公开(公告)号：EP0653775B1

公开(公告)日：1999-02-10

申请号：EP94117757.8

申请日：1994-11-10

申请人： Hitachi, Ltd.

发明人： Sato, Yoshiaki ,  Katamoto, Mitsuru ,  Kawahara, Hironobu ,  Soraoka, Minoru ,  Umemoto, Tsuyoshi ,  Kihara, Hideki ,  Kudo, Katsuyoshi ,  Yukimasa, Tooru ,  Kakutani, Hirofumi

IPC分类号： H01J37/32

CPC分类号： H01J37/32495 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32256 ,  H01J37/32678 ,  H01J37/32862

公开(公告)号：EP1126514A2

公开(公告)日：2001-08-22

申请号：EP01110287.8

申请日：1990-03-09

申请人： Hitachi, Ltd.

发明人： Fujimoto, Kotaro ,  Tanaka, Yoshie ,  Kawahara, Hironobu ,  Sato, Yoshiaki

IPC分类号： H01L21/3213

CPC分类号： H01L21/02071 ,  H01L21/02046 ,  H01L21/32136

摘要： A sample treating method and apparatus for treating a sample such as a semiconductor element substrate or the like, by etching and anticorrosion-treatment, uses an anticorrosion gas plasma to remove adhered matters formed by the etching of the sample. The anticorrosion gas comprises halogen gas or inert gas. Wet-type anticorrosion treatment is not required, enabling the throughput to be improved in treating the samples. Both etching and anticorrosion treatment may take place in the same chamber (90). Passivation treatmemt, e.g. by oxygen plasma or ozone, may take place subsequently in a separate chamber (91).

摘要翻译： 用于通过蚀刻和防腐处理来处理诸如半导体元件衬底等的样品的样品处理方法和设备使用防腐气体等离子体来除去通过蚀刻所形成的附着物质。 防腐气体包括卤素气体或惰性气体。 不需要湿式防腐处理，能够提高处理样品的产量。 蚀刻和防腐处理都可以在同一个室（90）中进行。 钝化处理，例如 通过氧等离子体或臭氧，可以随后在单独的室（91）中进行。

公开(公告)号：EP0387097A1

公开(公告)日：1990-09-12

申请号：EP90302566.6

申请日：1990-03-09

申请人： HITACHI, LTD.

发明人： Fujimoto, Kotaro ,  Tanaka, Yoshie ,  Kawahara, Hironobu ,  Sato, Yoshiaki

IPC分类号： H01L21/321

CPC分类号： H01L21/02071 ,  H01L21/02046 ,  H01L21/32136

摘要： A sample treating method and apparatus for treating a sample such as a semiconductor element substrate or the like, by etching and anticorrosion-­treatment, uses an anticorrosion gas plasma to remove adhered matters formed by the etching of the sample. The anticorrosion gas comprises halogen gas or inert gas. Wet-type anticorrosion treatment is not required, enabling the throughput to be improved in treating the samples. Both etching and anticorrosion treatment may take place in the same chamber (90). Passivation treatmemt, e.g. by oxygen plasma or ozone, may take place subsequently in a separate chamber (91).

摘要翻译： 用于通过蚀刻和防腐处理来处理诸如半导体元件衬底等的样品的样品处理方法和设备使用防腐气体等离子体来除去通过蚀刻所形成的附着物质。 防腐气体包括卤素气体或惰性气体。 不需要湿式防腐处理，能够提高处理样品的产量。 蚀刻和防腐处理都可以在同一个室（90）中进行。 钝化处理，例如 通过氧等离子体或臭氧，可以随后在单独的室（91）中进行。

公开(公告)号：EP0385590A1

公开(公告)日：1990-09-05

申请号：EP90301267.2

申请日：1990-02-07

申请人： HITACHI, LTD.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： C23F4/00 ,  H01L21/321 ,  H01J37/18

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： A method and apparatus for processing a sample comprises etching the sample by means (10; 11-14) of an etching plasma, and then treating the sample by means (20-21) of a second plasma, to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting (30, 31) the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of said surface exposed by steps, and drying (41) the sample.

摘要翻译： 用于处理样品的方法和装置包括用蚀刻等离子体的方式（10; 11-14）蚀刻样品，然后用第二等离子体的方法（20-21）处理样品，以除去由第二等离子体形成的残留腐蚀性化合物 蚀刻等离子体。 通过在第二等离子体处理后将样品的表面与至少一种液体接触（30,31）以除去残留的腐蚀性化合物和防止腐蚀，以实现以下中的至少一种：（a） 腐蚀性化合物和（b）通过步骤暴露的所述表面的钝化，并干燥（41）样品。

公开(公告)号：EP0416774B1

公开(公告)日：2000-11-15

申请号：EP90309106.4

申请日：1990-08-20

申请人： HITACHI, LTD.

发明人： Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Nawata, Makoto ,  Kawahara, Hironobu ,  Sato Yoshiaki ,  Torii, Yoshimi ,  Kawaraya, Akira ,  Sato, Yoshie

IPC分类号： H01L21/321

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

公开(公告)号：EP0385590B1

公开(公告)日：1997-05-02

申请号：EP90301267.2

申请日：1990-02-07

申请人： HITACHI, LTD.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： C23F4/00 ,  H01L21/321 ,  H01J37/18

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

公开(公告)号：EP0416774A1

公开(公告)日：1991-03-13

申请号：EP90309106.4

申请日：1990-08-20

申请人： HITACHI, LTD.

发明人： Fukuyama, Ryooji ,  Kakehi, Yutaka ,  Nawata, Makoto ,  Kawahara, Hironobu ,  Sato Yoshiaki ,  Torii, Yoshimi ,  Kawaraya, Akira ,  Sato, Yoshie

IPC分类号： H01L21/321

CPC分类号： H01L21/02071 ,  C23F4/00 ,  Y10S438/906 ,  Y10T428/12528 ,  Y10T428/12736 ,  Y10T428/31678

摘要： A post-etch treatment method is provided which is capable of imparting high corrosion prevention performance to aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has an oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, a plasma is generated using a gas having a hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-­containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr).

摘要翻译： 提供了能够赋予含铝布线膜高的防腐蚀性能的蚀刻后处理方法。 使用具有氧成分的气体的等离子体处理使用卤素型气体蚀刻的含铝布线材料的样品，并且使含铝布线材料上形成的抗蚀剂与氧反应并除去。 此外，使用具有氢成分的气体产生等离子体，或者该气体在样品表面液化成液滴，使得卤素成分（Cl，Br等）通过蚀刻处理粘附到含铝布线材料 与氢反应，并有效地以氯化氢（HCl）或溴化氢（HBr）的形式除去。

公开(公告)号：EP0751552B1

公开(公告)日：2003-07-30

申请号：EP96112707.3

申请日：1990-02-07

申请人： Hitachi, Ltd.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： H01L21/00

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

公开(公告)号：EP1126514A3

公开(公告)日：2003-02-12

申请号：EP01110287.8

申请日：1990-03-09

申请人： Hitachi, Ltd.

发明人： Fujimoto, Kotaro ,  Tanaka, Yoshie ,  Kawahara, Hironobu ,  Sato, Yoshiaki

IPC分类号： H01L21/3213

CPC分类号： H01L21/02071 ,  H01L21/02046 ,  H01L21/32136

摘要： A sample treating method for treating a sample such as a semiconductor element substrate or the like, by etching and anticorrosion-treatment, uses an anticorrosion gas plasma to remove adhered matters formed by the etching of the sample. The anticorrosion gas comprises halogen gas or inert gas. Wet-type anticorrosion treatment is not required, enabling the throughput to be improved in treating the samples. Both etching and anticorrosion treatment may take place in the same chamber (90). Passivation treatmemt, e.g. by oxygen plasma or ozone, may take place subsequently in a separate chamber (91).

公开(公告)号：EP0751552A1

公开(公告)日：1997-01-02

申请号：EP96112707.3

申请日：1990-02-07

申请人： HITACHI, LTD.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： H01L21/00 ,  H01J37/18

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： A method of processing a sample comprises etching the sample by means of an etching plasma, and then treating the sample by means of a second plasma, to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of said surface exposed by steps, and drying the sample.

摘要翻译： 处理样品的方法包括通过蚀刻等离子体蚀刻样品，然后借助于第二等离子体处理样品，以除去由蚀刻等离子体形成的残余腐蚀性化合物。 通过在第二等离子体处理之后将样品的表面与至少一种液体接触以去除残留的腐蚀性化合物和防止腐蚀，以实现（a）去除残留的腐蚀性化合物和（b）中的至少一种 ）通过步骤暴露的所述表面的钝化，并干燥样品。