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公开(公告)号：EP3718182A1
公开(公告)日：2020-10-07
申请号：EP19703903.5
申请日：2019-01-18
申请人： IQE plc
发明人： CLARK, Andrew , HAMMOND, Rich , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01S5/026 , H01L21/02 , H01L21/8258
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公开(公告)号：EP3714482A1
公开(公告)日：2020-09-30
申请号：EP18821784.8
申请日：2018-11-21
申请人： IQE Plc.
发明人： CLARK, Andrew , PELZEL, Rodney , JOHNSON, Andrew , JOEL, Andrew, Martin , DALY, Aidan John , JANDL, Adam Christopher
IPC分类号： H01L21/20
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公开(公告)号：EP3741015A1
公开(公告)日：2020-11-25
申请号：EP19704126.2
申请日：2019-01-18
申请人： IQE plc
发明人： HAMMOND, Rich , PELZEL, Rodney , NELSON, Drew , CLARK, Andrew , CHESKIS, David , LEBBY, Michael
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公开(公告)号：EP3472873B1
公开(公告)日：2020-08-19
申请号：EP17735698.7
申请日：2017-06-19
申请人： IQE plc
IPC分类号： H01L41/08 , H01L41/319 , H03H3/02 , H03H9/02
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公开(公告)号：EP3488462A1
公开(公告)日：2019-05-29
申请号：EP17731357.4
申请日：2017-06-02
申请人： IQE Plc.
发明人： CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
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公开(公告)号：EP3915133A1
公开(公告)日：2021-12-01
申请号：EP20702592.5
申请日：2020-01-23
申请人： IQE plc
IPC分类号： H01L21/285
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公开(公告)号：EP3472873A1
公开(公告)日：2019-04-24
申请号：EP17735698.7
申请日：2017-06-19
申请人： IQE Plc.
IPC分类号： H01L41/08 , H01L41/319 , H03H3/02 , H03H9/02
摘要： Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.
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8.发明公开
公开(公告)号：EP3375091A1
公开(公告)日：2018-09-19
申请号：EP16801906.5
申请日：2016-11-02
申请人： IQE Plc.
发明人： PELZEL, Rodney , DARGIS, Rytis , CLARK, Andrew , WILLIAMS, Howard , CHIN, Patrick , LEBBY, Michael
IPC分类号： H03H3/02 , H03H3/08 , H03H9/17 , H01L41/08 , H01L41/083 , H01L41/319
CPC分类号： H03H1/0007 , H01L23/66 , H01L27/0688 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/778 , H01L41/0815 , H01L41/083 , H01L41/319 , H01L2223/6672 , H03H3/02 , H03H3/08 , H03H9/175 , H03H2001/0064 , H03H2001/0085 , H03H2003/025
摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).
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公开(公告)号：EP3465744A1
公开(公告)日：2019-04-10
申请号：EP17731356.6
申请日：2017-06-02
申请人： IQE Plc.
发明人： CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
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公开(公告)号：EP3465743A1
公开(公告)日：2019-04-10
申请号：EP17730324.5
申请日：2017-06-02
申请人： IQE Plc.
发明人： CLARK, Andrew , DARGIS, Rytis , LEBBY, Michael , PELZEL, Rodney
IPC分类号： H01L21/20
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