Microcomputer and microcomputer system
    2.
    发明公开
    Microcomputer and microcomputer system 失效
    Mikrocomputer和Mikrocomputersystem。

    公开(公告)号:EP0597307A1

    公开(公告)日:1994-05-18

    申请号:EP93117256.3

    申请日:1993-10-25

    IPC分类号: G06F13/42 G06F15/78

    摘要: A microcomputer that is easy to use and connected direct to such memories as dynamic and static RAM's and to other peripheral circuits. The microcomputer has strobe signal output terminals CASH * , CASL * and RAS * for direct connection to a dynamic RAM, and chip select signal output terminals CSO * through CS6 * for outputting a chip select signal in parallel with the output from the strobe signal output terminals. The microcomputer further includes address output terminals for outputting a non-multiplexed or multiplexed address signal as needed, and data I/O terminals for selectively outputting the address signal to comply with a multiple-bus interface scheme.

    摘要翻译: 一种易于使用和直接连接到诸如动态和静态RAM以及其他外围电路之类的存储器的微型计算机。 微型计算机具有选通信号输出端子CASH *,CASL *和RAS *,用于直接连接到动态RAM,以及芯片选择信号输出端子CS0 *至CS6 *,用于与选通信号输出的输出并行输出芯片选择信号 终端。 微型计算机还包括用于根据需要输出未复用或复用的地址信号的地址输出端子和用于选择性地输出地址信号以符合多总线接口方案的数据I / O端子。

    Semiconductor device
    8.
    发明公开
    Semiconductor device 审中-公开
    半导体器件

    公开(公告)号:EP1233447A2

    公开(公告)日:2002-08-21

    申请号:EP01120671.1

    申请日:2001-08-31

    申请人: Hitachi, Ltd.

    IPC分类号: H01L21/762 H01L27/088

    摘要: A semiconductor device comprises an embedded insulation layer (101) formed on a semiconductor substrate (100), plural power semiconductor elements (2, 3) formed on a semiconductor substrate (100) on the embedded insulation layer, a trench (4) formed on the semiconductor substrate and isolating between the power semiconductor elements, and an isolator (5) insulating and driving control electrodes of the power semiconductor elements, and the power semiconductor elements (2, 3) such as transistors can be used, being connected to each other in series.

    摘要翻译: 一种半导体器件,包括形成在半导体衬底(100)上的嵌入绝缘层(101),在所述嵌入绝缘层上的半导体衬底(100)上形成的多个功率半导体元件(2,3),在所述半导体衬底 半导体基板之间以及功率半导体元件与功率半导体元件的绝缘驱动控制电极之间的绝缘以及功率半导体元件(2,3)等晶体管的功率半导体元件(2,3)之间的绝缘,可以使用彼此连接 串联。