公开(公告)号：EP0243723A2

公开(公告)日：1987-11-04

申请号：EP87104933.4

申请日：1987-04-03

申请人： International Business Machines Corporation

发明人： Joshi, Rajiv Vasant

IPC分类号： H01L21/31 ,  H01L23/52

CPC分类号： H01L21/32051 ,  Y10S428/901 ,  Y10S438/974 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/1259 ,  Y10T428/1284 ,  Y10T428/24826 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A method for fabricating a structure, which includes a layer (2) containing a refractory metal and a substrate (3) to which the refractory metal-containing layer does not strongly adhere, there being a thin bonding layer (5) between the substrate (3) and the refractory metal-­containing layer (2) for providing good adherence between the refractory metal-containing layer and the substrate. The bonding layer (5) is an oxide, nitride or mixed osy-nitride layer initially prepared to be Si-rich in a surface region thereof. Inclusions (7) of the refractory metal are produced in the bonding layer (5) by substitu­ting the refractory metal for excess free silicon (6) therein. These inclusions become nucleation and bonding sites for refractory metal deposition, ensuring good adhesion.

摘要翻译： 一种用于制造结构，其包括一个层（2）含有难熔金属和底物（3）其中所述难熔金属含有层不牢固地粘附，有作为薄的粘结层（5）在基板之间（方法 3）和用于耐火含金属层和基片之间提供良好的粘附性的耐火含金属层（2）。 该粘结层（5）是一种氧化物，氮化物或混合OSY族氮化物层最初制备为富含Si的在其表面区域上。 难熔金属的夹杂物（7）在所述粘结层（5）通过置换所述难熔金属为过量的游离硅（6）。其中生产。 这些夹杂物成为难熔金属沉积成核和键合位点，确保良好的附着力。

公开(公告)号：EP0915501B1

公开(公告)日：2003-02-26

申请号：EP99101825.0

申请日：1995-07-05

申请人： International Business Machines Corporation

发明人： Joshi, Rajiv Vasant ,  Tejwani, Manu Jamnadas ,  Srikrishnan, Kris Venkatraman

IPC分类号： H01L21/321 ,  H01L21/768

CPC分类号： H01L21/76849 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53219 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12736 ,  Y10T428/1284 ,  Y10T428/12889 ,  Y10T428/12896 ,  H01L2924/00

公开(公告)号：EP0216157B1

公开(公告)日：1990-10-24

申请号：EP86111641.6

申请日：1986-08-22

申请人： International Business Machines Corporation

发明人： Iyer, Subramanian Srikanteswara ,  Joshi, Rajiv Vasant

IPC分类号： H01L21/285 ,  H01L21/60

CPC分类号： H01L21/76879 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/06 ,  C23F4/00 ,  H01L21/28562

公开(公告)号：EP0697730A3

公开(公告)日：1996-08-14

申请号：EP95110478.5

申请日：1995-07-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Joshi, Rajiv Vasant ,  Tejwani, Manu Jamnadas ,  Srikrishnan, Kris Venkatraman

IPC分类号： H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76849 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53219 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12736 ,  Y10T428/1284 ,  Y10T428/12889 ,  Y10T428/12896 ,  H01L2924/00

摘要： A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH₄ gas followed by WF₆ can be used to produce an in-situ hard cap of W x Ge y . Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 °C) without degrading the underlying metals.

公开(公告)号：EP0484263A1

公开(公告)日：1992-05-06

申请号：EP91480160.0

申请日：1991-10-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Brodsky, Stephen Bruce ,  Ryan, James Gardner ,  Joshi, Rajiv Vasant ,  Schepis, Dominic Joseph ,  Lechaton, John S.

IPC分类号： H01L21/225 ,  H01L23/485 ,  H01L21/285

CPC分类号： H01L21/76897 ,  H01L21/2254 ,  H01L21/28568 ,  H01L29/66272 ,  Y10S148/034 ,  Y10S148/035

摘要： A contact is provided in a self-aligned manner to a doped region a semiconductor substrate by first forming a layer (16) of a transition metal-boride compound over a selected region (20) on the substrate (10). A layer (18) of a transition metal-nitride compound is formed over the layer (16) of transition metal-boride compound, and the structure is heated to drive dopant from the layer of transition metal-boride compound into the substrate. Finally, the transition metal-boride/transition metal nitride layers are patterned to leave the desired contact.

摘要翻译： 通过首先在衬底（10）上的选定区域（20）上形成过渡金属硼化物化合物层（16），以自对准的方式将接触提供给掺杂区域的半导体衬底。 在过渡金属硼化合物的层（16）上形成过渡金属 - 氮化物化合物的层（18），并且将该结构加热以将掺杂剂从过渡金属硼化物化合物层驱动到衬底中。 最后，过渡金属 - 硼化物/过渡金属氮化物层被图案化以留下所需的接触。

公开(公告)号：EP0243723A3

公开(公告)日：1988-11-09

申请号：EP87104933

申请日：1987-04-03

申请人： International Business Machines Corporation

发明人： Joshi, Rajiv Vasant

IPC分类号： H01L21/31

CPC分类号： H01L21/32051 ,  Y10S428/901 ,  Y10S438/974 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/1259 ,  Y10T428/1284 ,  Y10T428/24826 ,  Y10T428/24917 ,  Y10T428/24926

摘要： A method for fabricating a structure, which includes a layer (2) containing a refractory metal and a substrate (3) to which the refractory metal-containing layer does not strongly adhere, there being a thin bonding layer (5) between the substrate (3) and the refractory metal-­containing layer (2) for providing good adherence between the refractory metal-containing layer and the substrate. The bonding layer (5) is an oxide, nitride or mixed osy-nitride layer initially prepared to be Si-rich in a surface region thereof. Inclusions (7) of the refractory metal are produced in the bonding layer (5) by substitu­ting the refractory metal for excess free silicon (6) therein. These inclusions become nucleation and bonding sites for refractory metal deposition, ensuring good adhesion.

公开(公告)号：EP0216157A3

公开(公告)日：1988-08-31

申请号：EP86111641

申请日：1986-08-22

申请人： International Business Machines Corporation

发明人： Iyer, Subramanian Srikanteswara ,  Joshi, Rajiv Vasant

IPC分类号： H01L21/285 ,  H01L21/60

CPC分类号： H01L21/76879 ,  C23C16/0281 ,  C23C16/04 ,  C23C16/06 ,  C23F4/00 ,  H01L21/28562

摘要： Metal, such as tungsten, contact regions for an integrated circuit are deposited on exposed portions of a silicon substrate having an apertured silicon dioxide layer thereon by the steps of:
(1) disposing the substrate in a deposition chamber; (2) introducing a gaseous compound of a metal into the cham­ber, which compound reacts with silicon so that metal from the compound substitutes for silicon in the surface of the subst­rate to form a deposited metal layer in the apertures in the silicon dioxide layer; and (3) introducing hydrogen into the chamber in addition to the gaseous compound whereby the hydrogen reacts with the gaseous compound to form a further deposition of the metal, the metal being deposited during said further deposition on the surface of both the previously deposited metal layer and the silicon dioxide layer. During step (3) an etching gas (e.g nitrogen trifluoride) which etches the metal when activated, is introduced into the chamber and a plasma struck to activate the etching gas. By controlling the amount of the etching gas introduced into the chamber and the elec­trical power coupled into the plasma, the silicon surface portions of the substrate are kept substantially free of the metal and a further deposit of the metal is produced on the previously deposited metal layer.

公开(公告)号：EP0221309A1

公开(公告)日：1987-05-13

申请号：EP86112933.6

申请日：1986-09-19

申请人： International Business Machines Corporation

发明人： Meyerson, Bernard Steele ,  Joshi, Rajiv Vasant ,  Rosenberg, Robert ,  Patel, Vishnubhai Vithalbhai

IPC分类号： G11B5/72

CPC分类号： G11B5/72 ,  Y10S428/90 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

摘要： A superior wear-resistant coating is provided for metallic magnetic recording layers (14), where the improved coating is a hard carbon layer (18) that is strongly bound to the underlying metallic magnetic recording layer by an intermediate layer of silicon (16). The silicon layer can be very thin, with a minimum thickness of a few atomic layers, and provides a strong adhesion between the hard carbon protective layer and the metallic magnetic recording layer (14). A preferred technique for depositing both the intermediate silicon (16) layer and the hard carbon layer (18) is plasma deposi­tion, since both of these depositions can be performed in the same reactor without breaking vacuum.

公开(公告)号：EP0697730B1

公开(公告)日：1999-11-24

申请号：EP95110478.5

申请日：1995-07-05

申请人： International Business Machines Corporation

发明人： Joshi, Rajiv Vasant ,  Tejwani, Manu Jamnadas ,  Srikrishnan, Kris Venkatraman

IPC分类号： H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76849 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53219 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12736 ,  Y10T428/1284 ,  Y10T428/12889 ,  Y10T428/12896 ,  H01L2924/00

公开(公告)号：EP0915501A1

公开(公告)日：1999-05-12

申请号：EP99101825.0

申请日：1995-07-05

申请人： International Business Machines Corporation

发明人： Joshi, Rajiv Vasant ,  Tejwani, Manu Jamnadas ,  Srikrishnan, Kris Venkatraman

IPC分类号： H01L21/321 ,  H01L21/768

CPC分类号： H01L21/76849 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53219 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12674 ,  Y10T428/12736 ,  Y10T428/1284 ,  Y10T428/12889 ,  Y10T428/12896 ,  H01L2924/00

摘要： A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH 4 gas followed by WF 6 can be used to produce an in-situ hard cap of W x Ge y . Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 °C) without degrading the underlying metals.

摘要翻译： 制造使用场效应晶体管（FET），双极晶体管或BiCMOS（组合双极/互补金属氧化物硅结构）的电路的结构和方法使用低温锗气流来影响以高纵横比结构沉积的金属和合金，包括 线和通孔。 通过使用锗气流，锗（Ge）将被引入到防止空隙和侧缝并且还提供CuGe钝化层的表面反应中。 如果需要硬帽来进行表面钝化或耐磨应用，则可以使用WF6之后的GeH4气体来生产WxGey的原位硬帽。 此外，可以通过利用低压和高温（即低于450℃）来填充高纵横比通孔/线（纵横比为3以上），而不会使下面的金属劣化。