公开(公告)号：EP0827182A2

公开(公告)日：1998-03-04

申请号：EP97306647.5

申请日：1997-08-29

申请人： HITACHI, LTD.

发明人： Watanabe, Seiichi ,  Sumiya, Masahiro ,  Furuse, Muneo ,  Tamura, Hitoshi

IPC分类号： H01J37/32

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： A coaxial passage (8) for supplying microwaves is vertically provided over a dielectric window (2) forming part of a processing chamber (1), and a conductor plate (10) for transmitting the microwaves is arranged over the dielectric window (2) which is positioned on the outer circumference of the coaxial passage (8). A microwave transmission passage can be formed between the surface of a plasma so produced as to have a critical electron density n o , and the conductor plate (10) thereby to transmit the microwaves without any reflection along the dielectric window (2) uniformly from the center to the outer circumference.
As a result, there is achieved an effect that a plasma can be produced stably and uniformly to perform plasma processing with excellent reproducibility and uniformity.

摘要翻译： 用于供应微波的同轴通道（8）垂直地设置在形成处理室（1）的一部分的电介质窗口（2）上，并且用于传输微波的导体板（10）布置在电介质窗口（2）上方， 位于同轴通道（8）的外圆周上。 微波传输通道可以形成在如此产生的具有临界电子密度no的等离子体的表面和导体板（10）之间，从而沿着介电窗（2）均匀地传输微波而没有任何反射从中心 到外围。 结果，实现了稳定且均匀地生产等离子体以实现具有优异再现性和均匀性的等离子体处理的效果。

公开(公告)号：EP0725164A2

公开(公告)日：1996-08-07

申请号：EP96106180.1

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

公开(公告)号：EP0502269A1

公开(公告)日：1992-09-09

申请号：EP91301844.6

申请日：1991-03-06

申请人： HITACHI, LTD.

发明人： Watanabe, Seiichi ,  Nawata, Makoto ,  Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Kanai, Saburo ,  Kawasaki, Yoshinao

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192

摘要： Herein disclosed are a microwave plasma treating method and a system therefor. A slow wave structure (19) is disposed in the propagation region of microwaves, and the microwaves are thus introduced at a delayed phase velocity into a discharge chamber 10 in which gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to much more charged particles in the plasma. Thus, the plasma of high density is generated to improve the plasma treating rate.

摘要翻译： 本文公开了微波等离子体处理方法及其系统。 慢波结构（19）设置在微波的传播区域中，并且微波因此以延迟的相速度被引入放电室10中，其中气体被转换成等离子体。 因此，将微波的相速度调节到相对较低的速度，在该速度下，带电粒子最密集地分布在等离子体中，使得能量可以有效地转化成等离子体中更多的带电粒子。 因此，产生高密度的等离子体以提高等离子体处理速率。

公开(公告)号：EP0478283A2

公开(公告)日：1992-04-01

申请号：EP91308702.9

申请日：1991-09-24

申请人： HITACHI, LTD.

发明人： Kanai, Saburo ,  Kawasaki, Yoshinao ,  Ichihashi, Kazuaki ,  Watanabe, Seiichi ,  Nawata, Makoto

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means (30a) isolated from a waveguide (110a) for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples (90), such as semiconductor device substrates, to an etching process, a film forming process, etc.
According to the present invention, the microwaves are introduced into the electric discharge means (30a) in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample (90) can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface processed.

摘要翻译： 本发明涉及微波等离子体处理方法和装置。 更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从用于传播微波并且具有等离子体产生区域的波导（110a）隔离的放电装置（30a），该方法和 设备非常适合于对诸如半导体器件基板的样品（90）进行蚀刻处理，成膜工艺等。根据本发明，微波对应于 只有其行进方向，从而可以急剧增强对应于样品（90）的待处理表面的等离子体密度分布的均匀性，使得通过利用这种等离子体处理的样品可以获得增强的处理均匀性 表面处理。

公开(公告)号：EP0554039B1

公开(公告)日：1996-11-20

申请号：EP93300534.0

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

公开(公告)号：EP0827182A3

公开(公告)日：1998-08-26

申请号：EP97306647.5

申请日：1997-08-29

申请人： HITACHI, LTD.

发明人： Watanabe, Seiichi ,  Sumiya, Masahiro ,  Furuse, Muneo ,  Tamura, Hitoshi

IPC分类号： H01J37/32

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： A coaxial passage (8) for supplying microwaves is vertically provided over a dielectric window (2) forming part of a processing chamber (1), and a conductor plate (10) for transmitting the microwaves is arranged over the dielectric window (2) which is positioned on the outer circumference of the coaxial passage (8). A microwave transmission passage can be formed between the surface of a plasma so produced as to have a critical electron density n o , and the conductor plate (10) thereby to transmit the microwaves without any reflection along the dielectric window (2) uniformly from the center to the outer circumference. As a result, there is achieved an effect that a plasma can be produced stably and uniformly to perform plasma processing with excellent reproducibility and uniformity.

摘要翻译： 用于提供微波的同轴通道（8）垂直地设置在形成处理室（1）的一部分的电介质窗口（2）上，并且用于传输微波的导体板（10）布置在电介质窗口（2）的上方， 位于同轴通道（8）的外圆周上。 可以在等离子体的表面之间形成微波传输通道，使得其具有临界电子密度，并且导体板（10）从而从介质窗口（2）均匀地透射微波而没有任何反射从中心 到外围。 结果，实现了能够以优异的再现性和均匀性稳定均匀地制造等离子体进行等离子体处理的效果。

公开(公告)号：EP0791949A2

公开(公告)日：1997-08-27

申请号：EP97301114.1

申请日：1997-02-20

申请人： HITACHI, LTD.

发明人： Watanabe, Seiichi ,  Furuse, Muneo ,  Tanura, Hitoshi ,  Otsubo, Toru

IPC分类号： H01J37/32

CPC分类号： H01J37/32247 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32284

摘要： The present invention relates to a plasma processing method and apparatus for generating a plasma with microwaves to subject a substrate to be treated such as a wafer to a plasma processing such as an etching or filming treatment.
In the plasma processing method and apparatus comprising: radiating microwave from the slot antennas (8) which set at the bottom of resonator; generating plasma by using the microwave; and processing the sample by the plasma, the plasma of a ring-form is generated by the microwave radiated from the slot antennas (8) which are each disposed at an angle neither in parallel to nor perpendicular to a surface current to flow on a slot antenna plate. Thereby, the sample is uniformly processed.

摘要翻译： 本发明涉及一种等离子体处理方法和装置，用于利用微波产生等离子体，以使诸如晶片等被处理的基板经受诸如蚀刻或成膜处理的等离子体处理。 在等离子体处理方法和装置中，包括：从设置在谐振器底部的缝隙天线（8）辐射微波; 通过微波产生等离子体; 并且通过等离子体处理样品，通过从缝隙天线（8）辐射的微波产生环形的等离子体，每个微波天线均以不平行于或垂直于表面电流的角度设置，以在槽上流动 天线板。 由此，将样品均匀地加工。

公开(公告)号：EP0478283B1

公开(公告)日：1996-12-27

申请号：EP91308702.9

申请日：1991-09-24

申请人： HITACHI, LTD.

发明人： Kanai, Saburo ,  Kawasaki, Yoshinao ,  Ichihashi, Kazuaki ,  Watanabe, Seiichi ,  Nawata, Makoto

IPC分类号： H01J37/32

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32266

公开(公告)号：EP0725164A3

公开(公告)日：1996-10-09

申请号：EP96106180.1

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有沿微波从微波发生器（1）至等离子体形成区域中的低压工艺腔室中传播的波导（19）。 波导（19）具有大的横截面面积，以使等离子体的大区域来实现。 均匀性和等离子体的稳定性是由一个限流模式（20）抑制的传播模式的所有其否则容易在宽的波导要发生的混合改善。 时尚限制器（20）besteht导电分隔等离子体形成区域之前它们将波导的横截面为一个数组，子引导件的。

公开(公告)号：EP0674334A1

公开(公告)日：1995-09-27

申请号：EP95103754.8

申请日：1995-03-15

申请人： HITACHI, LTD.

发明人： Watanabe, Seiichi ,  Furuse, Muneo ,  Shirayone, Shigeru ,  Kaji, Tetsunori

IPC分类号： H01J37/32

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32293 ,  H01J37/32678

摘要： The invention relates generally to plasma processing apparatus and more particularly to a plasma processing apparatus fit for use in subjecting a specimen such as a semiconductor element substrate to etching, filming and the like by means of a microwave plasma. In an embodiment of the invention a space is foreseen between slot antennas (7) for radiating microwaves and a dielectric microwave penetrating window (2) which forms part of a processing chamber (1) and is used for introducing the microwaves into the processing chamber in a plasma processing apparatus using microwaves.

摘要翻译： 本发明一般涉及等离子体处理装置，更具体地涉及一种适用于通过微波等离子体对诸如半导体元件基板的试样进行蚀刻，成膜等的等离子体处理装置。 在本发明的一个实施例中，在用于辐射微波的缝隙天线（7）和形成处理室（1）的一部分的电介质微波穿透窗（2）之间预见了一个空间，并用于将微波引入处理室 使用微波的等离子体处理装置。