WAVEGUIDE CONNECTION STRUCTURE
    2.
    发明公开
    WAVEGUIDE CONNECTION STRUCTURE 有权
    WELLENLEITERVERBINDUNGSSTRUKTUR

    公开(公告)号:EP2079127A1

    公开(公告)日:2009-07-15

    申请号:EP07830850.9

    申请日:2007-10-30

    发明人: SUZUKI, Takuya

    IPC分类号: H01P1/04

    CPC分类号: H01P1/042 H01P3/121

    摘要: There is provided a waveguide connection structure for connecting a waveguide 2 formed on a multilayer dielectric substrate 1 and a waveguide 4 formed on a metal substrate 3. The waveguide connection structure includes a choke structure having a rectangular conductor pattern 7, a conductor opening 8, and a dielectric transmission path 9. The rectangular conductor pattern 7 is formed around the waveguide 2 in the multilayer dielectric substrate 1, and has a dimension of about λ/4 (λ: a free-space wavelength of a signal wave) from an E-side edge of the waveguide 2. The conductor opening 8 is formed at a predetermined position on the conductor pattern 7 between the end of the conductor pattern 7 and the E-side edge of the waveguide 2. The dielectric transmission path 9 is connected to the conductor opening 8, and is formed in the multilayer dielectric substrate in the layer direction to have a length of about λg/4 (λg: an in-substrate effective wavelength of the signal wave) with a closed end. Even when a gap is formed between the multilayer dielectric substrate and the metal substrate, it is possible to achieve the connection characteristics of the waveguides with lower leakage and lower loss of signals at the connection area of the waveguides, and to prevent the degradation of the connection characteristics that occurs due to the resonance in the higher order mode when the waveguides are misaligned.

    摘要翻译: 提供了一种用于连接形成在多层电介质基板1上的波导2和形成在金属基板3上的波导4的波导连接结构。波导连接结构包括具有矩形导体图案7的导体开口8, 和电介质传输路径9.矩形导体图案7围绕多层电介质基板1中的波导2形成,并且具有与E相关的大约»/ 4(»:信号波的自由空间波长)的尺寸 导体开口8形成在导体图案7的端部和波导2的E侧边缘之间的导体图案7上的预定位置处。电介质传输路径9连接到 导体开口8,并且在层状方向上在多层电介质基板中形成为具有约»g / 4(»g:信号波的衬底内有效波长)的长度与cl 结束了。 即使在多层电介质基板和金属基板之间形成间隙的情况下,也可以实现在波导的连接区域具有较低的泄漏和较低的信号损耗的波导的连接特性,并且防止 当波导不对准时,由于高阶模式下的谐振而发生的连接特性。

    HIGH-FREQUENCY CIRCUIT PACKAGE, AND SENSOR MODULE
    4.
    发明公开
    HIGH-FREQUENCY CIRCUIT PACKAGE, AND SENSOR MODULE 有权
    HOCHFREQUENZSCHALTUNGSGEHÄUSEUND SENSORMODUL

    公开(公告)号:EP2333828A1

    公开(公告)日:2011-06-15

    申请号:EP09811515.7

    申请日:2009-09-02

    发明人: SUZUKI, Takuya

    IPC分类号: H01L23/12 H01P5/107 H01P11/00

    摘要: Shielding of high-frequency circuits is achieved using a simple and inexpensive configuration not using any lid. A high-frequency circuit mounting substrate (20) is disposed, on an underside surface layer of which are disposed high-frequency circuits (21 and 22) and is formed a first grounding conductor that has same electric potential as grounding conductors of the high-frequency circuits and that surrounds the high-frequency circuits. A mother control substrate (3) is disposed, on which the high-frequency circuit mounting substrate (20) is mounted in such a way that the high-frequency circuits are sandwiched therebetween and on which a second grounding conductor is formed in a region facing the high-frequency circuits. Plural first lands are formed on the first grounding conductor of the high-frequency circuit mounting substrate (20) to surround the high-frequency circuits. Plural second lands are formed that are electrically connected to the second grounding conductor at positions on a surface layer of the mother control substrate (3) which face the first lands. Plural solder balls (30G2) are disposed for connecting the first lands and the second lands. The high-frequency circuits are housed in pseudo shielding cavities surrounded by the solder balls (30G2), the grounding conductors of the high-frequency circuits, and the first and second grounding conductors.

    摘要翻译: 使用不使用任何盖子的简单且便宜的配置来实现高频电路的屏蔽。 高频电路安装基板(20)设置在其下表面层上,设置有高频电路(21和22),并且形成为与高频电路(21,22)的接地导体具有相同电位的第一接地导体, 频率电路,并且围绕高频电路。 设置母控制基板(3),高频电路安装基板(20)以这样的方式被安装,使得高频电路夹在其间并在其上形成有第二接地导体的区域 高频电路。 多个第一焊盘形成在高频电路安装基板(20)的第一接地导体上,以围绕高频电路。 在与母板控制基板(3)的面对第一焊盘的表面层的位置形成有与第二接地导体电连接的多个第二焊盘。 多个焊球(30G2)被设置用于连接第一焊盘和第二焊盘。 高频电路容纳在由焊球(30G2),高频电路的接地导体以及第一和第二接地导体围绕的伪屏蔽腔中。

    EVEN HARMONIC MIXER
    5.
    发明公开
    EVEN HARMONIC MIXER 有权
    MISCHERFÜRGERADE OBERSCHWINGUNGEN

    公开(公告)号:EP2151919A1

    公开(公告)日:2010-02-10

    申请号:EP07742380.4

    申请日:2007-04-25

    IPC分类号: H03D7/02

    CPC分类号: H03D9/0633 H03D7/02

    摘要: Provided is an even harmonic mixer which is reduced in cost and size. The even harmonic mixer includes: a transducer in which a conductor of a microstrip line is connected to a ground plane of a waveguide, for transducing an RF signal transmitted in a waveguide mode into a transmission mode of the microstrip line; an anti-parallel diode pair which is cascade-connected to a microstrip line side of the transducer, and formed on a semiconductor substrate; a branching circuit for branching an LO signal and an IF signal; an open-end stub which is disposed between the transducer and the anti-parallel diode pair, and has a line length of about 1/2 wavelength at an RF signal frequency; and an open-end stub which is disposed between the anti-parallel diode pair and the branching circuit, and has a line length of about 1/4 wavelength at the RF signal frequency.

    摘要翻译: 提供了一种降低成本和尺寸的均匀谐波混合器。 所述均匀谐波混频器包括:传感器,其中微带线的导体连接到波导的接地平面,用于将以波导模式传输的RF信号转换为微带线的传输模式; 反并联二极管对,其级联连接到换能器的微带线侧,并形成在半导体衬底上; 用于分支LO信号和IF信号的分支电路; 设置在换能器和反并联二极管对之间的开路短截线,并且在RF信号频率处具有约1/2波长的线路长度; 以及设置在反并联二极管对和分支电路之间的开路短截线,并且在RF信号频率处具有约1/4波长的线路长度。

    HIGH-FREQUENCY CIRCUIT PACKAGE AND SENSOR MODULE

    公开(公告)号:EP3598484A1

    公开(公告)日:2020-01-22

    申请号:EP19197339.5

    申请日:2009-09-02

    发明人: SUZUKI, Takuya

    摘要: Shielding of high-frequency circuits is achieved using a simple and inexpensive configuration not using any lid. A high-frequency circuit mounting substrate (20) is disposed, on an underside surface layer of which are disposed high-frequency circuits (21 and 22) and is formed a first grounding conductor that has same electric potential as grounding conductors of the high-frequency circuits and that surrounds the high-frequency circuits. A mother control substrate (3) is disposed, on which the high-frequency circuit mounting substrate (20) is mounted in such a way that the high-frequency circuits are sandwiched therebetween and on which a second grounding conductor is formed in a region facing the high-frequency circuits. Plural first lands are formed on the first grounding conductor of the high-frequency circuit mounting substrate (20) to surround the high-frequency circuits. Plural second lands are formed that are electrically connected to the second grounding conductor at positions on a surface layer of the mother control substrate (3) which face the first lands. Plural solder balls (30G2) are disposed for connecting the first lands and the second lands. The high-frequency circuits are housed in pseudo shielding cavities surrounded by the solder balls (30G2), the grounding conductors of the high-frequency circuits, and the first and second grounding conductors.

    HIGH-FREQUENCY PACKAGE
    9.
    发明公开
    HIGH-FREQUENCY PACKAGE 审中-公开
    高频封装

    公开(公告)号:EP2698819A1

    公开(公告)日:2014-02-19

    申请号:EP12771789.0

    申请日:2012-01-31

    IPC分类号: H01L23/02 H01L23/04

    摘要: A high-frequency package 100 in the embodiment includes a first dielectric substrate 10 having a signal line and a grounding conductor 30 provided on a back side, a high-frequency element 20 connected to a back side of the first dielectric substrate with a first connection conductor 40 therebetween, a second dielectric substrate 11 having a signal line and a grounding conductor 30 provided on a front side facing the back side with the high-frequency element therebetween, and second connection conductors 41 that are arranged so as to surround the high-frequency element and connect the grounding conductor on the back side of the first dielectric substrate and the grounding conductor on the front side of the second dielectric substrate. In the high-frequency package 100 in the embodiment, a dielectric space 60 surrounded by a conductor pattern is formed in the front side of the second dielectric substrate under the high-frequency element.