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    PHOTOPATTERNABLE SILICONES FOR WAFER LEVEL Z-AXIS THERMAL INTERPOSER
    2.
    发明公开
    PHOTOPATTERNABLE SILICONES FOR WAFER LEVEL Z-AXIS THERMAL INTERPOSER 审中-公开
    用于晶圆级Z轴热插入的光敏硅

    公开(公告)号：EP3158582A1

    公开(公告)日：2017-04-26

    申请号：EP15809305.4

    申请日：2015-05-29

    申请人： Dow Corning Corporation

    发明人： JOHN, Ranjith, Samuel ,  MEYNEN, Herman ,  YEAKLE, Craig

    IPC分类号： H01L23/34 ,  H01L23/12

    CPC分类号： H01L23/3737 ,  C08G77/12 ,  C08G77/20 ,  C09D183/04 ,  C09K5/14 ,  G03F7/038 ,  G03F7/0755 ,  G03F7/0757 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/32 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/4882 ,  H01L21/78 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/3736 ,  H01L23/42 ,  H01L2924/0002 ,  H01L2924/00 ,  C08L83/00 ,  C08K5/56

    摘要： Methods for fabrication of thermal interposers, using a low stress photopatternable silicone are provided, for use in production of electronic products that feed into packaging of LEDs, logic and memory devices and other such semiconductor products where thermal management is desired. A photopatternable silicone composition, thermally conductive material and a low melting point compliant solder form a complete semiconductor package module. The photopatternable silicone is applied on a surface of a wafer and selectively radiated to form openings which provided user defined bondline thickness control. The openings are then filled with high conductivity pastes to form high conductivity thermal links. A low melting point curable solder is then applied where the solder wets the silicone as well as the thermally conductive path that leads to low thermal contact resistance between the structured z-axis thermal interposer and the heat sink and/or substrate which can be a wafer or PCB.

    摘要翻译： 提供了使用低应力光可图案化硅树脂制造热中介层的方法，用于生产电子产品，所述电子产品馈送到需要热管理的LED，逻辑和存储器装置以及其他此类半导体产品的封装中。 光图案化有机硅组合物，导热材料和低熔点柔性焊料形成完整的半导体封装模块。 将可光图案化的硅酮施加在晶片的表面上并选择性地辐射以形成提供用户限定的粘合层厚度控制的开口。 然后用高导电性浆料填充开口以形成高导电率的热连接。 然后将低熔点可固化焊料施加在焊料润湿硅树脂的地方以及导致结构化z轴热中介层与散热器和/或衬底（可以是晶片）之间的低热接触电阻的导热路径 或PCB。

    METHOD AND MATERIALS FOR REVERSE PATTERNING
    3.
    发明公开
    METHOD AND MATERIALS FOR REVERSE PATTERNING 审中-公开
    反向构图的方法和材料

    公开(公告)号：EP2456811A2

    公开(公告)日：2012-05-30

    申请号：EP10802609.7

    申请日：2010-06-22

    申请人： Dow Corning Corporation

    发明人： BRADFORD, Michael, L. ,  MOYER, Eric, Scott ,  TAKEUCHI, Kasumi ,  WANG, Sheng ,  YEAKLE, Craig

    IPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  G03F7/20 ,  G03F7/075

    CPC分类号： C08G77/18 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/0337

    摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF
    4 is used to "etch back" the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O
    2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

    摘要翻译： 将倍半硅氧烷树脂施加在图案化的光致抗蚀剂上并固化以在图案表面的顶部上产生固化的倍半硅氧烷树脂。 随后，使用包含CF 4的碱性汽提剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，从而暴露光致抗蚀剂的整个顶表面。 然后，包含O 2的第二反应离子蚀刻配方蚀刻掉光刻胶。 其结果是具有过孔的硅树脂膜，其具有图案化到光刻胶中的柱的尺寸和形状。 或者，可以将新模式传送到底层。

    WET-ETCHABLE ANTIREFLECTIVE COATINGS
    5.
    发明公开
    WET-ETCHABLE ANTIREFLECTIVE COATINGS 有权
    可湿性抗反射涂料

    公开(公告)号：EP2376584A1

    公开(公告)日：2011-10-19

    申请号：EP09832279.5

    申请日：2009-10-19

    申请人： Dow Corning Corporation

    发明人： FU, Peng-Fei ,  MOYER, Eric ,  YEAKLE, Craig

    IPC分类号： C09D183/04 ,  G03F7/11 ,  H01L21/30 ,  C09D183/06

    CPC分类号： C09D183/06 ,  C08G77/04 ,  C08G77/14 ,  G03F7/0752 ,  G03F7/091

    摘要： Antireflective coatings produced from silsesquioxane resin comprises the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m (HSiO(3-x)/2(OR′)x)n (MeSiO(3-x)/2(OR′)x)o (RSiO(3-x)/2(OR′)x)p (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group or a carboxylic acid forming group with the proviso that there is a sufficient amount of carboxylic acid groups to make the resin wet etchable after cure; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.

    摘要翻译： 由倍半硅氧烷树脂制备的抗反射涂层包括单元（Ph（CH 2）r SiO（3-x）/ 2（OR x）x）m（HSiO（3-x）/ 2（OR x）x）n（MeSiO 其中Ph是苯基，其中R 1是苯基，并且其中R 1是苯基，其中R 1是（CH 2）x（CH 2） Me是甲基; R＆素; 是氢原子或具有1至4个碳原子的烃基; R选自羧酸基团或羧酸形成基团，条件是存在足够量的羧酸基团以在固化后使树脂湿法蚀刻; 并且R1选自取代的苯基，酯基，聚醚基团; 巯基，含硫有机官能团，羟基产生基团，芳基磺酸酯基团和反应性或可固化的有机官能团; r的值为0,1,2,3或4; x的值为0,1或2; 其中树脂中m的值为0至0.90; n的值为0.05至0.99; o的值为0到0.95; p的值为0.01至0.5; q的值为0到0.5; 和m + n + o + p + q＆ap; 1。

    SILSESQUIOXANE RESINS
    7.
    发明公开
    SILSESQUIOXANE RESINS 审中-公开
    SILESQUIOXANE树脂

    公开(公告)号：EP2373722A1

    公开(公告)日：2011-10-12

    申请号：EP09832278.7

    申请日：2009-10-19

    申请人： Dow Corning Corporation

    发明人： FU, Peng-Fei ,  MOYER, Eric ,  YEAKLE, Craig

    IPC分类号： C08G77/04 ,  C09D183/04

    CPC分类号： C08G77/14 ,  C08G77/04 ,  C08G77/12 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/091

    摘要： This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin comprises the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m(HSiO(3-x)/2(OR′)x)n (MeSiO(3-x)/2(OR′)x)c, (RSiO(3-x)/2(OR′)x)p (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group, a carboxylic acid forming group, and mixtures thereof; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.

    摘要翻译： 本发明涉及可用于抗反射涂层的倍半硅氧烷树脂，其中倍半硅氧烷树脂包含单元（Ph（CH 2）r SiO（3-x）/ 2（OR x）x）m（HSiO（3-x）/ 2（OR x） （OR x）x（n-1）x（n-1）x（n-1）x（n-1） ）q其中Ph是苯基，Me是甲基; R＆素; 是氢原子或具有1至4个碳原子的烃基; R选自羧酸基团，羧酸形成基团及其混合物; 并且R1选自取代的苯基，酯基，聚醚基团; 巯基，含硫有机官能团，羟基产生基团，芳基磺酸酯基团和反应性或可固化的有机官能团; r的值为0,1,2,3或4; x的值为0,1或2; 其中树脂中m的值为0至0.90; n的值为0.05至0.99; o的值为0到0.95; p的值为0.01至0.5; q的值为0到0.5; 和m + n + o + p + q＆ap; 1。