公开(公告)号：EP2701178A2

公开(公告)日：2014-02-26

申请号：EP13179104.8

申请日：2003-10-30

申请人： Mapper Lithography IP B.V.

发明人： Van Veen, Alexander ,  Wieland, Marco ,  Kruit, Pieter ,  Kampherbeek, Bert Jan

IPC分类号： H01J3/02 ,  H01J37/06 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to an electron optical system for receiving a plurality of beamlets, comprising a first electrostatic lens array for focusing a plurality of beamlets; a modulation array comprising a plurality of modulators for modulating the intensity of the beamlets; a scan deflector array comprising a plurality of electrostatic scan deflectors for deflecting a portion of the beamlets in a predetermined direction; and a second electrostatic lens array for focusing the deflected beamlets.

摘要翻译： 本发明涉及一种用于接收多个子束的电子光学系统，包括用于聚焦多个子束的第一静电透镜阵列; 调制阵列，包括用于调制子束强度的多个调制器; 扫描偏转器阵列，包括用于沿预定方向偏转所述子束的一部分的多个静电扫描偏转器; 以及用于聚焦偏转的子束的第二静电透镜阵列。

公开(公告)号：EP1556881A2

公开(公告)日：2005-07-27

申请号：EP03809889.3

申请日：2003-10-30

申请人： MAPPER LITHOGRAPHY IP B.V.

发明人： Wieland, Marco Jan-Jaco ,  Kampherbeek, Bert Jan ,  Van Veen, Alexander Hendrik Vincent ,  KRUIT, Pieter

IPC分类号： H01J37/302 ,  H01J37/317 ,  H01J37/304 ,  G03F7/20

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target (14), comprising: a beamlet generator for generating a plurality of electron beamlets (5a, 5b); a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses (7) wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

公开(公告)号：EP2565902A3

公开(公告)日：2017-07-05

申请号：EP12188366.4

申请日：2003-10-30

申请人： MAPPER LITHOGRAPHY IP B.V.

发明人： Wieland, Marco Jan-Jaco ,  Kampherbeek, Bert Jan ,  Van Veen, Alexander Hendrik Vincent ,  Kruit, Pieter

IPC分类号： H01J37/302 ,  H01J37/317 ,  H01J37/304 ,  G03F7/20 ,  H01J37/06 ,  H01J3/02 ,  B82Y40/00 ,  B82Y10/00

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to a maskless lithography system for transferring a pattern onto the surface of a target. The system comprises a beamlet generator for generating a plurality of electron beamlets, a modulation array comprising a beamlet stop area and a beamlet blanker array comprising a beamlet blanking means for switching electron beamlets on and off, and, a focusing electron optical system, comprising at least one array of electrostatic lenses for focusing electron beamlets on said surface. The focusing optical system is adapted for maintaining the beamlets separate between the modulation array and the focusing electron optical system.

摘要翻译： 本发明涉及用于将图案转移到目标表面上的无掩模光刻系统。 该系统包括用于产生多个电子小射束的小射束发生器，包括小射束停止区的调制阵列和包括用于打开和关闭电子小射束的小射束消隐装置的小射束消隐器阵列，以及聚焦电子光学系统，包括在 至少一个静电透镜阵列，用于将电子小射束聚焦在所述表面上。 聚焦光学系统适用于保持调制阵列与聚焦电子光学系统之间的小射束分离。

公开(公告)号：EP2701178A3

公开(公告)日：2017-06-28

申请号：EP13179104.8

申请日：2003-10-30

申请人： Mapper Lithography IP B.V.

发明人： Van Veen, Alexander ,  Wieland, Marco ,  Kruit, Pieter ,  Kampherbeek, Bert Jan

IPC分类号： H01J3/02 ,  H01J37/06 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to an electron optical system for receiving a plurality of beamlets, comprising a first electrostatic lens array for focusing a plurality of beamlets; a modulation array comprising a plurality of modulators for modulating the intensity of the beamlets; a scan deflector array comprising a plurality of electrostatic scan deflectors for deflecting a portion of the beamlets in a predetermined direction; and a second electrostatic lens array for focusing the deflected beamlets.

摘要翻译： 本发明涉及一种用于接收多个小射束的电子光学系统，包括用于聚焦多个小射束的第一静电透镜阵列; 调制阵列，其包括用于调制子束的强度的多个调制器; 扫描偏转器阵列，其包括多个静电扫描偏转器，用于沿预定方向偏转一部分小射束; 以及用于聚焦偏转子束的第二静电透镜阵列。

公开(公告)号：EP2523207A3

公开(公告)日：2015-08-26

申请号：EP12179910.0

申请日：2003-10-30

申请人： Mapper Lithography IP B.V.

发明人： Wieland, Marco Jan-Jaco ,  Kampherbeek, Bert Jan ,  Van Veen, Alexander Hendrik Vincent ,  Kruit, Pieter

IPC分类号： H01J37/317 ,  H01J37/06 ,  H01J3/02 ,  B82Y40/00 ,  B82Y10/00

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to an electron beam generator for generating an electron beam, comprising an electron source and an extractor. The combination of electron source and extractor in use forms a negative lens, wherein said extractor has a positive voltage with respect to the source. The extractor and the electron source are positioned such that, in use, a space charge limited region is present between them. In an embodiment, the extractor is a planar extractor. In another embodiment, the source is a thermionic source.. The generator may comprise an illumination system for collimating the electron beam.

公开(公告)号：EP1556881B1

公开(公告)日：2013-08-28

申请号：EP03809889.3

申请日：2003-10-30

申请人： MAPPER LITHOGRAPHY IP B.V.

发明人： Wieland, Marco Jan-Jaco ,  Kampherbeek, Bert Jan ,  Van Veen, Alexander Hendrik Vincent ,  KRUIT, Pieter

IPC分类号： H01J37/302 ,  H01J37/317 ,  H01J37/304 ,  G03F7/20 ,  H01J37/06 ,  H01J3/02 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

公开(公告)号：EP2565902A2

公开(公告)日：2013-03-06

申请号：EP12188366.4

申请日：2003-10-30

申请人： MAPPER LITHOGRAPHY IP B.V.

发明人： Wieland, Marco Jan-Jaco ,  Kampherbeek, Bert Jan ,  Van Veen, Alexander Hendrik Vincent ,  Kruit, Pieter

IPC分类号： H01J37/302 ,  H01J37/317 ,  H01J37/304 ,  G03F7/20 ,  H01J37/06 ,  H01J3/02 ,  B82Y40/00 ,  B82Y10/00

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to a maskless lithography system for transferring a pattern onto the surface of a target. The system comprises a beamlet generator for generating a plurality of electron beamlets, a modulation array comprising a beamlet stop area and a beamlet blanker array comprising a beamlet blanking means for switching electron beamlets on and off, and, a focusing electron optical system, comprising at least one array of electrostatic lenses for focusing electron beamlets on said surface. The focusing optical system is adapted for maintaining the beamlets separate between the modulation array and the focusing electron optical system.

摘要翻译： 本发明涉及一种用于将图案转印到目标表面上的无掩模光刻系统。 该系统包括用于产生多个电子子束的子波发生器，包括子束停止区域的调制阵列和包括用于切换电子束的子束消隐装置的子束消隐器阵列，以及聚焦电子光学系统，包括： 用于在所述表面上聚焦电子束的至少一个静电透镜阵列。 聚焦光学系统适于将子束保持在调制阵列和聚焦电子光学系统之间。

公开(公告)号：EP2523207A2

公开(公告)日：2012-11-14

申请号：EP12179910.0

申请日：2003-10-30

申请人： Mapper Lithography IP B.V.

发明人： Wieland, Marco Jan-Jaco ,  Kampherbeek, Bert Jan ,  Van Veen, Alexander Hendrik Vincent ,  Kruit, Pieter

IPC分类号： H01J37/317 ,  H01J37/06 ,  H01J3/02

CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

摘要： The invention relates to an electron beam generator for generating an electron beam, comprising an electron source and an extractor. The combination of electron source and extractor in use forms a negative lens, wherein said extractor has a positive voltage with respect to the source. The extractor and the electron source are positioned such that, in use, a space charge limited region is present between them. In an embodiment, the extractor is a planar extractor. In another embodiment, the source is a thermionic source.. The generator may comprise an illumination system for collimating the electron beam.

摘要翻译： 本发明涉及一种用于产生电子束的电子束发生器，包括电子源和提取器。 使用的电子源和提取器的组合形成负透镜，其中所述提取器相对于源具有正电压。 提取器和电子源的定位使得在使用中存在空间电荷限制区域。 在一个实施例中，提取器是平面提取器。 在另一个实施例中，源是热离子源。发生器可以包括用于准直电子束的照明系统。