公开(公告)号：EP2056456A1

公开(公告)日：2009-05-06

申请号：EP07828226.6

申请日：2007-09-10

申请人： Murata Manufacturing Co. Ltd.

发明人： KADOTA, Michio ,  KIMURA, Tetsuya

IPC分类号： H03H9/145 ,  H01L41/09 ,  H01L41/18 ,  H03H9/25

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

摘要： A boundary acoustic wave device using a boundary acoustic wave propagating between a dielectric layer and LiNbO 3 or LiTaO 3 is provided. Although the boundary acoustic wave device includes a thin electrode layer, the boundary acoustic wave device has low loss using an SH-type boundary acoustic wave. A boundary acoustic wave device (1) includes a LiNbO 3 substrate (1) having a plurality of grooves (1b) formed in the upper surface thereof; electrode layers (3) which are formed by filling the grooves (1b) with a metal material and which include IDT electrodes; and a dielectric layer (4), such as a SiO 2 layer, formed over the upper surface (1b) of the piezoelectric substrate (1) and the electrodes (3). The upper surface of the dielectric layer (4) is flat. The thickness of the electrodes (3), θ of the Euler angles (0°, θ, -45° to +45°) of the LiNbO 3 substrate, and the thickness of the dielectric layer (4) are within any of ranges shown in Table 1 below:


[Table 1]







α≤0.1
θ of Euler angles (0°, θ, -45° to 45°)



0.04≤Thickness of first group electrode
(0, 76 to 106, -45 to 45)
0.8≤Thickness of dielectric layer≤2.5

0.07≤Thickness of first group electrode
(0, 66 to 116, -45 to 45)
0.8≤Thickness of dielectric layer≤2.5

0.1≤Thickness of first group electrode≤0.2
(0, 56 to 125, -45 to 45)
0.8≤Thickness of dielectric layer≤2.5

0.01≤Thickness of second group electrode
(0, 71 to 101, -45 to 45)
0.8≤Thickness of dielectric layer≤3.0

0.02≤Thickness of second group electrode
(0, 68 to 103, -45 to 45)
0.8≤Thickness of dielectric layer≤3.0

0.06≤Thickness of second group electrode
(0, 66 to 109, -45 to 45)
0.8≤Thickness of dielectric layer≤3.0

0.08≤Thickness of second group electrode≤0.16
(0, 61 to 123, -45 to 45)
0.8≤Thickness of dielectric layer≤3.0

0.01≤Thickness of third group electrode
(0, 61 to 112, -45 to 45)
0.8≤Thickness of dielectric layer≤4.0

0.02≤Thickness of third group electrode
(0, 60 to 122, -45 to 45)
0.8≤Thickness of dielectric layer≤4.0

0.06≤Thickness of third group electrode
(0, 56 to 132, -45 to 45)
0.8≤Thickness of dielectric layer≤4.0

0.08≤Thickness of third group electrode≤0.10
(0, 51 to 136, -45 to 45)
0.8≤Thickness of dielectric layer≤4.0






The thickness of each electrode and the thickness of a dielectric layer are normalized thickness H/λ (λ is the wavelength of a boundary acoustic wave).

摘要翻译： 提供了使用在介电层和LiNbO 3或LiTaO 3之间传播的声界面波的弹性边界波装置。 弹性边界波装置虽然包括薄电极层，但是使用SH型边界弹性波，所述弹性边界波装置的损耗低。 声界面波装置（1）包括：LiNbO 3基板（1），其在上表面形成有多个槽（1b） 电极层（3），其通过用金属材料填充槽（1b）并且包括IDT电极而形成; 以及形成在压电基板（1）的上表面（1b）和电极（3）之上的诸如SiO 2层的电介质层（4）。 电介质层（4）的上表面是平坦的。 LiNbO 3基板的欧拉角（0°，¸，-45°至+ 45°）的电极（3）的厚度¸和电介质层（4）的厚度在所示范围内 在下表1中：[表1]欧拉角（0°，¸，-45°至45°）的±‰¤0.1¸‰of第一组电极的厚度<0.07（0,76至106，-45至 45）0.8‰˙电介质层厚度‰¤2.50.07‰of第一组电极厚度<0.1（0,66〜116，-45〜45）0.8‰¤介电层厚度‰¤2.50.1‰¤首先厚度 组电极‰¤0.2（0,56〜125，-45〜45）0.8‰of介电层厚度‰¤2.50.01‰¤第二组电极厚度<0.02（0,71〜101，-45〜45）0.8 ‰of介质层厚度‰¤3.00.02‰of第二组电极厚度<0.06（0,68〜103，-45〜45）0.8‰¤介电层厚度‰¤3.00.06‰¤第二组电极厚度< 0.08（0,66〜109，-45〜45）0.8‰电介质层厚度³3。 0 0.08‰¤第二组电极厚度‰¤0.16（0,61〜123，-45〜45）0.8‰˙介电层厚度‰¤3.00.01‰³第三组电极厚度<0.02（0,61〜112 ，-45〜45）0.8‰电介质层厚度‰4.0.0 0.02‰第三组电极厚度<0.06（0,60〜122，-45〜45）0.8‰电介质层厚度‰¤4.00.06‰ ¤第三组电极厚度<0.08（0,56〜132，-45〜45）0.8‰⑤电介质层厚度‰‰4.0.0‰¤第三组电极厚度‰¤0.10（0,51〜136，-45 至45）0.8‰˙介电层厚度‰¤4.0每个电极的厚度和电介质层的厚度为归一化厚度H /»（»是声界波的波长）。

公开(公告)号：EP2658122B1

公开(公告)日：2019-02-13

申请号：EP11850373.9

申请日：2011-12-12

申请人： Murata Manufacturing Co., Ltd.

发明人： KIMURA, Tetsuya ,  OGAMI, Takashi ,  DAIMON, Katsuya

IPC分类号： H03H9/02

公开(公告)号：EP2056456B1

公开(公告)日：2013-03-13

申请号：EP07828226.6

申请日：2007-09-10

申请人： Murata Manufacturing Co. Ltd.

发明人： KADOTA, Michio ,  KIMURA, Tetsuya

IPC分类号： H03H3/08 ,  H03H9/02

CPC分类号： H03H9/0222 ,  H03H3/08 ,  H03H9/02559 ,  H03H9/02661 ,  H03H9/02834

公开(公告)号：EP2680285A1

公开(公告)日：2014-01-01

申请号：EP12749356.7

申请日：2012-02-14

申请人： Murata Manufacturing Co., Ltd.

发明人： KADOTA, Michio ,  KOUTSAROFF, Ivoyl P. ,  KIMURA, Tetsuya ,  TOCHISHITA, Hikari

IPC分类号： H01G7/06 ,  H03H9/17 ,  H03H9/64

CPC分类号： H01G7/06 ,  H03H9/542 ,  H03H9/64 ,  H03H9/6403 ,  H03H2003/0464

摘要： Provided is a variable capacitance element that includes a dielectric layer whose relative dielectric constant varies in accordance with an applied voltage and that can achieve reduction in size of a piezoelectric substrate such as a piezoelectric resonant component and a tunable filter. A variable capacitance element (1) includes a piezoelectric substrate (2), a buffer layer (3) that is formed on the piezoelectric substrate (2) and has an orientation, a dielectric layer (4) that is formed on the buffer layer (3) and whose relative dielectric constant varies in accordance with an applied voltage, and a first electrode and a second electrode that are provided so as to be capable of applying an electric field to the dielectric layer (4).

摘要翻译： 提供了一种可变电容元件，其包括相对介电常数根据施加电压而变化的介电层，并且可以实现诸如压电谐振部件和可调谐滤波器之类的压电基板的尺寸的减小。 可变电容元件（1）包括压电基板（2），形成在压电基板（2）上并具有取向的缓冲层（3），形成在缓冲层上的介电层（4） 3），其相对介电常数根据施加的电压而变化，以及第一电极和第二电极，其被设置为能够向电介质层（4）施加电场。

公开(公告)号：EP1973228A1

公开(公告)日：2008-09-24

申请号：EP06834507.3

申请日：2006-12-12

申请人： Murata Manufacturing Co. Ltd.

发明人： KADOTA, Michio ,  KIMURA, Tetsuya

IPC分类号： H03H3/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H03H9/25

CPC分类号： H03H3/08 ,  H03H3/10 ,  H03H9/02818 ,  H03H9/1092 ,  Y10T29/42 ,  Y10T29/49156 ,  Y10T29/49165

摘要： A surface-acoustic-wave device which does not need a complicated processing step, which does not need preparation of a component such as a cover member having a complicated shape, which is inexpensive, and which is capable of increasing miniaturization, and a method for manufacturing the surface-acoustic-wave device are provided. A method for manufacturing a surface-acoustic-wave-filter device (1) includes a step of forming grooves (2b and 2c) in one principal surface (2a) of a piezoelectric substrate (2), a step of embedding a metallic film in the grooves (2b) to form IDT electrodes, a step of performing a process of removing a portion of the piezoelectric substrate (2) from the one principal surface (2a) of the piezoelectric substrate (2), thereby forming a recessed portion (2d) having the bottom surface in which the IDT electrodes are embedded, and a step of bonding a cover member (13) to the piezoelectric substrate (2).

摘要翻译： 不需要复杂处理步骤的表面声波装置，其不需要制备便宜的并且能够增加小型化的诸如具有复杂形状的盖构件的部件的部件，以及用于 提供制造表面声波装置。 一种表面声波滤波器件（1）的制造方法包括在压电基板（2）的一个主面（2a）上形成槽（2b，2c）的工序，将金属膜嵌入的工序 用于形成IDT电极的凹槽（2b），从压电基片（2）的一个主表面（2a）执行去除压电基片（2）的一部分的处理的步骤，从而形成凹陷部分 ）和将盖构件（13）接合到压电基板（2）的步骤。

公开(公告)号：EP2658122A1

公开(公告)日：2013-10-30

申请号：EP11850373.9

申请日：2011-12-12

申请人： Murata Manufacturing Co., Ltd.

发明人： KIMURA, Tetsuya ,  OGAMI, Takashi ,  DAIMON, Katsuya

IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/25

CPC分类号： H03H9/02535 ,  H01L41/18 ,  H01L41/1873 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/02574 ,  Y10T29/42

摘要： An elastic wave device using plate waves is provided that requires no cavity and thus can be manufactured by a simplified process and offers high mechanical strength, ease of handling, and improved temperature characteristics. An elastic wave device (1) propagating plate waves has a stack of an acoustic reflection layer (3), a piezoelectric layer (4), and IDT electrode (5) on a supporting substrate 2. The piezoelectric layer (4) is thinner than the period of the fingers of the IDT electrode (5). The acoustic reflection layer (3) has low-acoustic-impedance layers (3b, 3d, 3f, and 3h) and high-acoustic-impedance layers (3a, 3c, 3e, and 3g). The low-acoustic-impedance layers are made of SiO 2 , and the high-acoustic-impedance layers are made of at least one material selected from the group consisting of W, LiTaO 3 , Al 2 O 3 , AIN, LiNbO 3 , SiN, and ZnO.

摘要翻译： 提供了使用平板波的弹性波装置，其不需要空腔，因此可以通过简化的工艺制造并且提供高机械强度，易于处理和改善的温度特性。 传播板波的弹性波装置（1）在支撑基板2上具有声反射层（3），压电层（4）和IDT电极（5）的叠层。压电层（4）比 IDT电极（5）的指状物的周期。 声反射层（3）具有低声阻抗层（3b，3d，3f和3h）和高声阻抗层（3a，3c，3e和3g）。 低声阻抗层由SiO 2制成，高声阻抗层由选自W，LiTaO 3，Al 2 O 3，AlN，LiNbO 3，SiN中的至少一种材料制成 ，和ZnO。

公开(公告)号：EP1973228B1

公开(公告)日：2012-02-01

申请号：EP06834507.3

申请日：2006-12-12

申请人： Murata Manufacturing Co. Ltd.

发明人： KADOTA, Michio ,  KIMURA, Tetsuya

IPC分类号： H03H3/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H03H9/25

CPC分类号： H03H3/08 ,  H03H3/10 ,  H03H9/02818 ,  H03H9/1092 ,  Y10T29/42 ,  Y10T29/49156 ,  Y10T29/49165

摘要： Disclosed is a low-cost miniaturizable surface acoustic wave device which does not require a complicated processing process or a component such as a cover member having a complicated shape. Also disclosed is a method for manufacturing such a surface acoustic wave device. Specifically disclosed is a method for manufacturing a surface acoustic wave filter device (1), which comprises a step for forming grooves (2b, 2c) in one major surface (2a) of a piezoelectric substrate (2), a step for forming an IDT electrode by filling the groove (2b) with a metal film, a following step wherein a part of the piezoelectric substrate (2) is removed from the one major surface (2a) of the piezoelectric substrate (2), thereby forming a recess (2d) having a bottom surface wherein the IDT electrode is embedded, and a succeeding step for joining a cover member (13) to the piezoelectric substrate (2).