FABRICATING STACKS OF IC CHIPS BY SEGMENTING A LARGER STACK
    1.
    发明公开
    FABRICATING STACKS OF IC CHIPS BY SEGMENTING A LARGER STACK 失效
    生产CHIPS堆栈通过分割GREATER桩。

    公开(公告)号:EP0676087A1

    公开(公告)日:1995-10-11

    申请号:EP94909418.0

    申请日:1993-12-16

    IPC分类号: H01L27 H01L21

    摘要: A method for fabricating stacks of IC chips (20) into modules providing high density electronics. A relatively large number of layers (26) are stacked, and then integrated by curing adhesive (44) applied between adjacent layers (26). A large stack (20) is formed, various processing steps are performed on the access plane face (24) of the large stack (20), and then the large stack (20) is segmented to form a plurality of smaller, or short, stacks (22). Means (134) are provided for causing separation of the larger stack (20) into smaller stacks (22), without disturbing the adhesive (44) which binds the layers (26) within each small stack (22).

    FABRICATING STACKS OF IC CHIPS BY SEGMENTING A LARGER STACK
    2.
    发明授权
    FABRICATING STACKS OF IC CHIPS BY SEGMENTING A LARGER STACK 失效
    芯片堆栈均通过分割GREATER桩生产

    公开(公告)号:EP0676087B1

    公开(公告)日:2003-11-12

    申请号:EP94909418.9

    申请日:1993-12-16

    摘要: A method for fabricating stacks of IC chips (20) into modules providing high density electronics. A relatively large number of layers (26) are stacked, and then integrated by curing adhesive (44) applied between adjacent layers (26). A large stack (20) is formed, various processing steps are performed on the access plane face (24) of the large stack (20), and then the large stack (20) is segmented to form a plurality of smaller, or short, stacks (22). Means (134) are provided for causing separation of the larger stack (20) into smaller stacks (22), without disturbing the adhesive (44) which binds the layers (26) within each small stack (22).