Semiconductor memory device having means for replacing defective memory cells
    1.
    发明公开
    Semiconductor memory device having means for replacing defective memory cells 失效
    一种半导体存储器,包括装置,用于替换有缺陷的存储单元。

    公开(公告)号:EP0383452A2

    公开(公告)日:1990-08-22

    申请号:EP90300935.5

    申请日:1990-01-30

    摘要: A semiconductor memory device comprises a first memory (16, 70, 201-208, 321, 420, 501) comprising memory cells for prestoring fixed data, a decoder (14, 15, 71, 72, 209-216, 225-228, 302, 305, 505, 506) for decoding an input address and for reading out a fixed data from the first memory based on a decoded input address, a second memory (23, 82, 235, 322, 331, 411, 502, 503) for storing a data identical to that prestored in a defective memory cell of the first memory, where the second memory comprising programmable non-volatile memory cells, a discriminating part (13, 75, 76, 96, 308, 309, 426, 522, 523, 531) including a third memory (63, 64, 73, 74, 93, 94, 95, 307, 423, 504) for storing a redundant address of each defective memory cell of the first memory for discriminating whether or not the input address coincides with the redundant address and for outputting a discrimination signal when the input address coincides with the redundant address, and a selecting part (25, 80, 305, 309, 426, 506) supplied with data read out from the first and second memories for normally outputting the data read out from the first memory and selectively outputting the data from the second memory when the discrimination signal is received from the discriminating part.

    摘要翻译: 一种半导体存储器件包括包含用于的Presto环固定数据存储器单元的第一存储器(16,70,201-208,321,420,501),解码器(14,15,71,72,209-216,225-228, 302,305,505,506),用于输入地址的解码和用于从基于经解码的输入地址,第二存储器(23,82,235,322,331,411,502,503中的第一存储器中读出的固定数据 ),用于存储与在所述第一存储器中,有缺陷的存储单元并预先存储一个数据,其中所述第二存储器包括可编程非易失性存储器单元,判别部(13,75,76,96,308,309,426,522 ,523,531)包括用于识别存储在第一存储器中的每个有缺陷的存储单元的冗余地址的第三存储器(63,64,73,74,93,94,95,307,423,504)是否将 输入地址与所述冗余地址和用于输出铃声当输入地址与所述冗余地址,和一个选择部分(25,80,305,309重合一致的识别信号, 426,506)提供数据从所述第一存储器和第二存储器中读出用于正常地输出婷将数据从第一存储器和选择性地输出婷从第二存储器当从判别部所接收的识别信号中读出的数据。

    Semiconductor memory device having means for replacing defective memory cells
    3.
    发明公开
    Semiconductor memory device having means for replacing defective memory cells 失效
    具有用于替换有缺陷的记忆细胞的手段的半导体存储器件

    公开(公告)号:EP0383452A3

    公开(公告)日:1992-12-23

    申请号:EP90300935.5

    申请日:1990-01-30

    摘要: A semiconductor memory device comprises a first memory (16, 70, 201-208, 321, 420, 501) comprising memory cells for prestoring fixed data, a decoder (14, 15, 71, 72, 209-216, 225-228, 302, 305, 505, 506) for decoding an input address and for reading out a fixed data from the first memory based on a decoded input address, a second memory (23, 82, 235, 322, 331, 411, 502, 503) for storing a data identical to that prestored in a defective memory cell of the first memory, where the second memory comprising programmable non-volatile memory cells, a discriminating part (13, 75, 76, 96, 308, 309, 426, 522, 523, 531) including a third memory (63, 64, 73, 74, 93, 94, 95, 307, 423, 504) for storing a redundant address of each defective memory cell of the first memory for discriminating whether or not the input address coincides with the redundant address and for outputting a discrimination signal when the input address coincides with the redundant address, and a selecting part (25, 80, 305, 309, 426, 506) supplied with data read out from the first and second memories for normally outputting the data read out from the first memory and selectively outputting the data from the second memory when the discrimination signal is received from the discriminating part.