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    A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same
    2.
    发明公开
    A novel capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same 有权
    用于磁隧道结器件的新罩面层为的dR / R及其制造方法的加强

    公开(公告)号：EP1885006A1

    公开(公告)日：2008-02-06

    申请号：EP07392004.3

    申请日：2007-07-30

    申请人： MagIC Technologies Inc.

    发明人： Horng, Cheng T. ,  Tong, Ru-Ying

    IPC分类号： H01L43/08 ,  H01L43/12 ,  H01F10/32 ,  G11B5/39 ,  G11C11/15

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11C11/161 ,  G11C11/1673 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle layer, and a Ru outer layer on the Ta layer. For example, a low magnetization NiFeHf layer is achieved by co-sputtering NiFe and Hf targets with a forward power of 400W and 200W, respectively. A higher Hf content increases the oxygen gettering power of the NiFeHf layer and the thickness is modified to change dR/R, RA, and magnetostriction values. A so-called dead layer between the free layer and capping layer is substantially reduced by incorporating a NiFeHf layer on the free layer to improve lattice matching. The Fe content in the NiFe target used to make the NiFeHf layer is preferably the same as in the NiFe free layer.

    摘要翻译： 在到MRAM阵列或TMR的MTJ读出磁头被盘游离缺失其中低磁化覆盖层是具有在所形成的一个NiFe或的CoFeB /的NiFe自由层，Ta中间层上的NiFeHf内层，和由Ru外层的复合 Ta层。 对于实施例，低磁化NiFeHf层通过共溅射的NiFe和Hf靶与400W和200W的行波功率分别实现。 较高的HF含量增加NiFeHf层的氧吸杂能力和厚度被修改以改变的dR / R，RA，和磁致伸缩值。 自由层和覆盖层之间的所谓的死层基本上由在自由层上引入一个NiFeHf层以改善晶格匹配降低。 在用于制备NiFeHf层的镍铁靶中的Fe含量优选为相同于由NiFe自由层。

    A high performance MTJ element for STT-RAM and method for making the same
    6.
    发明公开
    A high performance MTJ element for STT-RAM and method for making the same 有权
    Hochleistungs-MTJ-ElementfürSTT-RAM und Herstellungsverfahrendafür

    公开(公告)号：EP2073285A2

    公开(公告)日：2009-06-24

    申请号：EP08392010.8

    申请日：2008-07-09

    申请人： MagIC Technologies Inc.

    发明人： Horng, Cheng T. ,  Tong, Ru-Ying ,  Torng, Chyu-Jiuh ,  Kula, Witold

    IPC分类号： H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

    摘要： We describe the structure and method of forming a STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that comprises an amorphous layer of Co 60 Fe 20 B 20 .of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

    摘要翻译： 我们描述了形成使用自旋角动量转移作为改变自由层的磁矩方向的机制的STT-MTJ MRAM单元的结构和方法。 该装置包括形成在钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层（2），SyAP钉扎层（345），天然氧化的结晶MgO隧道势垒层（6），并且在一个 实施例中，自由层（7）包括分别在3和6埃厚度的Fe的两个结晶层（71,73）之间形成的约20埃厚度的Co 60 Fe 20 B 20的非晶层（72）。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。