公开(公告)号：EP2945189A4

公开(公告)日：2016-11-16

申请号：EP13870456

申请日：2013-01-09

申请人： HITACHI LTD

发明人： TANIE HISASHI ,  IKEDA OSAMU

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L23/367

CPC分类号： H01L24/09 ,  H01L21/563 ,  H01L21/78 ,  H01L23/5382 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/033 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0383 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/0901 ,  H01L2224/0905 ,  H01L2224/091 ,  H01L2224/095 ,  H01L2224/1145 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1411 ,  H01L2224/14181 ,  H01L2224/17107 ,  H01L2224/2745 ,  H01L2224/29078 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/32501 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/73204 ,  H01L2224/75301 ,  H01L2224/75755 ,  H01L2224/75756 ,  H01L2224/83121 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/27 ,  H01L2924/00

公开(公告)号：EP2917931A1

公开(公告)日：2015-09-16

申请号：EP13801876.7

申请日：2013-11-08

申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO ,  IMEC vzw

发明人： SMITS, Edsger Constant Pieter ,  PERINCHERY, Sandeep Menon ,  VAN DEN BRAND, Jeroen ,  MANDAMPARAMBIL, Rajesh ,  SCHOO, Harmannus Franciscus Maria

IPC分类号： H01L21/60 ,  H01L21/48 ,  B23K3/06 ,  B23K35/26 ,  C09J9/02 ,  H01L23/00 ,  H01L33/62 ,  H01L23/498 ,  H01L23/485 ,  H01L21/683

CPC分类号： H01L24/83 ,  B23K35/02 ,  B23K35/26 ,  B23K35/262 ,  C09J5/06 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/4853 ,  H01L21/50 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/49816 ,  H01L23/4985 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L33/62 ,  H01L2021/60277 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1111 ,  H01L2224/1133 ,  H01L2224/13005 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14131 ,  H01L2224/27001 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29034 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/742 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81815 ,  H01L2224/81862 ,  H01L2224/83192 ,  H01L2224/83224 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/381 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/2076 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method is provided for assembly of a micro-electronic component comprising the steps of: providing a conductive die bonding material comprising of a conductive thermosettable resin material or flux based solder and a dynamic release layer adjacent to the conductive thermoplastic material die bonding material layer; and impinging a laser beam on the dynamic release layer adjacent to the die bonding material layer; in such a way that the dynamic release layer is activated to direct conductive die bonding material matter towards the pad structure to be treated to cover a selected part of the pad structure with a transferred conductive die bonding material; and wherein the laser beam is restricted in timing and energy, in such a way that the die bonding material matter remains thermosetting. Accordingly adhesive matter can be transferred while preventing that the adhesive is rendered ineffective by thermal overexposure in the transferring process.

公开(公告)号：EP2888761A1

公开(公告)日：2015-07-01

申请号：EP13756637.8

申请日：2013-07-31

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： ALIANE, Abdelkader ,  COPPARD, Romain ,  TALLAL, Jamal

IPC分类号： H01L23/14 ,  H01L23/495 ,  H01L31/02 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/03 ,  H01L21/4867 ,  H01L21/563 ,  H01L23/145 ,  H01L23/49811 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02166 ,  H01L2224/02175 ,  H01L2224/0219 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/10156 ,  H01L2224/10175 ,  H01L2224/1131 ,  H01L2224/11332 ,  H01L2224/11515 ,  H01L2224/11848 ,  H01L2224/13007 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13187 ,  H01L2224/1601 ,  H01L2224/16505 ,  H01L2224/29035 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81121 ,  H01L2224/81192 ,  H01L2224/81224 ,  H01L2224/8123 ,  H01L2224/81409 ,  H01L2224/818 ,  H01L2224/8184 ,  H01L2224/819 ,  H01L2224/81948 ,  H01L2224/83102 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/053 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01022 ,  H01L2924/20754 ,  H01L2924/00012 ,  H01L2224/05552

摘要： This process for fabricating a microelectronic device comprising a first component (12) hybridised with a second component (14) by means of electrical interconnects consists in: producing first and second components (12, 14), the second component (14) being transparent to ultraviolet radiation at least in line with locations provided for the interconnects; forming interconnecting elements (22) comprising copper oxide on the second component (14) in the locations provided for the interconnects; placing the first and second components (12, 14) one on the other; and applying ultraviolet radiation, through the second component (14), to the elements comprising copper oxide so as to implement an ultraviolet anneal converting the copper oxide into copper.

公开(公告)号：EP1306897B1

公开(公告)日：2013-12-11

申请号：EP02253032.3

申请日：2002-04-30

申请人： FUJITSU LIMITED

发明人： Sakuyama, Seiki, c/o Fujitsu Limited ,  Imaizumi, Nobuhiro, c/o Fujitsu Limited ,  Yagi, Tomohisa, c/o Fujitsu Limited

IPC分类号： H01L21/56

CPC分类号： H05K3/321 ,  H01L21/563 ,  H01L24/11 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/29011 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15787 ,  H05K3/3436 ,  H05K3/3473 ,  H05K3/3484 ,  H05K2201/0209 ,  H05K2201/10977 ,  H05K2203/043 ,  H05K2203/054 ,  H05K2203/0568 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00012

公开(公告)号：EP1726033A2

公开(公告)日：2006-11-29

申请号：EP05713772.1

申请日：2005-02-18

申请人： Gelcore LLC

发明人： SHELTON, Bryan, S. ,  LIBON, Sebastien ,  VENUGOPALAN, Hari, S. ,  ELIASHEVICH, Ivan ,  WEAVER, Stanton, E., Jr. ,  CHEN, Chen-Lun Hsing ,  SOULES, Thomas, F. ,  LEBOEUF, Steven, Francis ,  ARTHUR, Stephen

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/62 ,  H01L24/81 ,  H01L33/38 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05005 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05611 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1357 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/3003 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/8321 ,  H01L2224/8323 ,  H01L2224/83815 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p- type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).

公开(公告)号：EP0951064A4

公开(公告)日：2005-02-23

申请号：EP97949206

申请日：1997-12-22

申请人： NITTO DENKO CORP

发明人： ITO SATOSHI ,  MIZUTANI MASAKI ,  NORO HIROSHI ,  SUDOU SHINICHIROU ,  FUKUSHIMA TAKASHI ,  KUWAMURA MAKOTO

IPC分类号： C08L63/00 ,  H01L21/56 ,  H01L23/29 ,  H01L21/60

CPC分类号： H01L24/29 ,  C08L63/00 ,  H01L21/563 ,  H01L23/293 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/29011 ,  H01L2224/29036 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/81193 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  C08L2666/02 ,  C08L61/04 ,  C08L2666/08 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/014

摘要： The manufacture of a semiconductor device where a semiconductor element is mounted through a plurality of connecting electrodes on a wiring circuit board and the space between the above wiring circuit board and the semiconductor element is sealed with a sealing resin layer. This is a manufacturing method which is easy in resin sealing work for the space between the semiconductor element and a board and can suppress the occurrence of a warp of an entire semiconductor device, (1) by forming the above sealing resin layer by interposing stratified solid resin between the above wiring circuit board and the semiconductor element and fusing this solid resin, and (2) by heating the stratified solid resin interposed between the above wiring circuit board and the semiconductor element for a specified time, and at the stage that the above solid resin layer reaches a specified temperature range, by pressing and joining the wiring circuit board and the semiconductor element, under the condition (X) that the residual quantity of reactive heat is not more than 70 % of the initial residual quantity of reactive heat, provided that the initial residual quantity of reactive heat before heating of the solid resin measured by a differential scanning calorimeter (DSC) is defined as 100 %, and under the condition (Y) that the temperature of the semiconductor element is set higher than the temperature of the wiring circuit board and besides the temperature difference between both is 50 °C or over, and this can provide a semiconductor device excellent in reliability. Moreover, this can provide a semiconductor device which is excellent in the effect of easing the stress generated in the semiconductor element, the wiring circuit board, and the connecting electrode and has high reliability, by using sheet-shaped sealing material which gives hardener characteristics where the tensile elastic modulus at 25 °C of the sealing resin layer is 300-15000MPa for the above semiconductor device.

公开(公告)号：EP1306897A2

公开(公告)日：2003-05-02

申请号：EP02253032.3

申请日：2002-04-30

申请人： FUJITSU LIMITED

发明人： Sakuyama, Seiki, c/o Fujitsu Limited ,  Imaizumi, Nobuhiro, c/o Fujitsu Limited ,  Yagi, Tomohisa, c/o Fujitsu Limited

IPC分类号： H01L21/56

CPC分类号： H05K3/321 ,  H01L21/563 ,  H01L24/11 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/29011 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15787 ,  H05K3/3436 ,  H05K3/3473 ,  H05K3/3484 ,  H05K2201/0209 ,  H05K2201/10977 ,  H05K2203/043 ,  H05K2203/054 ,  H05K2203/0568 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A process of making an electrode-to-electrode bond structure includes a step of forming a resin coating on a first bonding object having a first electrode portion in a manner such that the resin coating covers the first electrode portion. Then, an opening is formed in the resin coating to expose the first electrode portion. Then, the opening is filled with a metal paste containing a metal and a resin component. Then, the first bonding object is placed on a second bonding object having a second electrode portion in a manner such that the metal paste filled in the opening faces the second electrode portion while the resin coating contacts the second bondingobject. Finally, heat-treatment isperformedtocause the first electrode portion and the second electrode portion to be electrically connected with each other via the metal while causing the resin coating to harden.

摘要翻译： 制造电极对电极结合结构的工序包括在具有第一电极部的第一接合体上形成树脂被膜的工序，使树脂被覆覆盖第一电极部。 然后，在树脂涂层中形成开口以露出第一电极部分。 然后，将开口填充有含有金属和树脂成分的金属糊料。 然后，第一接合物被放置在具有第二电极部分的第二接合物上，使得填充在开口中的金属膏面向第二电极部分，同时树脂涂层接触第二接合物。 最后，热处理是由于第一电极部分和第二电极部分经由金属彼此电连接，同时使树脂涂层变硬。

公开(公告)号：EP1020104B1

公开(公告)日：2002-11-27

申请号：EP98945532.4

申请日：1998-09-30

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： YAGI, Yoshihiko ,  OTANI, Hiroyuki

IPC分类号： H05K13/04 ,  H05K3/30

CPC分类号： H01L24/29 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3135 ,  H01L24/11 ,  H01L24/13 ,  H01L24/32 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/11822 ,  H01L2224/13 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16225 ,  H01L2224/29007 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/3511 ,  H05K3/305 ,  H05K3/321 ,  H05K13/0469 ,  H05K2201/0125 ,  H05K2201/0187 ,  H05K2201/10674 ,  H05K2201/10977 ,  Y02P70/613 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49149 ,  Y10T29/49171 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The present invention provides a method for mounting a semiconductor element to a circuit board and a semiconductor device whereby connection reliability and connection strength in bonding of the semiconductor element and circuit board are enhanced and a connection resistance value is stabilized low. An insulating adhesive (107) is applied to an opposite face (101a) of a circuit board (101). The circuit board is then connected with a semiconductor element (103) by a conductive adhesive (106) and the insulating adhesive which are interposed between an electrode (102) on the circuit board and the projecting electrode and set in the same process. The circuit board and semiconductor element are connected by the insulating adhesive in addition to the conductive adhesive, so that connection reliability and connection strength are high and a connection resistance value is stabilized low.

公开(公告)号：EP2232964B1

公开(公告)日：2018-08-01

申请号：EP08862313.7

申请日：2008-12-03

申请人： Micron Technology, Inc.

发明人： LEE, Teck, Kheng

IPC分类号： H05K3/40

CPC分类号： H01L24/14 ,  H01L21/4846 ,  H01L23/481 ,  H01L23/49811 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/1012 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/73103 ,  H01L2224/73204 ,  H01L2224/81136 ,  H01L2224/81138 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/20105 ,  H01L2924/20106 ,  H05K3/06 ,  H05K3/325 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/10674 ,  H05K2201/10734 ,  H05K2201/10977 ,  H05K2203/0315 ,  H05K2203/0369 ,  H05K2203/1476 ,  H01L2924/00012

摘要： A method is disclosed which includes forming a layer of conductive material above a substrate, forming a masking layer above the layer of conductive material, performing a first etching process on the layer of conductive material with the masking layer in place, removing the masking layer and, after removing the masking layer, performing an isotropic etching process on the layer of conductive material to thereby define a plurality of piercing bond structures positioned on the substrate.

公开(公告)号：EP3061131A1

公开(公告)日：2016-08-31

申请号：EP14783730.6

申请日：2014-09-24

申请人： Oracle International Corporation

发明人： DAYRINGER, Michael, H., S. ,  HOPKINS, R., David ,  CHOW, Alex

IPC分类号： H01L25/065 ,  H01L21/98

CPC分类号： H01L25/50 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/72 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/05555 ,  H01L2224/0557 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/131 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/1601 ,  H01L2224/16105 ,  H01L2224/16135 ,  H01L2224/16151 ,  H01L2224/1703 ,  H01L2224/2919 ,  H01L2224/29193 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73257 ,  H01L2224/75705 ,  H01L2224/7598 ,  H01L2224/81007 ,  H01L2224/81129 ,  H01L2224/81141 ,  H01L2224/81815 ,  H01L2224/8185 ,  H01L2224/81898 ,  H01L2224/819 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/92143 ,  H01L2225/06517 ,  H01L2225/06531 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06589 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/37001

摘要： An assembly component (100) and a technique for assembling a chip package using the assembly component are described. This chip package includes a set of semiconductor dies (310-1 - 310-N) that are arranged in a stack in a vertical direction, which are offset from each other in a horizontal direction to define a stepped terrace (112-1) at one side of the vertical stack. Moreover, the chip package may be assembled using the assembly component (100). In particular, the assembly component may include a pair of stepped terraces (112-1,112-2) that approximately mirror the stepped terrace of the chip package and which provide vertical position references for an assembly tool that positions the set of semiconductor dies in the vertical stack during assembly of the chip package.