Abstract:
A method of manufacturing a boundary acoustic wave device with less frequency variation. First to third media (1 to 3) are formed sequentially in this order. An electrode (5) is disposed at the boundary between the first and second media (1, 2). In the method, a multilayer body in which the first and second media (1, 2) are formed and the electrode (5) is disposed at the boundary between the first and second media (1, 2) is prepared, the thickness of the second medium (2) is adjusted at the stage of the multilayer body to regulate the frequency or sound velocity of a surface acoustic wave, pseudo-boundary acoustic wave, or a boundary acoustic wave, and after the regulation the third medium (3) having a sound velocity of the boundary acoustic wave and/or a material different from that of the second medium is formed.
Abstract:
There is provided an acoustic wave element that enables an improvement of resonance characteristics at the vicinity of a resonance frequency and that prevents short-circuit failure between electrode fingers and degradation in insulation properties. In an acoustic wave element (1), an IDT electrode (3) is in contact with a piezoelectric material. The IDT electrode (3) includes a plurality of electrode fingers. The plurality of electrode fingers include first and second electrode fingers (31 and 32) that adjoin each other in an acoustic wave propagation direction and that connect to different potentials and a first dummy electrode finger (34) facing the first electrode finger (31) via a gap (33) placed on an outer side in an electrode finger length direction of the first electrode finger (31). At the vicinity of the gap, first protrusions (11 to 14) are provided in at least one of the first electrode finger (31) and the first dummy electrode finger (34), the first protrusion protruding in the acoustic wave propagation direction from at least one of side edges of the electrode finger.
Abstract:
An elastic wave device having enhanced resonance characteristics and filter characteristics is provided. At least one IDT electrode (3) is provided on a piezoelectric substrate. The at least one IDT electrode (3) is arranged next to each other in a propagation direction of elastic wave. The elastic wave device has first and second electrode fingers (31, 32). The side edges of at least the electrode finger (32) of the first and second electrode fingers (31, 32) are provided with projections (13, 14). The position of the projections (13, 14) in the longitudinal direction of the electrode fingers substantially corresponds with the position of a gap (33) in the longitudinal direction of the electrode fingers, the gap (33) being provided at the tip end of the electrode finger (31) of the first and second electrode fingers.
Abstract:
An elastic boundary wave device employing an SH type elastic boundary wave having a large electromechanical coupling coefficient, a low propagation loss, a small power flow angle, a temperature coefficient of frequency TCF in an appropriate range, and a simple structure which can be produced through a simple process. A dielectric is deposited on one side of a piezoelectric and an IDT and a reflector are arranged as electrodes on the boundary of the piezoelectric and the dielectric, wherein the thickness of the electrodes is set such that the sound velocity of the SH type elastic boundary wave becomes lower than the sound velocity of a slow transverse wave propagating through the dielectric and the sound velocity of a slow transverse wave propagating through the piezoelectric.