公开(公告)号：EP1680817A1

公开(公告)日：2006-07-19

申请号：EP04796085.1

申请日：2004-10-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  CAO, Xian-An ,  ZHANG, Anping ,  LEBOEUF, Steven, Francis ,  HONG, Huicong ,  PARK, Dong-Sil ,  NARANG, Kristi, Jean

IPC分类号： H01L33/00 ,  C30B29/40

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106'). Said growing includes applying a temporally varying thermal gradient (100, 100', 102, 102') between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106'), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

公开(公告)号：EP1594603A1

公开(公告)日：2005-11-16

申请号：EP03711005.3

申请日：2003-02-12

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  NARANG, Kristi, Jean ,  GIDDINGS, Robert, Arthur ,  TYSOE, Steven, Alfred ,  LUCEK, John, William ,  VAGARALI, Suresh, Shankarappa ,  LEONELLI, Robert, Vincent, Jr. ,  DYSART, Joel, Rice

IPC分类号： B01J3/06 ,  B01J3/04 ,  B01J3/03

CPC分类号： B01J3/008 ,  B01J3/062 ,  B01J19/02 ,  B01J2203/0665 ,  B01J2219/00777 ,  B01J2219/0236 ,  B01J2219/024 ,  C30B7/10 ,  C30B9/00 ,  C30B29/40 ,  C30B29/406 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1024 ,  Y10T117/108 ,  Y10T117/1092

摘要： A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550°C and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550°C and about 1500°C. The invention also includes methods of filling the capsule with the solvent and sealing the capsule, as well as an apparatus for sealing the capsule.

公开(公告)号：EP1490537A1

公开(公告)日：2004-12-29

申请号：EP03709199.8

申请日：2003-02-21

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  WEBB, Steven, William ,  VAGARALI, Suresh, Shankarappa ,  KADIOGLU, Yavuz ,  PARK,Dong-Sil ,  CHEN, Zheng

IPC分类号： C30B9/00 ,  C30B29/40

CPC分类号： C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

摘要： A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

公开(公告)号：EP2162390A2

公开(公告)日：2010-03-17

申请号：EP08755914.2

申请日：2008-05-20

申请人： General Electric Company

发明人： MCNULTY, Thomas, Francis ,  LEMAN, John, Thomas ,  LOU, Victor, Lienkong ,  MENDICINO, Frank, Dominic ,  SHUBA, Roman ,  D'EVELYN, Mark, Philip ,  LEWIS, Larry, Neil ,  HEINRICH VAN DONGEREN, Johan ,  MENDICINO, Frank, Dominic

IPC分类号： C01B33/021 ,  H01L31/02

CPC分类号： C01B33/025 ,  C01B33/023 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.

公开(公告)号：EP1680817B1

公开(公告)日：2012-08-01

申请号：EP04796085.1

申请日：2004-10-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  CAO, Xian-An ,  ZHANG, Anping ,  LEBOEUF, Steven, Francis ,  HONG, Huicong ,  PARK, Dong-Sil ,  NARANG, Kristi, Jean

IPC分类号： C30B29/40 ,  C30B9/00 ,  H01L33/00 ,  H01L33/10

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106'). Said growing includes applying a temporally varying thermal gradient (100, 100', 102, 102') between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106'), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

公开(公告)号：EP2162391A1

公开(公告)日：2010-03-17

申请号：EP08755916.7

申请日：2008-05-20

申请人： General Electric Company

发明人： MCNULTY, Thomas, Francis ,  LEMAN, John, Thomas ,  LEWIS, Larry, Neil ,  D'EVELYN, Mark, Philip ,  LOU, Victor, Lienkong ,  SHUBA, Roman

IPC分类号： C01B33/025

CPC分类号： C01B33/025

摘要： A process for the manufacture of high-purity elemental silicon is described. The process includes the step of preparing a silica gel composition by reacting at least one organosilane compound with an aqueous composition, so as to form granules of the silica gel. A hydrocarbon species is then decomposed by way of a hydrocarbon cracking reaction in the presence of the silica gel composition, so that carbon resulting from the decomposition of the hydrocarbon species is deposited on the granules of the gel composition. Heating of the carbon-containing silica gel composition to an elevated temperature produces the elemental silicon product. Related methods for making photovoltaic cells, using the elemental silicon, are also described.

公开(公告)号：EP1476249B1

公开(公告)日：2006-08-30

申请号：EP02789868.3

申请日：2002-11-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  NARANG, Kristi, jean ,  GIDDINGS, Robert, Arthur ,  LEONELLI, Robert, Vincent, Jr. ,  DOLE, Stephan, Lee

IPC分类号： B01J3/00 ,  B01J3/04 ,  B01J3/06 ,  B01J19/00 ,  B01J19/02

CPC分类号： B01J19/006 ,  B01J3/062 ,  B01J19/0013 ,  B01J19/0073 ,  B01J19/02 ,  B01J2203/067 ,  B01J2219/00063 ,  B01J2219/00094 ,  B01J2219/00135 ,  B01J2219/0236 ,  B01J2219/0277 ,  B01J2219/1943 ,  C30B7/00

摘要： A pressure vessel (10) for processing at least one material in a supercritical fluid. The pressure vessel (10) includes a self-pressurizing capsule (12) for containing at least one material and the supercritical fluid in a substantially air-free environment, a pressure transmission medium (14) surrounding the capsule (12) for maintaining an outer pressure on the capsule (12), at least one heating element (18) insertable in the pressure transmission medium (14) such that the heating element (18) surrounds the capsule (12), a temperature measurement means for measuring a temperature of the capsule (12), a temperature controller (22) for controlling the temperature and providing power to the heating element (18), a restraint (24) to contain and hold in place the capsule (12), the pressure transmission medium (14), and the heating element (18), and at least one seal (120, 122) between the restraint (24) and the pressure transmission medium (14). Methods of using the pressure vessel (10), processing a material at high temperature and high pressure in the presence of a supercritical fluid within the capsule (12) are also described.

公开(公告)号：EP1579486A1

公开(公告)日：2005-09-28

申请号：EP03800171.5

申请日：2003-12-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  PARK, Dong-Sil ,  LEBOEUF, Steven, Francis ,  ROWLAND, Larry, Burton ,  NARANG, Kristi, Jean ,  HONG, Huicong ,  SANDVIK, Peter, Micah

IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/20 ,  C30B29/40 ,  C30B9/12

CPC分类号： H01L33/32 ,  C30B7/105 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/2003 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/7787

摘要： A device which includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 104 per cm2, substantially no tilt boundaries, and an oxygen impurity level of less than 1019 cm-3. The electronic device may be in the form of lighting applications such as light emitting diode (LED) and laser diode (LD) applications and devices such as GaN based transistors, rectifiers, thyristors, and cascode switches, and the like. Also provided is a method of forming a single crystal substrate comprised of gallium nitride having a dislocation density less than about 104 per cm2, substantially no tilt boundaries, and an oxygen impurity level of less than 1019 cm-3, and homoepitaxially forming at least one semiconductor layer on the substrate and an. electronic device.

公开(公告)号：EP1490537B1

公开(公告)日：2011-04-13

申请号：EP03709199.8

申请日：2003-02-21

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  WEBB, Steven, William ,  VAGARALI, Suresh, Shankarappa ,  KADIOGLU, Yavuz ,  PARK,Dong-Sil ,  CHEN, Zheng

IPC分类号： C30B9/00 ,  C30B29/40

CPC分类号： C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

摘要： A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

公开(公告)号：EP1230005B1

公开(公告)日：2007-01-03

申请号：EP00967039.9

申请日：2000-09-28

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  NARANG, Kristi, Jean

IPC分类号： B01J3/06 ,  C01G15/00

CPC分类号： B01J3/062 ,  B01J2203/0665 ,  B01J2203/068

摘要： A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride (15); providing mineralizer (17); providing solvent (17); providing a capsule (10); disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule; disposing the capsule in a pressure cell (1); and subjecting the pressure cell to high pressure and high tempeature (HPHT) conditions for a length of time sufficient to dissolve the source gallium nitride and re-precipitate the source gallium nitride into at least one gallium nitride crystal. The invention also provides for gallium nitride crystals formed by the processes of the invention.