公开(公告)号：EP0196245A1

公开(公告)日：1986-10-01

申请号：EP86400366.0

申请日：1986-02-21

申请人： FUJITSU LIMITED

发明人： Sasa, Shigehiko ,  Kondo, Kazuhiro ,  Muto, Shunichi

IPC分类号： H01L29/207 ,  H01L29/36 ,  H01L21/203

CPC分类号： H01L29/7787 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/207 ,  H01L29/365

摘要： A compound semiconductor layer (GaAs or AlGaAs layer) is grown by an MBE process and is doped by forming dopant (Si or Be) atomic planes. In order to obtain a high carrier (electron or hole) concentration of the layer, atomic plane doping at a sheet dopant concentration of 2 x 10 12 cm -2 or more is repeated at constant intervals of atomic planes of 6 nm or less.

摘要翻译： 通过MBE工艺生长化合物半导体层（GaAs或AlGaAs层），并通过形成掺杂剂（Si或Be）原子面进行掺杂。 为了获得该层的高载流子（电子或空穴）浓度，以恒定的间隔重复在2×10 -2 cm -2以上的片状掺杂剂浓度下的原子平面掺杂 原子面为6nm以下。

公开(公告)号：EP0357248A1

公开(公告)日：1990-03-07

申请号：EP89307963.2

申请日：1989-08-04

申请人： FUJITSU LIMITED

发明人： Arimoto, Hiroshi ,  Muto, Shunichi ,  Sasa, Shigehiko ,  Okada, Makoto ,  Yokoyama, Naoki

IPC分类号： H01L29/08 ,  H01L29/66

CPC分类号： B82Y10/00 ,  H01L29/66977

摘要： A semiconductor device of the quantum interference type has channel means (4,6;55) for passing carriers from a source region (31;36;52) to a drain region (33;56) of the device, at least part of the said channel means (4,6;55) comprising two conductive paths extending in parallel between the source and drain regions (31;36;52/32;56), and field control means (35;59) arranged for subjecting the said conductive paths to a selectively variable electric or magnetic field so as to control the passage of carriers through the said channel means (4,6;55). The device is provided with carrier-energy filtering means (40;53) arranged for restricting the energy levels, of carriers entering the said channel means (4,6;55), to a predetermined narrow band of energy levels. In this way quantum interference in the device can be improved as compared with a known semiconductor device of the quantum interference type.

摘要翻译： 量子干涉型半导体器件具有用于将载流子从源极区域（31; 36; 52）传送到器件的漏极区域（33; 56）的通道装置（4,6; 55），至少部分 所述通道装置（4,6; 55）包括在源极和漏极区域（31; 36; 52/32; 56）之间并联延伸的两个导电路径;以及场控制装置（35; 59） 路径到选择性可变的电场或磁场，以便控制载流子通过所述通道装置（4,6; 55）的通道。 设备设置有载波能量滤波装置（40; 53），其布置成将进入所述信道装置（4,6; 55）的载波的能级限制到预定的窄带能级。 与已知的量子干涉型半导体器件相比，可以提高器件中的量子干涉。

公开(公告)号：EP0155215A3

公开(公告)日：1986-02-19

申请号：EP85400448

申请日：1985-03-08

申请人： FUJITSU LIMITED

发明人： Inata, Tsuguo ,  Sasa, Shigehiko

IPC分类号： H01L29/80 ,  H01L29/36

CPC分类号： H01L29/7787

摘要： In order to manufacture an IC comprising high electron mobility semiconductor devices, it is necessary to make the carriers in channel layer not to loose their high mobility by thermal treatment during the IC fabrication process. It has been found that the mobility of the two dimensional electron gas (2DEG) is lost by scattering of ionized impurity diffused from doped layer into spacer layer which separates the 2DEG in channel layer from the doped layer. A multilayered structure is proposed including a channel layer (12) made of i-GaAs and formed on a high resistivity GaAs substrate (11), a first spacer layer (13) of undoped Al x Ga 1-x As, a second spacer layer (14) of i-GaAs and a doped layer of n-Al x Ga 1 - x As. The thickness of the second spacer layer (14) is approximately 2 x 10- 9 m, and that of the first spacer is approximately 4x 10 -9 m. A high electron mobility transistor, having such a structure could withstand a heat treatment at 750° C for 10 min. and at more than 950° C for 10 sec. for annealing, the second spacer (14) preventing the diffusion of impurity.

公开(公告)号：EP0381591A2

公开(公告)日：1990-08-08

申请号：EP90400299.5

申请日：1990-02-02

申请人： FUJITSU LIMITED

发明人： Yokoyama, Naoki ,  Okada, Makoto ,  Sasa, Shigehiko ,  Arimoto, Hiroshi

IPC分类号： H01L29/10 ,  H01L29/812 ,  H01L29/82 ,  H01L29/06 ,  H01L29/205 ,  H01L29/60

CPC分类号： B82Y10/00 ,  G06F7/388 ,  H01L29/66977 ,  H01L29/82 ,  H03K19/08

摘要： A quantum interference semiconductor device for producing an output in response to interference of electron waves comprises a source region (214) for injecting electrons, a drain region (216) for collecting electrons, a passage (217) for flowing the injected electrons from the source region to the drain region, a passage dividing structure (218, 220, 222) provided in the passage for dividing the passage into a first region in contact with the source region and a second region in contact with the drain region by inducing depletion regions in the passage so as to prohibit the electrons flowing through the passage, the passage dividing structure having a longitudinal size approximately equal to or smaller than the inelastic and elastic scattering length of electrons and constructed such that a plurality of spot-like channel regions (224, 226) are provided in the passage dividing structure for passing the electrons from the first region to the second region in a form of electron waves with respective phase shifts, each of the plurality of spot-like channel regions having a lateral width confined approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, and a control structure (218, 220) for controlling the phase of electron waves passing through at least one of the plurality of spot-like channel regions.

摘要翻译： 用于响应于电子波干涉而产生输出的量子干涉半导体器件包括用于注入电子的源极区域（214），用于收集电子的漏极区域（216），用于使来自源极的注入的电子流动的通道（217） 设置在所述通道中的通道分隔结构（218,220,222），用于将所述通道分隔成与所述源极区域接触的第一区域;以及通过引入所述漏极区域与所述漏极区域接触的第二区域 所述通道禁止电子流过所述通道，所述通道分隔结构具有大致等于或小于电子的非弹性和弹性散射长度的纵向尺寸，并且构造成使得多个点状通道区域（224， 226）设置在用于使电子以电子波的形式从第一区域传递到第二区域的通道分隔结构中 多个点状沟道区域中的每一个具有约等于或小于通过其的电子的德布罗意波长的横向宽度，以及用于控制电子相位的控制结构（218,220） 波通过多个点样通道区域中的至少一个。

公开(公告)号：EP0199435A3

公开(公告)日：1988-03-02

申请号：EP86301407

申请日：1986-02-27

申请人： FUJITSU LIMITED

发明人： Ishikawa, Tomonori ,  Sasa, Shigehiko ,  Hiyamizu, Satoshi

IPC分类号： H01L29/80 ,  H01L29/205 ,  H01L29/36

CPC分类号： H01L29/7787 ,  H01L29/205 ,  H01L29/365

摘要： A field effect semiconductor device which utilizes a two-dimensional electron gas is composed of a semi-insulating substrate (1 an i-type active layer (2); a superlattice structure layer which comprises a first i-type thin layer (3A), a thin layer (3B) doped with dopant by an atomic plane doping process, and a second i-type thin layer (3C), these thin layers forming a quantum well; generally an n-type layer; and electrodes (6, 7, 8) for source, drain, and gate.

公开(公告)号：EP0199435A2

公开(公告)日：1986-10-29

申请号：EP86301407.2

申请日：1986-02-27

申请人： FUJITSU LIMITED

发明人： Ishikawa, Tomonori ,  Sasa, Shigehiko ,  Hiyamizu, Satoshi

IPC分类号： H01L29/80 ,  H01L29/205 ,  H01L29/36

CPC分类号： H01L29/7787 ,  H01L29/205 ,  H01L29/365

摘要： A field effect semiconductor device which utilizes a two-dimensional electron gas is composed of a semi-insulating substrate (1 an i-type active layer (2); a superlattice structure layer which comprises a first i-type thin layer (3A), a thin layer (3B) doped with dopant by an atomic plane doping process, and a second i-type thin layer (3C), these thin layers forming a quantum well; generally an n-type layer; and electrodes (6, 7, 8) for source, drain, and gate.

公开(公告)号：EP0155215A2

公开(公告)日：1985-09-18

申请号：EP85400448.8

申请日：1985-03-08

申请人： FUJITSU LIMITED

发明人： Inata, Tsuguo ,  Sasa, Shigehiko

IPC分类号： H01L29/80 ,  H01L29/36

CPC分类号： H01L29/7787

摘要： In order to manufacture an IC comprising high electron mobility semiconductor devices, it is necessary to make the carriers in channel layer not to loose their high mobility by thermal treatment during the IC fabrication process. It has been found that the mobility of the two dimensional electron gas (2DEG) is lost by scattering of ionized impurity diffused from doped layer into spacer layer which separates the 2DEG in channel layer from the doped layer. A multilayered structure is proposed including a channel layer (12) made of i-GaAs and formed on a high resistivity GaAs substrate (11), a first spacer layer (13) of undoped Al x Ga 1-x As, a second spacer layer (14) of i-GaAs and a doped layer of n-Al x Ga 1 - x As. The thickness of the second spacer layer (14) is approximately 2 x 10- 9 m, and that of the first spacer is approximately 4x 10 -9 m. A high electron mobility transistor, having such a structure could withstand a heat treatment at 750° C for 10 min. and at more than 950° C for 10 sec. for annealing, the second spacer (14) preventing the diffusion of impurity.

公开(公告)号：EP0357248B1

公开(公告)日：1995-03-01

申请号：EP89307963.2

申请日：1989-08-04

申请人： FUJITSU LIMITED

发明人： Arimoto, Hiroshi ,  Muto, Shunichi ,  Sasa, Shigehiko ,  Okada, Makoto ,  Yokoyama, Naoki

IPC分类号： H01L29/08 ,  H01L29/66

CPC分类号： B82Y10/00 ,  H01L29/66977

公开(公告)号：EP0199435B1

公开(公告)日：1991-11-13

申请号：EP86301407.2

申请日：1986-02-27

申请人： FUJITSU LIMITED

发明人： Ishikawa, Tomonori ,  Sasa, Shigehiko ,  Hiyamizu, Satoshi

IPC分类号： H01L29/80 ,  H01L29/205 ,  H01L29/36

CPC分类号： H01L29/7787 ,  H01L29/205 ,  H01L29/365

公开(公告)号：EP0381591A3

公开(公告)日：1991-09-04

申请号：EP90400299.5

申请日：1990-02-02

申请人： FUJITSU LIMITED

发明人： Yokoyama, Naoki ,  Okada, Makoto ,  Sasa, Shigehiko ,  Arimoto, Hiroshi

IPC分类号： H01L29/10 ,  H01L29/812 ,  H01L29/82 ,  H01L29/06 ,  H01L29/205 ,  H01L29/60

CPC分类号： B82Y10/00 ,  G06F7/388 ,  H01L29/66977 ,  H01L29/82 ,  H03K19/08

摘要： A quantum interference semiconductor device for producing an output in response to interference of electron waves comprises a source region (214) for injecting electrons, a drain region (216) for collecting electrons, a passage (217) for flowing the injected electrons from the source region to the drain region, a passage dividing structure (218, 220, 222) provided in the passage for dividing the passage into a first region in contact with the source region and a second region in contact with the drain region by inducing depletion regions in the passage so as to prohibit the electrons flowing through the passage, the passage dividing structure having a longitudinal size approximately equal to or smaller than the inelastic and elastic scattering length of electrons and constructed such that a plurality of spot-like channel regions (224, 226) are provided in the passage dividing structure for passing the electrons from the first region to the second region in a form of electron waves with respective phase shifts, each of the plurality of spot-like channel regions having a lateral width confined approximately equal to or smaller than the de Broglie wavelength of the electrons passing therethrough, and a control structure (218, 220) for controlling the phase of electron waves passing through at least one of the plurality of spot-like channel regions.