摘要:
A chemically amplified radiation-sensitive resin composition comprising a specific copolymer and a photoacid generator, wherein the copolymer contains the following recurring unit (1) and/or the recurring unit (2), and the recurring unit (3-1), wherein R 1 is a hydrogen or methyl, R 2 is a C 4-10 tertiary alkyl, R 3 and R 4 are a hydrogen, C 1-12 alkyl, C 6-15 aromatic, C 1-12 alkoxyl, or R 3 and R 4 may form, in combination and together with the nitrogen atom with which the R 3 and R 4 groups bond, a C 3-15 cyclic structure, provided that R 3 and R 4 are not a hydrogen atom at the same time. The composition effectively responds to various radiations, exhibits excellent resolution and pattern configuration and minimal iso-dense bias, and can form fine patterns at a high precision and in a stable manner.
摘要:
A radiation-sensitive resin composition comprising (A) a resin which comprises a recurring unit (1) shown by the following formula (1) and either or both of a recurring unit (2) shown by the following formula (2) and a recurring unit (3) shown by the following formula (3), and (B) a photoacid generator shown by the following formula (4).
摘要:
A radiation-sensitive resin composition comprising: (A) an acid-dissociable group-containing resin, insoluble or scarcely soluble in alkali but becoming soluble in alkali when the acid-dissociable group dissociates, and containing recurring units with specific structures and (B) a photoacid generator of the formula (3), wherein R 5 represents a monovalent aromatic hydrocarbon group, m is 1-8, and n is 0-5. The resin composition is suitable as a chemically-amplified resist responsive to deep ultraviolet rays such as a KrF excimer laser and ArF excimer laser, exhibits high transparency, excellent resolution, dry etching resistance, and sensitivity, produces good pattern shapes, and well adheres to substrates.
摘要:
A radiation-sensitive resin composition comprising (A) a resin which comprises a recurring unit (1) shown by the following formula (1) and either or both of a recurring unit (2) shown by the following formula (2) and a recurring unit (3) shown by the following formula (3), and (B) a photoacid generator shown by the following formula (4).
摘要:
An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of α-position.
摘要:
A novel photoacid generator containg a structure of the following formula (I), wherein R is a monovalent organic group with a fluorine content of 50 wt% or less, a nitro group, a cyano group, or a hydrogen atom, and Z 1 and Z 2 are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.
摘要翻译:一种含有下式(I),的结构的新型光致酸发生剂,其中R是氟含量为50重量%以下的一价有机基团,硝基,氰基或氢原子,以及 Z 1和Z 2分别为氟原子或具有1-10个碳原子的直链或支链全氟烷基。 当用于化学放大的辐射敏感树脂组合物中时,光致酸产生剂显示出高透明度,较高的可燃性,并且没有生物累积性,并且产生在抗蚀剂涂层中显示高酸度,高沸点,适度短扩散长度的酸和低 对掩模图案密度的依赖。
摘要:
A radiation-sensitive resin composition comprising an acid-labile group-containing resin and a photoacid generator is disclosed. The resin has a structure of the formula (1), wherein R 1 represents a hydrogen atom, a monovalent acid-labile group, an alkyl group having 1-6 carbon atoms which does not have an acid-labile group, or an alkylcarbonyl group having 2-7 carbon atoms which does not have an acid-labile group, X 1 represents a linear or branched fluorinated alkyl group having 1-4 carbon atoms, and R 2 represents a hydrogen atom, a linear or branched alkyl group having 1-10 carbon atoms, or a linear or branched fluorinated alkyl group having 1-10 carbon atoms. The resin composition exhibits high transmittance of radiation, high sensitivity, resolution, and pattern shape, and is useful as a chemically amplified resist in producing semiconductors at a high yield.