摘要:
Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.
摘要:
An electric power semiconductor device includes a heat transfer plate (4) to which a heat radiation material (9) is adhered through an insulating layer (8), a printed wire board (3) that is disposed in such a way as to be spaced a predetermined gap apart from the heat transfer plate (4) and in the vicinity of an electrode strip (32) formed on the outer side of which, an opening portion (3a) is provided, a n electric power semiconductor element (2) that is disposed between the heat transfer plate (4) and the printed wire board (3) and whose rear side is adhered to the heat transfer plate (4), and a wiring member (5), one end of which is bonded to a first bonding portion of a main power electrode (21C) formed on the front side of the electric power semiconductor element (2) and the other end of which is bonded to a second bonding portion (32p); at least part of the second bonding portion (32p) is included in a space that extends from the main power electrode (21C) to the printed wire board (3) in the vertical direction, and the first bonding portion is included in a space that extends from the opening portion (3a) in the vertical direction.
摘要:
A open cavity semiconductor chip package that is leadless and does not have a metal lead frame as in conventional packages. The absence of a lead frame minimizes leakage paths and allows the novel package to be more readily fabricated as a hermetic package. A dual sided insulative or dielectric film is employed as the base interconnect between a semiconductor chip and outside contacts. Electrical connection from the top side of the film to the bottom side of the film is made through conductive micro-vias. The semiconductor chip is mounted on a paddle in a central opening in the film and wire bonded to pads on the film. After mounting of the chip, a cover or lid is attached to the film to encapsulate the assembly and maintain hermeticity of the package.
摘要:
Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.