公开(公告)号：EP1567917A2

公开(公告)日：2005-08-31

申请号：EP03790390.3

申请日：2003-12-05

申请人： E.I. DU PONT DE NEMOURS AND COMPANY

发明人： ROACH, David, Herbert ,  KIM, Young, H. ,  CHENG, Lap-Tak, Andrew

IPC分类号： G03F7/004

CPC分类号： G03F7/0392 ,  G03F7/0047 ,  G03F7/023

摘要： This invention provides compositions that can be used as positive imageable photoresists. These compositions include positive imageable photopolymer systems and particulate materials. These compositions can be used in thick film and other processes to make films and patterned structures that are useful in producing electronic devices.

公开(公告)号：EP1322686A2

公开(公告)日：2003-07-02

申请号：EP01971217.3

申请日：2001-09-19

申请人： E.I. DU PONT DE NEMOURS AND COMPANY

发明人： ROACH, David, Herbert

IPC分类号： C08G18/08 ,  B29B17/00 ,  C08J11/06

CPC分类号： B29B17/0404 ,  B29B2017/046 ,  B29K2075/00 ,  C08G18/0895 ,  C08J11/06 ,  C08J2375/04 ,  Y02W30/625 ,  Y02W30/701 ,  Y10T428/2982

摘要： Polyurethaneurea powders, prepared from spandex under specific process conditions, are provided.

公开(公告)号：EP1390319A1

公开(公告)日：2004-02-25

申请号：EP02746493.2

申请日：2002-05-14

申请人： E.I. DU PONT DE NEMOURS AND COMPANY

发明人： BOUCHARD, Robert, Joseph ,  CHENG, Lap-Tak, Andrew ,  HANG, Kenneth, Warren ,  ROACH, David, Herbert

IPC分类号： C04B35/453 ,  H01B3/12

CPC分类号： H01B3/12 ,  C03C8/04 ,  C03C8/14 ,  C03C17/008 ,  C03C17/25 ,  C03C2217/23 ,  C04B35/453 ,  C04B35/6264 ,  C04B35/63 ,  C04B35/632 ,  C04B2235/3201 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/327 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3289 ,  C04B2235/3293 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/3409 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/96 ,  C04B2235/9661 ,  H01B3/004 ,  H01B3/185 ,  H01C17/06533 ,  H01G4/1209 ,  H01J3/40 ,  H01J2229/882 ,  H01J2329/4691 ,  H01J2329/8615

摘要： This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450°C to about 550°C and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450°C to about 550°C and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.