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    MAGNETIC TUNNEL JUNCTIONS
    4.
    发明公开
    MAGNETIC TUNNEL JUNCTIONS 审中-公开
    磁隧道结

    公开(公告)号：EP3284116A1

    公开(公告)日：2018-02-21

    申请号：EP16780409.5

    申请日：2016-02-16

    Applicant: Micron Technology, Inc.

    Inventor： SIDDIK, Manzar ,  KULA, Witold ,  SANDHU, Gurtej S.

    IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

    Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.

    MAGNETIC TUNNEL JUNCTIONS AND METHODS OF FORMING MAGNETIC TUNNEL JUNCTIONS
    5.
    发明公开
    MAGNETIC TUNNEL JUNCTIONS AND METHODS OF FORMING MAGNETIC TUNNEL JUNCTIONS 审中-公开
    维多利亚州吉尔吉斯斯坦

    公开(公告)号：EP3044815A1

    公开(公告)日：2016-07-20

    申请号：EP14843477.2

    申请日：2014-07-22

    Applicant: Micron Technology, Inc.

    Inventor： SANDHU, Gurtej S.

    IPC: H01L43/08 ,  G11C11/15

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: A method of forming a line of magnetic tunnel junctions includes forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material. The substrate has alternating outer regions of reactant source material and insulator material along at least one cross-section. The reference material is patterned into a longitudinally elongated line passing over the alternating outer regions. The recording material is subjected to a set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along the line and to form magnetic tunnel junctions along the line which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions. Other methods, and lines of magnetic tunnel junctions independent of method, are disclosed.

    Abstract translation: 一种形成磁性隧道结的线的方法包括在基底上形成磁记录材料，在记录材料上形成非磁性材料，以及在非磁性材料上形成磁性参考材料。 衬底沿着至少一个横截面具有反应物源材料和绝缘体材料的交替的外部区域。 参考材料被图案化成穿过交替的外部区域的纵向细长线。 记录材料经受一组温度和压力条件以与反应物源材料的反应物反应以形成电介质材料的区域，该区域沿着该线沿着与记录材料纵向交替并形成沿着该线的磁性隧道结， 单独地包括在电介质材料区域之间纵向的记录材料，非磁性材料和参考材料。 公开了其他方法和与方法无关的磁隧道结线。

    MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION
    6.
    发明公开
    MEMORY CELLS, SEMICONDUCTOR DEVICE STRUCTURES, MEMORY SYSTEMS, AND METHODS OF FABRICATION 审中-公开
    存储器单元，半导体器件结构，存储器系统和制造方法

    公开(公告)号：EP2862172A1

    公开(公告)日：2015-04-22

    申请号：EP13807860.5

    申请日：2013-06-06

    Applicant: Micron Technology, Inc.

    Inventor： KULA, Witold ,  SANDHU, Gurtej S. ,  KRAMER, Stephen J.

    IPC: G11C11/15 ,  H01L21/8247 ,  H01L27/115

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress compensating material,
    e.g ., a non sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress compensated precursor structure in a net beneficial stress state. Thereafter, the stress compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT MRAM) systems.

    Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上无应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 应力补偿材料（例如非牺牲导电材料）形成为设置在原始前体结构上以形成净有益应力状态下的应力补偿前体结构。 之后，应力补偿的前体结构可以被图案化以形成存储器单元的单元核心。 应力补偿前体结构的净有益应力状态促成在电池芯中形成一个或多个磁性区域，其呈现垂直磁取向而不会使一个或多个磁性区域的磁性强度恶化。 还公开了存储器单元，存储器单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT MRAM）系统。

    INTEGRATED CIRCUITRY COMPONENTS, SWITCHES, AND MEMORY CELLS
    8.
    发明公开
    INTEGRATED CIRCUITRY COMPONENTS, SWITCHES, AND MEMORY CELLS 审中-公开

    公开(公告)号：EP3971977A1

    公开(公告)日：2022-03-23

    申请号：EP21205614.7

    申请日：2013-01-23

    Applicant: Micron Technology, Inc.

    Inventor： SANDHU, Gurtej S.

    IPC: H01L27/115 ,  H01L29/778 ,  G11C11/22 ,  H01L27/1159 ,  H01L29/51 ,  H01L29/16

    Abstract: A switch comprising: a graphene structure (24) extending longitudinally between a pair of electrodes (16, 18) and being conductively connected to both electrodes of said pair; first and second electrically conductive structures (26, 28) laterally outward of the graphene structure and on opposing sides of the graphene structure from one another; and ferroelectric material (31) laterally between the graphene structure and at least one of the first and second electrically conductive structures, the first and second electrically conductive structures being configured to provide the switch into "on" and "off' states by application of an electric field (EF) across the graphene structure and the ferroelectric material.

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