利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.012 秒)

    VERTEILTER RESISTIVER MISCHER
    2.
    发明公开
    VERTEILTER RESISTIVER MISCHER 有权
    分布式电阻搅拌机

    公开(公告)号：EP2332250A2

    公开(公告)日：2011-06-15

    申请号：EP09782363.7

    申请日：2009-08-28

    申请人： Johann Wolfgang Goethe-Universität Frankfurt am Main ,  Bergische Universität Wuppertal

    发明人： PFEIFFER, Ullrich ,  OEJEFORS, Erik ,  ROSKOS, Hartmut G. ,  LISAUSKAS, Alvydas

    IPC分类号： H03D9/06

    CPC分类号： H03D7/125 ,  H03D1/18 ,  H03D9/0675 ,  H03D2200/0074

    摘要： The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal V
    RF . According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor C
    GD into the drain D of the field effect transistor FET, the gate G being biased with a direct voltage V
    g which corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion I
    ds which is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.

    MONOLITHISCH INTEGRIERTER ANTENNEN- UND EMPFÄNGERSCHALTKREIS FÜR DIE ERFASSUNG VON TERAHERTZ-WELLEN
    3.
    发明公开
    MONOLITHISCH INTEGRIERTER ANTENNEN- UND EMPFÄNGERSCHALTKREIS FÜR DIE ERFASSUNG VON TERAHERTZ-WELLEN 审中-公开
    单片机集成电路天线 - EMPFITHNGCHSCHALTKREISFÜRDIE ERFASSUNG VON TERAHERTZ-WELLEN

    公开(公告)号：EP2229695A2

    公开(公告)日：2010-09-22

    申请号：EP08865626.9

    申请日：2008-12-12

    申请人： Johann Wolfgang Goethe-Universität Frankfurt am Main ,  Universität Siegen

    发明人： ÖJEFORS, Erik ,  HARING BOLÍVAR, Peter ,  ROSKOS, Hartmut ,  PFEIFFER, Ullrich

    IPC分类号： H01L23/66 ,  G01N21/35 ,  H01L27/06 ,  H01L29/78 ,  H01L31/101 ,  H01Q9/26 ,  H01Q23/00 ,  H03F3/60

    CPC分类号： H01L23/66 ,  H01L27/0203 ,  H01L27/088 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01Q1/2283 ,  H01Q9/285 ,  H03F1/22 ,  H03F3/45282 ,  H03F3/601 ,  H03F2200/294 ,  H03F2203/45024 ,  H01L2924/00

    摘要： The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

    摘要翻译： 本发明涉及一种用于检测毫米波的装置，其具有至少一个具有源极，漏极，栅极，栅极 - 源极接触，源极 - 漏极沟道和栅极 - 漏极接触的场效应晶体管。 与类似的这种装置相比，本发明所解决的问题尤其在于提供一种能够提供用于检测Thz频率范围内的电磁辐射的功率和/或相位的场效应晶体管的装置。 为了创建这样的装置，根据本发明，提出了一种具有天线结构的装置，其中场效应晶体管以天线结构接收的电磁信号连接到天线结构 在THz范围内经由栅极 - 源极接触馈入场效应晶体管，并且其中场效应晶体管和天线结构一起布置在单个衬底上。