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    DEEP ULTRAVIOLET LED AND PRODUCTION METHOD THEREFOR
    1.
    发明公开
    DEEP ULTRAVIOLET LED AND PRODUCTION METHOD THEREFOR 审中-公开

    公开(公告)号：EP3249701A4

    公开(公告)日：2017-11-29

    申请号：EP16861100

    申请日：2016-11-01

    申请人： MARUBUN CO LTD ,  TOSHIBA MACHINE CO LTD ,  RIKEN ,  ULVAC INC ,  TOKYO OHKA KOGYO CO LTD

    发明人： KASHIMA YUKIO ,  MATSUURA ERIKO ,  KOKUBO MITSUNORI ,  TASHIRO TAKAHARU ,  HIRAYAMA HIDEKI ,  KAMIMURA RYUICHIRO ,  OSADA YAMATO ,  MORITA TOSHIRO

    IPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/40

    CPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/405

    摘要： The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength », and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength », one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer and the p-AlGaN layer such that the reflecting photonic crystal periodic structure does not extend beyond the p-AlGaN layer in a direction of the substrate. Maximum light extraction efficiency is obtained when a distance from end faces of the voids in the direction of the substrate to the quantum well layer is greater than or equal to a total thickness of the barrier layer and the multi-quantum barrier layer (or the electron blocking layer) and less than or equal to 80 nm, and a depth h of each void is less than or equal to a total thickness of the p-AlGaN layer and the p-GaN contact layer. The reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components. A period a of the photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength ». An order m in a formula of the Bragg condition satisfies 1‰¤m‰¤5. Provided that a radius of each void is R, R/a with which the photonic band gap becomes maximum is satisfied.

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD
    2.
    发明公开
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD 有权
    HERSTELLUNGSVERFAHREN公司的HILLBLEITERELEMENT

    公开(公告)号：EP2955762A4

    公开(公告)日：2016-01-20

    申请号：EP14826471

    申请日：2014-07-16

    申请人： MARUBUN CO LTD ,  TOSHIBA MACHINE CO LTD ,  RIKEN ,  NAT INST OF ADVANCED IND SCIEN ,  ULVAC INC ,  TOKYO OHKA KOGYO CO LTD

    发明人： KASHIMA YUKIO ,  MATSUURA ERIKO ,  KOKUBO MITSUNORI ,  TASHIRO TAKAHARU ,  OOKAWA TAKAFUMI ,  HIRAYAMA HIDEKI ,  YOUN SUNG WON ,  TAKAGI HIDEKI ,  KAMIMURA RYUICHIRO ,  OSADA YAMATO ,  SHIMATANI SATOSHI

    IPC分类号： H01L33/22

    CPC分类号： G06F17/5009 ,  G06F17/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0083

    摘要： A semiconductor light emitting element with a design wavelength of », comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength » satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength » becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

    摘要翻译： 具有设计波长»的半导体发光元件，包括在形成发光元件的层之间的一个或多个界面的每一个处具有两个具有不同折射率的结构的光子晶体周期性结构。 作为一个或多个周期结构和设计波长中的每一个的参数的周期a和半径R满足布拉格条件。 周期a和半径R之间的比率（R / a）是确定的，使得对于每个周期性结构，TE光的预定光子带隙（PBG）变得最大。 确定每个周期结构的参数，使得整个半导体发光元件相对于波长λ的光的光提取效率变得最大，作为使用FDTD方法进行模拟分析的结果，使用作为变量的深度h 大于或等于0.5a的周期性结构以及针对布拉格条件的每个阶m确定的周期a和半径R.

    NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
    7.
    发明公开
    NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
    NITRID-HALBLEITER-LICHTEMISSIONSELEMENT

    公开(公告)号：EP2270879A4

    公开(公告)日：2013-08-07

    申请号：EP09724676

    申请日：2009-03-23

    申请人： PANASONIC CORP ,  RIKEN

    发明人： TAKANO TAKAYOSHI ,  TSUBAKI KENJI ,  HIRAYAMA HIDEKI ,  FUJIKAWA SACHIE

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

    CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

    摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6 , and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1 . The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6 . This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

    摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导电层7.第一缓冲层2层压到单晶衬底1的顶侧。 n型氮化物半导体层3层叠在第一缓冲层2的上侧。第三缓冲层5与第二缓冲层层叠在n型氮化物半导体层3的顶面 4插入其间。 发光层6被层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 用于发光层6的生长的基底，以便减少发光层6中的穿透位错和残留变形。 该氮化物半导体发光器件通过利用在第三缓冲层5中产生的载流子来减少发光层中的压电场。第三缓冲层5掺杂有用作供体的Si杂质。

    QUANTUM CASCADE LASER ELEMENT
    10.
    发明公开
    QUANTUM CASCADE LASER ELEMENT 审中-公开
    量子级联激光器元

    公开(公告)号：EP2747221A4

    公开(公告)日：2015-07-22

    申请号：EP12819292

    申请日：2012-08-01

    申请人： RIKEN

    发明人： HIRAYAMA HIDEKI ,  LIN TSUNG-TSE

    IPC分类号： H01S5/34 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/02

    CPC分类号： H01S5/3401 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0035 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/3402 ,  H01S2302/02

    摘要： [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (J th ) and an increased maximum operating temperature (T max ). [SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of Al x Ga 1-x As (where 0