公开(公告)号：EP1495365A4

公开(公告)日：2009-06-03

申请号：EP03723925

申请日：2003-04-01

Applicant: IBM

Inventor： PFEIFFER DIRK ,  ANGELOPOULOS MARIE ,  BABICH KATHERINA ,  BROCK PHILLIP ,  HUANG WU-SONG ,  MAHOROWALA ARPAN P ,  MEDEIROS DAVID R ,  SOORIYAKUMARAN RATNAM

IPC: G03F7/11 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/26 ,  H01L21/312

CPC classification number: H01L21/0276 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/091 ,  Y10S430/151

Abstract: Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantagously useful with shorter wavelenght lithographic processes and/or have minimal residual acid content.

公开(公告)号：EP1595276A4

公开(公告)日：2012-03-28

申请号：EP04705307

申请日：2004-01-26

Applicant: IBM

Inventor： GATES STEPHEN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: G03G13/06 ,  H01L20060101 ,  H01L21/00 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/44 ,  H01L23/48 ,  H05B6/64

CPC classification number: H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/31144 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/316 ,  Y10S430/146 ,  Y10T428/31663

公开(公告)号：EP1595275A4

公开(公告)日：2007-10-31

申请号：EP04705302

申请日：2004-01-26

Applicant: IBM

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L23/532 ,  H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1≤v≤0.9, 0≤w≤0.5, 0.01≤x≤0.9, 0≤y≤0.7, 0.01≤z≤0.8 for v+w+x+y+Z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1