Patent search ap:("IBM") AND inv:"ESHUN EBENEZER E" Page 1

1.

发明公开
METAL GATE INTEGRATION STRUCTURE AND METHOD INCLUDING METAL FUSE, ANTI-FUSE AND/OR RESISTOR 审中-公开
Title translation: 集成结构和金属栅极程序，金属保护，防FUSE和/或电阻

公开(公告)号：EP2286444A4

公开(公告)日：2012-11-21

申请号：EP09747138

申请日：2009-04-28

Applicant: IBM

Inventor： ESHUN EBENEZER E , HE ZHONG-XIANG , RASSEL ROBERT M , COOLBAUGH DOUGLAS , GEBRESELASIE EPHREM G , WANG PING-CHUAN , KIM DEOK-KEE , KOTHANDARAMAN CHANDRASEKHARAN , ROBSON NORMAN W , MOY DAN , SAFRAN JOHN M , STEIN KENNETH J , HO HERBERT L , YAN HONGWEN

IPC: H01L23/525 , H01L27/06

CPC classification number: H01L27/0629 , H01L23/5252 , H01L2924/0002 , H01L2924/00

2.

发明公开
JUNCTION FIELD EFFECT TRANSISTOR WITH A HYPERABRUPT JUNCTION 有权
Title translation: WITH A超突变屏障JFET

公开(公告)号：EP2168163A4

公开(公告)日：2012-08-01

申请号：EP08771894

申请日：2008-06-25

Applicant: IBM

Inventor： ESHUN EBENEZER E , JOHNSON JEFFREY B , PHELPS RICHARD A , RASSEL ROBERT M , ZIERAK MICHAEL L

IPC: H01L29/808 , H01L21/337 , H01L29/36

CPC classification number: H01L29/808 , H01L27/0617 , H01L27/098 , H01L29/36 , H01L29/66901

3.

发明公开
METAL-INSULATOR-METAL CAPACITOR AND METHOD OF FABRICATION 审中-公开
Title translation: 金属 - 绝缘体 - 金属电容器及其方法

公开(公告)号：EP1671358A4

公开(公告)日：2009-10-21

申请号：EP04789450

申请日：2004-09-30

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS D , ESHUN EBENEZER E , GAMBINO JEFFREY P , HE ZHONG-XIANG , RAMACHANDRAN VIDHYA

IPC: H01L27/108 , H01L21/02 , H01L21/768 , H01L29/76 , H01L29/94 , H01L31/119

CPC classification number: H01L21/7687 , H01L23/5223 , H01L23/53238 , H01L28/75 , H01L2924/0002 , H01L2924/00

4.

发明公开
THIN FILM RESISTORS WITH CURRENT DENSITY ENHANCING LAYER (CDEL) 有权
Title translation: 的电流密度的增强层的薄膜电阻器（CDEL）

公开(公告)号：EP1849167A4

公开(公告)日：2010-06-09

申请号：EP06720491

申请日：2006-02-08

Applicant: IBM

Inventor： CHINTHAKINDI ANIL K , ESHUN EBENEZER E

IPC: H01C1/012 , H01L21/02 , H01L23/522 , H01L27/06

CPC classification number: H01L28/24 , H01C7/006 , H01L23/5228 , H01L27/0629 , H01L27/0688 , H01L2924/0002 , H01L2924/00

5.

发明公开
FORMATION OF METAL-INSULATOR METAL CAPACITOR SIMULTANEOUSLY WITH ALUMINUM METAL WIRING LEVEL USING A HARDMASK 审中-公开
Title translation: 同时地形成金属 - 绝缘体 - 金属电容器与铝金属布线LEVEL使用硬掩模

公开(公告)号：EP1792343A4

公开(公告)日：2009-11-11

申请号：EP05754954

申请日：2005-05-26

Applicant: IBM

Inventor： COOLBAUGH DOUGLAS D , ESHUN EBENEZER E , FEILCHENFELD NATALIE , GAUTSCH MICHAEL L , HE ZHONG-XIANG , MOON MATTHEW D , RAMACHANDRAN VIDHYA , WATERHOUSE BARBARA

IPC: H01L21/8242 , H01L21/02 , H01L21/20 , H01L23/522 , H01L27/01 , H01L27/08

CPC classification number: H01L23/5223 , H01L27/016 , H01L27/0805 , H01L28/40 , H01L2924/0002 , Y10T29/49002 , H01L2924/00

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