公开(公告)号：EP1563480A4

公开(公告)日：2010-03-03

申请号：EP03770551

申请日：2003-09-30

申请人： NANOSYS INC

发明人： STUMBO DAVID ,  EMPEDOCLES STEPHEN

IPC分类号： G02F1/133 ,  G02F1/1343 ,  G02F1/1362 ,  G09G3/20 ,  H01L21/77 ,  H01L27/28 ,  H01L27/32 ,  H01L29/06 ,  H01L51/00 ,  H01L51/05 ,  C01B31/02 ,  H01L21/00 ,  H03H11/20

CPC分类号： G09G3/20 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G02F1/13454 ,  G02F2202/36 ,  G09G3/3648 ,  G09G2300/08 ,  G11C13/025 ,  H01L27/1214 ,  H01L27/283 ,  H01L27/3262 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0512

摘要： The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.

公开(公告)号：EP1563555A4

公开(公告)日：2009-08-26

申请号：EP03799305

申请日：2003-09-30

申请人： NANOSYS INC

发明人： STUMBO DAVID ,  EMPEDOCLES STEPHEN ,  NIU CHUNMING ,  DUAN XIANFENG

IPC分类号： C01B31/02 ,  G01V15/00 ,  G06K19/077 ,  H01L20060101 ,  H01L21/00 ,  H01L21/04 ,  H01L21/335 ,  H01L27/20 ,  H01L29/06 ,  H01L31/0352 ,  H01L51/00 ,  H01Q3/36 ,  H03H11/20 ,  H04R3/00

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  G06K19/07749 ,  H01L21/02603 ,  H01L21/02628 ,  H01L27/20 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L31/035281 ,  H01L2224/16227 ,  H01P1/184 ,  Y02E10/50

摘要： Macroelectronic substrate materials (5100) incorporating nanowires (2002) are described. These are used to provide underlying electronic (5110) elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

公开(公告)号：EP1522106A4

公开(公告)日：2009-12-16

申请号：EP03718122

申请日：2003-04-01

申请人： NANOSYS INC

发明人： EMPEDOCLES STEPHEN ,  BOCK LARRY ,  CHOW CALVIN ,  DUAN XIANFENG ,  NIU CHUNGMING ,  PONTIS GEORGE ,  SAHI VIJENDRA ,  ROMANO LINDA T ,  STUMBO DAVID

IPC分类号： B81C99/00 ,  C23F1/00 ,  H01L51/30 ,  H01L51/40 ,  H01L31/0312 ,  H01J1/30 ,  H01L21/00

CPC分类号： H01L51/0048 ,  B01J23/52 ,  B81B2203/0361 ,  B81B2207/015 ,  B81C3/005 ,  B81C99/008 ,  B81C2203/057 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11B5/743 ,  G11C2213/81 ,  H01L29/7869 ,  H01L51/0001 ,  H01L51/0595 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/856 ,  Y10S977/857 ,  Y10S977/858 ,  Y10S977/89 ,  H01L2924/00

公开(公告)号：EP1663853A4

公开(公告)日：2011-06-22

申请号：EP04784184

申请日：2004-09-15

申请人： NANOSYS INC

发明人： DUBROW ROBERT ,  ROMANO LINDA T ,  STUMBO DAVID

IPC分类号： B82B1/00 ,  B82B20060101 ,  C30B7/00 ,  C30B21/02 ,  C30B28/06 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02422 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B7/00 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02656 ,  Y10S977/762 ,  Y10S977/827

公开(公告)号：EP1547139A4

公开(公告)日：2009-08-26

申请号：EP03776200

申请日：2003-09-30

申请人： NANOSYS INC

发明人： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC分类号： C01B31/02 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

摘要： A method and apparatus for an electronic substrate (1920) having a plurality of semiconductor devices is described. A thin film of nanowires (1910) is formed on a substrate. The thin film of nanowires (1910) is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions is defined in the thin film of nanowires. Contacts (1902) are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.