公开(公告)号：EP3098615A1

公开(公告)日：2016-11-30

申请号：EP16169119.1

申请日：2016-05-11

申请人： Freescale Semiconductor, Inc.

发明人： Holm, Paige ,  Liu, Lianjun

IPC分类号： G01R33/09 ,  G01R33/00

CPC分类号： G01R33/0023 ,  G01R33/0011 ,  G01R33/0017 ,  G01R33/0035 ,  G01R33/09

摘要： A sensor package includes a magnetic field sensor and a corruption detection and reset subsystem. The magnetic field sensor has a magnetic sense element and a ferromagnetic structure characterized by a baseline magnetic state. The subsystem includes a detector element, a processor, and current carrying structure positioned in proximity to the ferromagnetic structure. Methodology performed by the subsystem entails detecting at the detector element an altered magnetic state of the ferromagnetic structure, where the altered magnetic state differs from the baseline magnetic state. Methodology further entails determining, at the processor, when a reset action is needed in response to the altered magnetic state and applying a reset magnetic field to the ferromagnetic structure to reset the ferromagnetic structure from the altered magnetic state to the baseline magnetic state.

摘要翻译： 传感器封装包括磁场传感器和损坏检测和复位子系统。 磁场传感器具有磁感应元件和以基线磁状态为特征的铁磁结构。 子系统包括位于铁磁结构附近的检测器元件，处理器和载流结构。 由子系统执行的方法需要在检测器元件处检测铁磁结构的改变的磁状态，其中改变的磁状态与基线磁状态不同。 方法还需要在处理器处确定响应于改变的磁状态需要复位动作并将复位磁场施加到铁磁结构以将铁磁结构从改变的磁状态重新设置到基线磁状态。

公开(公告)号：EP3070486A1

公开(公告)日：2016-09-21

申请号：EP16160536.5

申请日：2016-03-15

申请人： Freescale Semiconductor, Inc.

发明人： Lance, Philippe ,  Liu, Lianjun

IPC分类号： G01R31/28 ,  G01R31/3187 ,  G01R31/319

CPC分类号： G11C29/12 ,  G01R31/2884 ,  G01R31/31724 ,  G01R31/3187 ,  G01R31/31905 ,  G01R31/31908 ,  G01R33/07 ,  G01R33/072 ,  G11C11/18

摘要： A system for programming integrated circuit (IC) dies formed on a wafer includes a magnetic field transmitter that outputs a digital test program as a magnetic signal. At least one digital magnetic sensor (e.g., Hall effect sensor) is formed with the IC dies on the wafer. The digital magnetic sensor detects and receives the magnetic signal. A processor formed on the wafer converts the magnetic signal to the digital test program and the digital test program is stored in memory on the wafer in association with one of the IC dies. The magnetic field transmitter does not physically contact the dies, but can flood an entire surface of the wafer with the magnetic signal so that all of the IC dies are concurrently programmed with the digital test program.

摘要翻译： 用于在晶片上形成的集成电路（IC）芯片的编程系统包括输出数字测试程序作为磁信号的磁场发射器。 至少一个数字磁传感器（例如霍尔效应传感器）形成在晶片上的IC管芯上。 数字磁传感器检测并接收磁信号。 形成在晶片上的处理器将磁信号转换为数字测试程序，数字测试程序与IC芯片之一相关联地存储在晶片上的存储器中。 磁场发射器不物理地接触模具，而是可以用磁信号使晶片的整个表面发生泛波，使得所有的IC芯片都与数字测试程序同时编程。

公开(公告)号：EP2860532A1

公开(公告)日：2015-04-15

申请号：EP14187546.8

申请日：2014-10-02

申请人： Freescale Semiconductor, Inc.

发明人： Liu, Lianjun ,  Bates, James S. ,  Chowdhury, Mamur ,  Monk, David J. ,  Taheri, Babak A.

IPC分类号： G01P15/125 ,  G01C19/5783 ,  G01L1/14

CPC分类号： B81B3/0021 ,  B81B7/0006 ,  B81C1/00158 ,  B81C1/00198 ,  G01C19/5783 ,  G01L1/142 ,  G01L1/246 ,  G01L9/0073 ,  G01P15/125

摘要： A device (20) includes sensors (30, 32, 34) that sense different physical stimuli. Fabrication (90) entails forming (92) a device structure (22) to include the sensors and coupling (150) a cap structure (24) with the device structure so that the sensors are interposed between the cap structure and a substrate layer (28) of the device structure. Fabrication (90) further entails forming ports (38, 40) in the substrate layer (28) such that one port (38) exposes a sense element (44) of the sensor (30) to an external environment (72), and another port (40) temporarily exposes the sensor (34) to the external environment. A seal structure (26) is attached to the substrate layer (28) such that one port (40) is hermetically sealed by the seal structure and an external port (46) of the seal structure is aligned with the port (38).

摘要翻译： 装置（20）包括感测不同物理刺激的传感器（30,32,34）。 制造（90）需要形成（92）装置结构（22）以包括传感器和联接（150）具有装置结构的盖结构（24），使得传感器插入在盖结构和基底层之间（28 ）的设备结构。 制造（90）还需要在基底层（28）中形成端口（38,40），使得一个端口（38）将传感器（30）的感测元件（44）暴露于外部环境（72），另一个 端口（40）临时将传感器（34）暴露于外部环境。 密封结构（26）附接到基底层（28），使得一个端口（40）被密封结构气密密封，并且密封结构的外部端口（46）与端口（38）对齐。

公开(公告)号：EP2860532B1

公开(公告)日：2016-09-21

申请号：EP14187546.8

申请日：2014-10-02

申请人： Freescale Semiconductor, Inc.

发明人： Liu, Lianjun ,  Bates, James S. ,  Chowdhury, Mamur ,  Monk, David J. ,  Taheri, Babak A.

IPC分类号： G01P15/125 ,  G01C19/5783 ,  G01L1/14

CPC分类号： B81B3/0021 ,  B81B7/0006 ,  B81C1/00158 ,  B81C1/00198 ,  G01C19/5783 ,  G01L1/142 ,  G01L1/246 ,  G01L9/0073 ,  G01P15/125

公开(公告)号：EP2476644A3

公开(公告)日：2014-01-22

申请号：EP11184861.0

申请日：2011-10-12

申请人： Freescale Semiconductor, Inc.

发明人： Karlin, Lisa H ,  Kierst, David W. ,  Liu, Lianjun ,  Liu, Wie ,  Montez, Ruben B. ,  Steimle, Robert F.

IPC分类号： B81C1/00

CPC分类号： B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

摘要： A method of forming a MEMS device (10) includes forming a sacrificial layer (34) over a substrate (12). The method further includes forming a metal layer (42) over the sacrificial layer (34) and forming a protection layer (44) overlying the metal layer (42). The method further includes etching the protection layer (44) and the metal layer (42) to form a structure (56) having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer (34) to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer (34) to form the movable portion of the MEMS device (10).

公开(公告)号：EP2476644A2

公开(公告)日：2012-07-18

申请号：EP11184861.0

申请日：2011-10-12

申请人： Freescale Semiconductor, Inc.

发明人： Karlin, Lisa H ,  Kierst, David W. ,  Liu, Lianjun ,  Liu, Wie ,  Montez, Ruben B. ,  Steimle, Robert F.

IPC分类号： B81C1/00

CPC分类号： B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

摘要： A method of forming a MEMS device (10) includes forming a sacrificial layer (34) over a substrate (12). The method further includes forming a metal layer (42) over the sacrificial layer (34) and forming a protection layer (44) overlying the metal layer (42). The method further includes etching the protection layer (44) and the metal layer (42) to form a structure (56) having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer (34) to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer (34) to form the movable portion of the MEMS device (10).

摘要翻译： 形成MEMS器件（10）的方法包括在衬底（12）上形成牺牲层（34）。 该方法还包括在牺牲层（34）上方形成金属层（42），并形成覆盖在金属层（42）上的保护层（44）。 该方法还包括蚀刻保护层（44）和金属层（42）以形成在金属层的剩余部分上形成保护层的剩余部分的结构（56）。 该方法还包括蚀刻牺牲层（34）以形成MEMS器件的可移动部分，其中保护层的剩余部分在蚀刻牺牲层（34）期间保护金属层的剩余部分，以形成 MEMS器件（10）的可移动部分。