公开(公告)号：EP2746217A1

公开(公告)日：2014-06-25

申请号：EP13196313.4

申请日：2013-12-09

申请人： Freescale Semiconductor, Inc.

发明人： Montez, Ruben B. ,  Steimle, Robert F.

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

摘要： A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film (510, 520) is deposited between one or more polysilicon layer (210, 230) in a MEMS device and the TEOS-based silicon oxide layer (220). This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.

摘要翻译： 提供了一种用于通过减少在制造期间可以积聚在多晶硅表面上的来自TEOS的氧化硅膜的碳的量来降低MEMS器件中的静电的机制。 在MEMS器件中的一个或多个多晶硅层（210,230）和基于TEOS的氧化硅层（220）之间沉积碳阻挡材料膜（510,520）。 该阻挡材料阻止碳扩散到多晶硅中，从而减少碳在多晶硅表面上的积累。 通过减少碳的积累，由于碳的存在而导致的静电机会同样地减少。

公开(公告)号：EP2746217B1

公开(公告)日：2016-10-12

申请号：EP13196313.4

申请日：2013-12-09

申请人： Freescale Semiconductor, Inc.

发明人： Montez, Ruben B. ,  Steimle, Robert F.

IPC分类号： B81C1/00

CPC分类号： B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

公开(公告)号：EP2476644A3

公开(公告)日：2014-01-22

申请号：EP11184861.0

申请日：2011-10-12

申请人： Freescale Semiconductor, Inc.

发明人： Karlin, Lisa H ,  Kierst, David W. ,  Liu, Lianjun ,  Liu, Wie ,  Montez, Ruben B. ,  Steimle, Robert F.

IPC分类号： B81C1/00

CPC分类号： B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

摘要： A method of forming a MEMS device (10) includes forming a sacrificial layer (34) over a substrate (12). The method further includes forming a metal layer (42) over the sacrificial layer (34) and forming a protection layer (44) overlying the metal layer (42). The method further includes etching the protection layer (44) and the metal layer (42) to form a structure (56) having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer (34) to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer (34) to form the movable portion of the MEMS device (10).

公开(公告)号：EP2476644A2

公开(公告)日：2012-07-18

申请号：EP11184861.0

申请日：2011-10-12

申请人： Freescale Semiconductor, Inc.

发明人： Karlin, Lisa H ,  Kierst, David W. ,  Liu, Lianjun ,  Liu, Wie ,  Montez, Ruben B. ,  Steimle, Robert F.

IPC分类号： B81C1/00

CPC分类号： B81C1/00801 ,  B81B2207/07 ,  B81C2201/053

摘要： A method of forming a MEMS device (10) includes forming a sacrificial layer (34) over a substrate (12). The method further includes forming a metal layer (42) over the sacrificial layer (34) and forming a protection layer (44) overlying the metal layer (42). The method further includes etching the protection layer (44) and the metal layer (42) to form a structure (56) having a remaining portion of the protection layer formed over a remaining portion of the metal layer. The method further includes etching the sacrificial layer (34) to form a movable portion of the MEMS device, wherein the remaining portion of the protection layer protects the remaining portion of the metal layer during the etching of the sacrificial layer (34) to form the movable portion of the MEMS device (10).

摘要翻译： 形成MEMS器件（10）的方法包括在衬底（12）上形成牺牲层（34）。 该方法还包括在牺牲层（34）上方形成金属层（42），并形成覆盖在金属层（42）上的保护层（44）。 该方法还包括蚀刻保护层（44）和金属层（42）以形成在金属层的剩余部分上形成保护层的剩余部分的结构（56）。 该方法还包括蚀刻牺牲层（34）以形成MEMS器件的可移动部分，其中保护层的剩余部分在蚀刻牺牲层（34）期间保护金属层的剩余部分，以形成 MEMS器件（10）的可移动部分。

公开(公告)号：EP2746218B1

公开(公告)日：2016-09-28

申请号：EP13196317.5

申请日：2013-12-09

申请人： Freescale Semiconductor, Inc.

发明人： Steimle, Robert F. ,  Montez, Ruben B.

IPC分类号： B81B3/00

CPC分类号： B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

摘要： A method for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters (520). When a next portion of the MEMS device is formed on the sacrificial layer (810), this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface (910) decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

公开(公告)号：EP2746218A1

公开(公告)日：2014-06-25

申请号：EP13196317.5

申请日：2013-12-09

申请人： Freescale Semiconductor, Inc.

发明人： Steimle, Robert F. ,  Montez, Ruben B.

IPC分类号： B81B3/00

CPC分类号： B81B3/001 ,  B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0096 ,  B81C2201/115 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

摘要： A method for reducing stiction in a MEMS device by decreasing surface area between two surfaces that can come into close contact is provided. Reduction in contact surface area is achieved by increasing surface roughness of one or both of the surfaces. The increased roughness is provided by forming a micro-masking layer on a sacrificial layer used in formation of the MEMS device, and then etching the surface of the sacrificial layer. The micro-masking layer can be formed using nanoclusters (520). When a next portion of the MEMS device is formed on the sacrificial layer (810), this portion will take on the roughness characteristics imparted on the sacrificial layer by the etch process. The rougher surface (910) decreases the surface area available for contact in the MEMS device and, in turn, decreases the area through which stiction can be imparted.

摘要翻译： 提供了一种通过减少可以紧密接触的两个表面之间的表面积来减小MEMS器件中的静摩擦的方法。 通过增加一个或两个表面的表面粗糙度来实现接触表面积的减小。 通过在用于形成MEMS器件的牺牲层上形成微掩模层，然后蚀刻牺牲层的表面来提供增加的粗糙度。 微掩模层可以使用纳米簇（520）形成。 当MEMS器件的下一部分形成在牺牲层（810）上时，该部分将通过蚀刻工艺承受赋予牺牲层的粗糙度特性。 较粗糙表面（910）减小了可用于在MEMS装置中接触的表面积，并且进而降低了可赋予粘性的面积。