公开(公告)号：EP2876673A4

公开(公告)日：2015-11-18

申请号：EP13819869

申请日：2013-07-17

申请人： NITTO DENKO CORP

发明人： MITANI MUNEHISA ,  EBE YUKI ,  OOYABU YASUNARI ,  NORO HIROSHI ,  KONO HIROKI

IPC分类号： H01L33/56 ,  H01L21/56 ,  H01L23/29 ,  H01L33/54

CPC分类号： H01L21/563 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/295 ,  H01L33/54 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2924/00

公开(公告)号：EP0951064A4

公开(公告)日：2005-02-23

申请号：EP97949206

申请日：1997-12-22

申请人： NITTO DENKO CORP

发明人： ITO SATOSHI ,  MIZUTANI MASAKI ,  NORO HIROSHI ,  SUDOU SHINICHIROU ,  FUKUSHIMA TAKASHI ,  KUWAMURA MAKOTO

IPC分类号： C08L63/00 ,  H01L21/56 ,  H01L23/29 ,  H01L21/60

CPC分类号： H01L24/29 ,  C08L63/00 ,  H01L21/563 ,  H01L23/293 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/29011 ,  H01L2224/29036 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/81193 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  C08L2666/02 ,  C08L61/04 ,  C08L2666/08 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014

摘要： The manufacture of a semiconductor device where a semiconductor element is mounted through a plurality of connecting electrodes on a wiring circuit board and the space between the above wiring circuit board and the semiconductor element is sealed with a sealing resin layer. This is a manufacturing method which is easy in resin sealing work for the space between the semiconductor element and a board and can suppress the occurrence of a warp of an entire semiconductor device, (1) by forming the above sealing resin layer by interposing stratified solid resin between the above wiring circuit board and the semiconductor element and fusing this solid resin, and (2) by heating the stratified solid resin interposed between the above wiring circuit board and the semiconductor element for a specified time, and at the stage that the above solid resin layer reaches a specified temperature range, by pressing and joining the wiring circuit board and the semiconductor element, under the condition (X) that the residual quantity of reactive heat is not more than 70 % of the initial residual quantity of reactive heat, provided that the initial residual quantity of reactive heat before heating of the solid resin measured by a differential scanning calorimeter (DSC) is defined as 100 %, and under the condition (Y) that the temperature of the semiconductor element is set higher than the temperature of the wiring circuit board and besides the temperature difference between both is 50 °C or over, and this can provide a semiconductor device excellent in reliability. Moreover, this can provide a semiconductor device which is excellent in the effect of easing the stress generated in the semiconductor element, the wiring circuit board, and the connecting electrode and has high reliability, by using sheet-shaped sealing material which gives hardener characteristics where the tensile elastic modulus at 25 °C of the sealing resin layer is 300-15000MPa for the above semiconductor device.

公开(公告)号：EP2147942A4

公开(公告)日：2013-10-02

申请号：EP08751859

申请日：2008-04-16

申请人： NITTO DENKO CORP

发明人： NORO HIROSHI

IPC分类号： C08G59/62 ,  C08G59/32 ,  C08G59/42 ,  C08G59/68 ,  H01L23/29 ,  H01L23/31 ,  H01L33/00 ,  H01L33/56

CPC分类号： H01L23/293 ,  C08G59/3245 ,  C08G59/4215 ,  C08G59/685 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2924/00