公开(公告)号：EP3311400A1

公开(公告)日：2018-04-25

申请号：EP15895835.5

申请日：2015-06-19

申请人： Intel Corporation

发明人： YANG, Xiaodong ,  LIN, Jui-Yen ,  PHOA, Kinyip ,  NIDHI, Nidhi ,  CHEN, Yi Wei ,  SHIH, Kun-huan ,  HAFEZ, Walid M. ,  TSAI, Curtis

IPC分类号： H01L21/60

CPC分类号： H01L29/7813 ,  H01L23/481 ,  H01L29/0653 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/945

摘要： A vertical transistor is described that uses a through silicon via as a gate. In one example, the structure includes a substrate, a via in the substrate, the via being filled with a conductive material and having a dielectric liner, a deep well coupled to the via, a drain area coupled to the deep well having a drain contact, a source area between the drain area and the via having a source contact, and a gate contact over the via.

公开(公告)号：EP4101005A1

公开(公告)日：2022-12-14

申请号：EP20917327.7

申请日：2020-02-08

申请人： INTEL Corporation

发明人： THIMMEGOWDA, Deepak ,  CLEEREMAN, Brian J. ,  GOWDA, Srivardhan ,  LIN, Jui-Yen ,  LIU, Liu ,  PARAT, Krishna ,  SEL, Jong Sun ,  ZHOU, Baosuo

IPC分类号： H01L27/1157

公开(公告)号：EP3311401A1

公开(公告)日：2018-04-25

申请号：EP15896494.0

申请日：2015-06-22

申请人： Intel Corporation

发明人： CHEN, Yi Wei ,  PHOA, Kinyip ,  NIDHI, Nidhi ,  LIN, Jui-Yen ,  SHIH, Kun-Huan ,  YANG, Xiaodong ,  HAFEZ, Walid M. ,  TSAI, Curtis

IPC分类号： H01L21/60

CPC分类号： H01L23/481 ,  H01L21/76831 ,  H01L21/76898 ,  H01L27/0629 ,  H01L27/1203 ,  H01L28/90 ,  H01L29/945

摘要： Techniques are disclosed for providing on-chip capacitance using through-body-vias (TBVs). In accordance with some embodiments, a TBV may be formed within a semiconductor layer, and a dielectric layer may be formed between the TBV and the surrounding semiconductor layer. The TBV may serve as one electrode (e.g., anode) of a TBV capacitor, and the dielectric layer may serve as the dielectric body of that TBV capacitor. In some embodiments, the semiconductor layer serves as the other electrode (e.g., cathode) of the TBV capacitor. To that end, in some embodiments, the entire semiconductor layer may comprise a low-resistivity material, whereas in some other embodiments, low-resistivity region(s) may be provided just along the sidewalls local to the TBV, for example, by selective doping in those location(s). In other embodiments, a conductive layer formed between the dielectric layer and the semiconductor layer serves as the other electrode (e.g., cathode) of the TBV capacitor.