  ALLEN, Scott, T. ,  BHARATHAN, Jayesh

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/38 ,  H01L2933/0016

    摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive Stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive Stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive Stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

    摘要翻译： 诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。 阻挡层设置在反射器层上并在反射器层的侧壁上延伸。 多层导电叠层还可以包括在反射器和外延区之间的欧姆层。 阻挡层进一步在欧姆层的侧壁上延伸。 阻挡层还可以延伸到多层导电叠层外的外延区域上。 阻挡层可以制成一系列交替的第一和第二子层。