公开(公告)号：EP0871211A3

公开(公告)日：1999-12-08

申请号：EP98302036.3

申请日：1998-03-18

申请人： Hitachi, Ltd.

发明人： Kitsunai, Hiroyuki ,  Tsumaki, Nobuo ,  Kakuta, Shigeru ,  Nojiri, Kazuo ,  Takahashi, Kazue

IPC分类号： H01L21/306 ,  C23C16/44

CPC分类号： H01L21/02046 ,  C23C16/4405 ,  H01L21/30604 ,  Y10S438/905

摘要： The dry cleaning method is capable of removing deposition films left adhered to the inner walls of semiconductor manufacturing apparatus i.e. removing dust production sources. To this end, the dry cleaning process includes a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing etching reaction products. It thus becomes possible to eliminate dust generation due to peeling off of deposition films with an increase in number of wafers being processed, which in turn increases the manufacturing yield and working efficiency of the manufacturing apparatus.

摘要翻译： 干式清洗方法能够去除附着在半导体制造装置的内壁上的沉积膜，即去除灰尘产生源。 为此，除了除去蚀刻的步骤之外，干法清洗工艺包括除去离子溅射物质或该装置内部构件材料的内部构件材料的产物或这种设备内部构件材料的化合物和蚀刻气体的步骤 反应产物。 因此，随着处理的晶片数量的增加，可以消除由于沉积膜的剥离引起的灰尘的产生，这又提高了制造装置的制造成品率和工作效率。

公开(公告)号：EP0554039B1

公开(公告)日：1996-11-20

申请号：EP93300534.0

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

公开(公告)号：EP0385590A1

公开(公告)日：1990-09-05

申请号：EP90301267.2

申请日：1990-02-07

申请人： HITACHI, LTD.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： C23F4/00 ,  H01L21/321 ,  H01J37/18

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： A method and apparatus for processing a sample comprises etching the sample by means (10; 11-14) of an etching plasma, and then treating the sample by means (20-21) of a second plasma, to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting (30, 31) the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of said surface exposed by steps, and drying (41) the sample.

摘要翻译： 用于处理样品的方法和装置包括用蚀刻等离子体的方式（10; 11-14）蚀刻样品，然后用第二等离子体的方法（20-21）处理样品，以除去由第二等离子体形成的残留腐蚀性化合物 蚀刻等离子体。 通过在第二等离子体处理后将样品的表面与至少一种液体接触（30,31）以除去残留的腐蚀性化合物和防止腐蚀，以实现以下中的至少一种：（a） 腐蚀性化合物和（b）通过步骤暴露的所述表面的钝化，并干燥（41）样品。

公开(公告)号：EP0871211A2

公开(公告)日：1998-10-14

申请号：EP98302036.3

申请日：1998-03-18

申请人： Hitachi, Ltd.

发明人： Kitsunai, Hiroyuki ,  Tsumaki, Nobuo ,  Kakuta, Shigeru ,  Nojiri, Kazuo ,  Takahashi, Kazue

IPC分类号： H01L21/306 ,  C23C16/44

CPC分类号： H01L21/02046 ,  C23C16/4405 ,  H01L21/30604 ,  Y10S438/905

摘要： The dry cleaning method is capable of removing deposition films left adhered to the inner walls of semiconductor manufacturing apparatus i.e. removing dust production sources. To this end, the dry cleaning process includes a step of removing either ion sputtered matter or products of the internal member materials of the apparatus or chemical compounds of such apparatus internal member materials and of an etching gas, in addition to a step of removing etching reaction products. It thus becomes possible to eliminate dust generation due to peeling off of deposition films with an increase in number of wafers being processed, which in turn increases the manufacturing yield and working efficiency of the manufacturing apparatus.

公开(公告)号：EP0385590B1

公开(公告)日：1997-05-02

申请号：EP90301267.2

申请日：1990-02-07

申请人： HITACHI, LTD.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： C23F4/00 ,  H01L21/321 ,  H01J37/18

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

公开(公告)号：EP0725164A2

公开(公告)日：1996-08-07

申请号：EP96106180.1

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

公开(公告)号：EP0751552B1

公开(公告)日：2003-07-30

申请号：EP96112707.3

申请日：1990-02-07

申请人： Hitachi, Ltd.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： H01L21/00

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

公开(公告)号：EP0751552A1

公开(公告)日：1997-01-02

申请号：EP96112707.3

申请日：1990-02-07

申请人： HITACHI, LTD.

发明人： Kawasaki, Yoshinao ,  Kawahara, Hironobu ,  Sato, Yoshiaki ,  Fukuyama, Ryooji ,  Nojiri, Kazuo ,  Torii, Yoshimi

IPC分类号： H01L21/00 ,  H01J37/18

CPC分类号： H01L21/67161 ,  C23F4/00 ,  H01J37/185 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67751

摘要： A method of processing a sample comprises etching the sample by means of an etching plasma, and then treating the sample by means of a second plasma, to remove residual corrosive compounds formed by the etching plasma. Removal of the residual corrosive compounds and prevention of corrosion is much improved by contacting the surface of the sample after the second plasma treatment with at least one liquid in order to effect at least one of (a) removal of the residual corrosive compounds and (b) passivation of said surface exposed by steps, and drying the sample.

摘要翻译： 处理样品的方法包括通过蚀刻等离子体蚀刻样品，然后借助于第二等离子体处理样品，以除去由蚀刻等离子体形成的残余腐蚀性化合物。 通过在第二等离子体处理之后将样品的表面与至少一种液体接触以去除残留的腐蚀性化合物和防止腐蚀，以实现（a）去除残留的腐蚀性化合物和（b）中的至少一种 ）通过步骤暴露的所述表面的钝化，并干燥样品。

公开(公告)号：EP0725164A3

公开(公告)日：1996-10-09

申请号：EP96106180.1

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有沿微波从微波发生器（1）至等离子体形成区域中的低压工艺腔室中传播的波导（19）。 波导（19）具有大的横截面面积，以使等离子体的大区域来实现。 均匀性和等离子体的稳定性是由一个限流模式（20）抑制的传播模式的所有其否则容易在宽的波导要发生的混合改善。 时尚限制器（20）besteht导电分隔等离子体形成区域之前它们将波导的横截面为一个数组，子引导件的。

公开(公告)号：EP0554039A1

公开(公告)日：1993-08-04

申请号：EP93300534.0

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有沿微波从微波发生器（1）至等离子体形成区域中的低压工艺腔室中传播的波导（19）。 波导（19）具有大的横截面面积，以使等离子体的大区域来实现。 均匀性和等离子体的稳定性是由一个限流模式（20）抑制的传播模式的所有其否则容易在宽的波导要发生的混合改善。 时尚限制器（20）besteht导电分隔等离子体形成区域之前它们将波导的横截面为一个数组，子引导件的。