摘要:
When a thin sheet-like substrate S is conveyed between conveying chambers (2) equipped with a processing apparatus (1) and kept in an inert gas atmosphere by using a conveying robot (30) equipped with an accommodation chamber (3) capable of accommodating the thin sheet-like substrate (S) in an inert gas atmosphere, a connection chamber (4) is interposed between the accommodation chamber (3) and the conveying chamber (2) when the thin sheet-like substrate (S) is transferred between the accommodation chamber (3) of the conveying robot (30) and the conveying chamber (2) on the side of the processing apparatus (1), and is vacuumized, and then an inert gas is introduced. Thereafter, gate valves (GV1 and GV2) of the accommodation chamber (3) and the conveying chamber (2) are opened and the thin sheet-like substrate (S) is carried in and out.
摘要:
A method for treating an exhaust gas, which comprises bringing an exhaust gas discharged from CVD equipment employing silicon-base gas into contact with a transition metal such as nickel or a silicide thereof preheated to a given temperature, thus decomposing a feed gas and high-boiling intermediates contained in the exhaust gas, and then rendering toxic components contained in the exhaust gas harmless.
摘要:
A process and an apparatus for recovering a noble gas, which can recover a noble gas exhausted from a noble gas employing system efficiently and also can supply the noble gas of a predetermined purity to the noble gas employing system and which can reduce consumption of the noble gas. In the process and apparatus for recovering a noble gas, when a noble gas contained in an exhaust gas exhausted from a noble gas employing system operated under reduced pressure is recovered, switching between introduction of the exhaust gas to a recovery system and exhaustion of the exhaust gas to an exhaust system is carried out under reduced pressure, and this switching operation is carried out depending on the content of impurity components contained in the exhaust gas or on the running state of the noble gas employing system.
摘要:
A method and device by which the yield of a thin plate-like substrate of a semiconductor integrated circuit, liquid crystal panel, etc., is improved by always transferring the substrate to each processing device in a highly clean damage-free state when the substrate is subjected to various kinds of treatment. A substrate is transferred through a gas tunnel through which a purging gas composed of in insert gas or a mixed gas of an inert gas and oxygen gas is made to flow. The concentrations of impurities in the gas tunnel are measured with a semiconductor laser detector, and the transfer of the substrate is controlled based on the obtained measured data.
摘要:
A method and apparatus for measuring the concentration of a very small amount of impurities in an object gas by an infrared spectroscopic analysis using a semiconductor laser. In order to carry out the analysis with a high sensitivity and a high accuracy, an object gas is introduced into a sample cell (5) and the cell is evacuated by a vacuum pump (16). An infrared beam of a wavelength in a region in which a high absorption peak due to impurities appears is emitted from a semiconductor laser (1) and passed through the sample cell (5) and a reference sample cell (8) in which impurities alone are sealed to measure a differential value absorption spectrum. The impurities are identified by comparing the spectrum of the object gas with that of impurities alone and determining a plurality of absorption peaks concerning the impurities, and the quantity of the impurities is determined on the basis of the absorption intensity at the highest peak. When impurity gas molecules form clusters in the object gas, the light of not less than 0.5 eV is applied to the clusters to dissociate the same, and the analysis of the gas is then carried out. This invention is suitably utilized, especially, for analyzing a very small amount of impurities in a semiconductor material gas.
摘要:
A method of producing highly clean dry air, including a raw air compressing step, a catalyst refining step for subjecting hydrogen and carbon monoxide and oxygen to a reaction, and an adsorption refining step for removing water and carbon dioxide, wherein the space velocity in the catalyst refining step is not higher than 3000 h , the adsorption refining step being carried out by passing a desiccant bed and a gaseous impurity remover bed in the direction of a flow of the raw air, the space velocity of the desiccant bed and gaseous impurity remover bed being not higher than 11000 h and not higher than 6000 h respectively.
摘要:
A dissolved oxygen reducing apparatus capable of supplying a liquid having an extremely small amount of dissolved oxygen. This dissolved oxygen reducing apparatus consists of a bubbling tank (24) having a liquid introduction port (21), a liquid discharge port (22) and an inert gas discharge port (23), an inert gas ejection nozzle (25) provided in the bubbling tank (24), and a liquid discharge pipe (26) joined to the liquid discharge port (22), an oxygen transmission coefficient of the bubbling tank (24) ad liquid discharge pipe (26) at 25 DEG C being not higher than 10 cc.cm/cm .sec.atm.
摘要:
A nitrogen gas supply system for efficiently supplying nitrogen gas in an amount and of purity sufficient and necessary to a wafer processing device (31) for subjecting a wafer to a predetermined processing and a nitrogen gas tunnel type wafer transfer device (32) for transferring wafers via a gate valve (37). This nitrogen gas supply system comprises a route (38) for supplying high-purity nitrogen gas obtained by a cryogenic separator (33) which is a nitrogen gas generating device to the wafer processing device, (31), a circulating route (40) in which an outlet portion (32a) and an inlet portion (32b) of the wafer transfer device (32) are caused to communicate with each other via refining equipment (39) and a replenishing route (44) for replenishing nitrogen gas from a liquefied nitrogen storage tank (36) to the circulating route (40).
摘要:
A method for treating an exhaust gas, which comprises the steps of introducing an exhaust gas being in an exited state in a facility for manufacture of a semiconductor device into a plasma treatment portion of a treating section under a reduced pressure, introducing the exhaust gas being maintained in an exited state by a plasma generating in the plasma treatment portion into a reactor in a removal reaction section, reacting the exhaust gas with a removing reaction agent comprised of particulate calcium oxide packed in the reactor and removing harmful gas components in the exhaust gas. The method may further include the step of supplying oxygen into the plasma treatment portion so as to subject the harmful gas components to oxidation decomposition in the presence of a plasma and then reacting the decomposed gas components with the removing reaction agent.
摘要:
A system for and a method of producing and supplying highly clean dry air, capable of producing and supplying highly clean dry air at a lower cost in and from a small plant, and being used by effectively circulating the same, the system comprising a clean room provided therein with transfer equipment having a storage and a transfer unit and with treatment equipment, a passage for supplying the highly clean dry air to either one or both of the transfer equipment and treatment equipment, and a passage for circulatingly supplying used highly clean dry air discharged from either one or both of the transfer equipment and treatment equipment to either one or both thereof, the circulating passage being connected to the transfer equipment and storage so as to circulatingly supply the used highly clean dry air therefrom to the storage.