Cathode with improved work function and method for making the same
    1.
    发明公开
    Cathode with improved work function and method for making the same 有权
    Kathode mit verbychoem Austrittspotential und Verfahren zur Herstellung derselben

    公开(公告)号:EP1063669A2

    公开(公告)日:2000-12-27

    申请号:EP00305015.0

    申请日:2000-06-13

    CPC classification number: H01J1/15 H01J9/042 H01J37/06 H01J2237/3175

    Abstract: A cathode with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer between a substrate and an emissive layer, where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

    Abstract translation: 一种具有改进的功函数的阴极(110),用于诸如SCALPEL“¢系统”的光刻系统,其包括在衬底(112)和发射层(116)之间的缓冲器(114),其中缓冲器 改变,随机化,小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸,随机化晶体取向并降低晶体生长速率。 缓冲层可以是固溶体或多相合金。 通过在衬底的表面和发射层之间沉积缓冲液来制造阴极的方法,其中沉积的缓冲液改变,随机化,小型化和/或隔离衬底表面处的晶粒结构以减小晶粒尺寸, 随机化晶体取向并降低晶体生长速率。

    Cathode with improved work function and method for making the same
    4.
    发明公开
    Cathode with improved work function and method for making the same 有权
    阴极具有改进的功函数,并产生相同的方法

    公开(公告)号:EP1063669A3

    公开(公告)日:2006-08-16

    申请号:EP00305015.0

    申请日:2000-06-13

    CPC classification number: H01J1/15 H01J9/042 H01J37/06 H01J2237/3175

    Abstract: A cathode (110) with an improved work function, for use in a lithographic system, such as the SCALPEL™ system, which includes a buffer (114) between a substrate (112) and an emissive layer (116), where the buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth. The buffer layer may be a solid solution or a multiphase alloy. A method of making the cathode by depositing a buffer between a surface of the substrate and an emissive layer, where the deposited buffer alters, randomizes, miniaturizes, and/or isolates the grain structure at a surface of the substrate to reduce the grain size, randomize crystal orientation and reduce the rate of crystal growth.

    Illumination system for electron beam lithography tool
    5.
    发明公开
    Illumination system for electron beam lithography tool 有权
    BeleuchtungsvorrichtungfürElektronenstrahl-Lithographiegeräte

    公开(公告)号:EP1091386A2

    公开(公告)日:2001-04-11

    申请号:EP00308685.7

    申请日:2000-10-03

    CPC classification number: H01J37/065 H01J37/12 H01J2237/1205 H01J2237/31774

    Abstract: A method and apparatus for controlling beam emittance by placing a lens array in a drift space of an illumination system component. The illumination system component may be an electron gun or a liner tube or drift tube, attachable to an electron gun. The lens array may be one or more mesh grids or a combination of grids and continuous foils. The lens array forms a multitude of microlenses resembling an optical "fly's eye" lens. The lens array splits an incoming solid electron beam into a multitude of subbeams, such that the outgoing beam emittance is different from the incoming beam emittance, while beam total current remains unchanged. The method and apparatus permit independent control of beam current and beam emittance, which is beneficial in a SCALPEL illumination system.

    Abstract translation: 一种通过将透镜阵列放置在照明系统部件的漂移空间中来控制光束发射的方法和装置。 照明系统部件可以是可附接到电子枪的电子枪或衬管或漂移管。 透镜阵列可以是一个或多个网状网格或网格和连续箔片的组合。 透镜阵列形成了类似于光学“飞眼”透镜的大量微透镜。 透镜阵列将输入的固体电子束分裂成多个子波束,使得输出光束发射不同于入射光束发射,而光束总电流保持不变。 该方法和装置允许独立控制束电流和光束发射,这在SCALPEL照明系统中是有益的。

    Electron guns for lithography tools
    7.
    发明公开
    Electron guns for lithography tools 有权
    ElektronenkanonefürLithographiegeräte

    公开(公告)号:EP1052678A3

    公开(公告)日:2006-07-05

    申请号:EP00303786.8

    申请日:2000-05-05

    CPC classification number: H01J37/065 H01J2237/31791

    Abstract: The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. The bias on the Wehnelt aperture (38) is reversed from the conventional bias so that it is biased positively with respect to the cathode. The Wehnelt opening is tapered with a disk emitter (36) inserted into the taper. The result of these modifications is an electron beam output with low brightness which is highly uniform over the beam cross section.

    Abstract translation: 本说明书描述了一种用于电子束光刻的方法和装置,其中修改了Wehnelt电子枪以改善电子束的均匀性。 Wehnelt孔径(38)上的偏置与常规偏压相反,使得它相对于阴极被正偏置。 Wehnelt开口呈锥形,盘形发射器(36)插入锥形。 这些修改的结果是具有低亮度的电子束输出,其在束横截面上是高度均匀的。

    Electron emitters for lithography tools
    8.
    发明公开
    Electron emitters for lithography tools 有权
    电子枪光刻设备

    公开(公告)号:EP1052677A3

    公开(公告)日:2006-06-07

    申请号:EP00303780.1

    申请日:2000-05-05

    CPC classification number: H01J37/065 H01J2237/3175 Y10S430/143

    Abstract: The specification describes a method and apparatus for electron beam lithography wherein a Wehnelt electron gun is modified to improve the uniformity of the electron beam. A mesh grid is applied to the Wehnelt aperture and the mesh grid functions as a multiple secondary emitter to produce a uniform beam flux over a wide area. The grid voltage of the modified gun is substantially lower than in a conventional Wehnelt gun, i.e. less than 100 volts, which can be switched conveniently and economically using semiconductor drive circuits.

    Electron beam imaging apparatus
    9.
    发明公开
    Electron beam imaging apparatus 审中-公开
    Elektronenstrahl-Abbildungsgerät

    公开(公告)号:EP1091383A3

    公开(公告)日:2005-01-19

    申请号:EP00302982.4

    申请日:2000-04-07

    Abstract: An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

    Abstract translation: 公开了一种用于投影光刻的装置。 该装置具有至少一个磁性双透镜。 孔径散射滤光片插入磁性双透镜透镜的两个透镜之间。 孔径散射滤光器位于磁性双透镜系统的后焦平面中或其等效的共轭平面中。 该装置还具有夹在磁性双透镜中的两个透镜之间的两个磁夹。 夹具被定位和构造成防止磁性透镜场的实质重叠。 这些磁性夹具被定位成使得磁性双透镜中的透镜的磁场不延伸到孔径散射滤光器。

    Electron beam imaging apparatus
    10.
    发明公开
    Electron beam imaging apparatus 审中-公开
    电子束成像装置

    公开(公告)号:EP1091383A2

    公开(公告)日:2001-04-11

    申请号:EP00302982.4

    申请日:2000-04-07

    Abstract: An apparatus for projection lithography is disclosed. The apparatus has at least one magnetic doublet lens. An aperture scatter filter is interposed between the two lenses of the magnetic doublet lens. The aperture scatter filter is in the back focal plane of the magnetic doublet lens system, or in an equivalent conjugate plane thereof. The apparatus also has two magnetic clamps interposed between the two lenses in the magnetic doublet lens. The clamps are positioned and configured to prevent substantial overlap of the magnetic lens fields. The magnetic clamps are positioned so that the magnetic fields from the lenses in the magnetic doublet lens do not extend to the aperture scatter filter.

    Abstract translation: 公开了一种用于投影光刻的设备。 该设备具有至少一个磁性双合透镜。 孔径散射滤光器插入在磁性双重透镜的两个透镜之间。 孔径散射滤波器位于磁性双合透镜系统的后焦面中,或位于其等效共轭平面中。 该设备还具有插入在磁性双合透镜中的两个透镜之间的两个磁性夹具。 夹具被定位和构造成防止磁透镜场的实质重叠。 磁性夹具的位置使得来自磁性双透镜中的透镜的磁场不会延伸到孔径散射滤波器。

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