公开(公告)号：EP2787530B1

公开(公告)日：2018-08-08

申请号：EP13195139.4

申请日：2013-11-29

申请人： Kabushiki Kaisha Toshiba

发明人： Ikuma, Yoshiyuki ,  Suzuki, Masatoshi

IPC分类号： H01L23/045 ,  H01L23/10 ,  H01L23/20 ,  H01L23/48 ,  H01L23/552 ,  H01L23/66

CPC分类号： H01L23/10 ,  H01L23/045 ,  H01L23/20 ,  H01L23/552 ,  H01L23/66 ,  H01L24/73 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/06135 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/1515 ,  H01L2924/15153 ,  H01L2924/16152 ,  H01L2924/16172 ,  H01L2924/16176 ,  H01L2924/16195 ,  H01L2924/16251 ,  H01L2924/00012 ,  H01L2924/00

摘要： Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.

公开(公告)号：EP3065167A1

公开(公告)日：2016-09-07

申请号：EP15202391.7

申请日：2015-12-23

申请人： Kabushiki Kaisha Toshiba

发明人： Ikuma, Yoshiyuki ,  Suzuki, Masatoshi

IPC分类号： H01L23/04 ,  H01L23/66 ,  H01L23/552

CPC分类号： H04B1/036 ,  H01L23/057 ,  H01L23/142 ,  H01L23/3675 ,  H01L23/3677 ,  H01L23/4006 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2223/6644

摘要： A high-frequency module (10) according to an embodiment includes a first board (50), a first device (52), a second board (70), a metal core (55), and a casing (20). The first board is formed with an opening, and has a surface at a first side on which a transmission circuit transmitting microwaves is formed. The first device is disposed in the opening of the first board. The second substrate is disposed at a second side of the first board. The second substrate is formed with a control circuit for the first device, and has an opening at a location overlapping the first device. The metal core is disposed between the first board and the second board, and is in contact with the first device. The casing includes a connection (23) connected with the metal core via an opening formed in the second board.

摘要翻译： 根据实施例的高频模块（10）包括第一板（50），第一装置（52），第二板（70），金属芯（55）和壳体（20）。 第一板形成有开口，并且在第一侧具有形成有传输微波的传输电路的表面。 第一装置设置在第一板的开口中。 第二基板设置在第一板的第二侧。 第二基板形成有用于第一装置的控制电路，并且在与第一装置重叠的位置处具有开口。 金属芯设置在第一板和第二板之间，并与第一装置接触。 壳体包括通过形成在第二板中的开口与金属芯连接的连接件（23）。

公开(公告)号：EP2787530A1

公开(公告)日：2014-10-08

申请号：EP13195139.4

申请日：2013-11-29

申请人： Kabushiki Kaisha Toshiba

发明人： Ikuma, Yoshiyuki ,  Suzuki, Masatoshi

IPC分类号： H01L23/66 ,  H01L23/043 ,  H01L23/552

CPC分类号： H01L23/10 ,  H01L23/045 ,  H01L23/20 ,  H01L23/552 ,  H01L23/66 ,  H01L24/73 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/06135 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/1515 ,  H01L2924/15153 ,  H01L2924/16152 ,  H01L2924/16172 ,  H01L2924/16176 ,  H01L2924/16195 ,  H01L2924/16251 ,  H01L2924/00012 ,  H01L2924/00

摘要： Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.

摘要翻译： 某些实施例提供一种高频半导体封装，包括：由金属制成并且是接地部分的基座; 多层布线树脂基板; 第一内部导体膜; 和盖子。 多层布线树脂基板设置在基座的上表面上，并且具有框架形状，其中形成有暴露基部的顶表面的第一空腔。 第一内部导体膜覆盖形成多层布线树脂基板的顶表面的表面和第一腔的内壁表面，并与基底电连接。 将盖附接到多层布线树脂基板上，并密封并覆盖第一空腔。