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    FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS
    4.
    发明公开
    FULLY COMPENSATED SYNTHETIC ANTIFERROMAGNET FOR SPINTRONICS APPLICATIONS 审中-公开
    完全补偿合成反FERRO磁铁自旋电子学

    公开(公告)号：EP2987190A1

    公开(公告)日：2016-02-24

    申请号：EP14725313.2

    申请日：2014-04-14

    申请人： Headway Technologies, Inc.

    发明人： JAN, Guenole ,  TONG, Ru-Ying

    IPC分类号： H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/12

    CPC分类号： H01L43/10 ,  H01F10/30 ,  H01F10/32 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    摘要： A synthetic antiferromagnet serving as a reference layer for a magnetic tunnel junction is a laminate with a plurality of “x+1” magnetic sub-layers and “x” non-magnetic spacers arranged in an alternating fashion, with a magnetic sub-layer at the top and bottom of the laminated stack. Each spacer has a top and bottom surfaces that interface with adjoining magnetic sub-layers generating antiferromagnetic coupling between the adjoining sub-layers. Perpendicular magnetic anisotropy is induced in each magnetic sub-layer through an interface with a spacer. Thus the dipole field exerted on a free layer is substantially reduced compared with that produced by a conventional synthetic antiferromagnetic reference layer. Magnetic sub-layers are preferably Co while Ru, Rh, or Ir may serve as non-magnetic spacers.

    MULTILAYER STRUCTURE FILM AND PROCESS FOR PRODUCING THE SAME
    7.
    发明公开
    MULTILAYER STRUCTURE FILM AND PROCESS FOR PRODUCING THE SAME 有权
    多层结构膜和工艺及其生产

    公开(公告)号：EP1553565A4

    公开(公告)日：2005-10-12

    申请号：EP03816161

    申请日：2003-03-05

    申请人： FUJITSU LTD

    发明人： MUKAI RYOICHI

    IPC分类号： G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/73 ,  G11B5/738 ,  G11B5/84 ,  G11B5/851 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32

    CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/66 ,  G11B5/84 ,  H01F10/30

    摘要： A multilayer structure film comprising first base crystal layer (33) composed of crystal grains adjacent to each other and second base crystal layer (34) whose thickness is greater than that of the first base crystal layer (33), extending over the upper surface of the first base crystal layer (33). The second base crystal layer (34) is composed of crystal grains having grown from individual crystal grains of the first base crystal layer (33). In the first and second base crystal layers (33, 35), fine uniform crystal grains are established. Moreover, in the first and second base crystal layers (33, 35), satisfactory layer thickness can be ensured. The multilayer structure film further comprises first and second magnetic crystal layers (35, 36) wherein fine uniform crystal grains are established. Moreover, in the first and second magnetic crystal layers (35, 36), satisfactory layer thickness can be ensured.

    MULTILAYER STRUCTURE FILM AND PROCESS FOR PRODUCING THE SAME
    8.
    发明公开
    MULTILAYER STRUCTURE FILM AND PROCESS FOR PRODUCING THE SAME 有权
    Magnetisches Aufzeichnungsmedium und Verfahren zu seiner Herstellung

    公开(公告)号：EP1553565A1

    公开(公告)日：2005-07-13

    申请号：EP03816161.8

    申请日：2003-03-05

    申请人： FUJITSU LIMITED

    发明人： MUKAI, Ryoichi, c/o Fujitsu Limited

    IPC分类号： G11B5/851 ,  G11B5/84 ,  G11B5/738 ,  G11B5/65 ,  G11B5/66

    CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/66 ,  G11B5/84 ,  H01F10/30

    摘要： A firs polycrystalline underlayer (33) is made of crystal grains adjacent each other. A second polycrystalline layer (34) extends on the surface of the first polycrystalline layer (33) by a thickness larger than that of the first polycrystalline layer (33). The second polycrystalline layer (34) is made of crystal grains growing from the individual crystal grains in the first polycrystalline underlayer (33). Fine and uniform crystal grains can be established in the first and second polycrystalline layers (33, 35). In addition, the first and second polycrystalline layers (33, 35) are allowed to have a sufficient thickness. Fine and uniform crystal grains are likewise established in first and second magnetic polycrystalline layers (35, 36). The first and second magnetic polycrystalline layers (35, 36) are allowed to have a sufficient thickness.

    摘要翻译： 最初的多晶底层（33）由彼此相邻的晶粒制成。 第二多晶层（34）在第一多晶层（33）的表面上延伸的厚度大于第一多晶层（33）的厚度。 第二多晶层（34）由在第一多晶底层（33）中的各晶粒生长的晶粒构成。 可以在第一和第二多晶层（33,35）中形成精细均匀的晶粒。 此外，允许第​​一和第二多晶层（33,35）具有足够的厚度。 在第一和第二磁性多晶层（35,36）中同样建立细小且均匀的晶粒。 允许第一和第二磁性多晶层（35,36）具有足够的厚度。