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公开(公告)号:EP2329430B1
公开(公告)日:2020-12-02
申请号:EP09786833.5
申请日:2009-08-06
申请人: NXP B.V.
IPC分类号: G06K7/00 , G06K19/07 , H01L23/66 , G06K19/077
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公开(公告)号:EP2329430A1
公开(公告)日:2011-06-08
申请号:EP09786833.5
申请日:2009-08-06
申请人: NXP B.V.
IPC分类号: G06K19/077 , H01L27/00
CPC分类号: G06K7/0008 , G06K19/0723 , G06K19/0726 , G06K19/07749 , H01L23/66 , H01L2223/6677 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00014 , H01L2924/19015 , H01L2924/19107 , H01L2924/3011 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: A reconfigurable radio-frequency front-end 20 with an antenna 24 and a resonant circuit within a matching network 22. In order to provide for high tuning range with low cost and low size, a matching network 22 may comprise at least one electrically tunable passive solid-state dielectrical component 6 on a carrier substrate 2.
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公开(公告)号:EP2274756A1
公开(公告)日:2011-01-19
申请号:EP09742493.1
申请日:2009-04-29
申请人: NXP B.V.
发明人: FURUKAWA, Yukiko , REIMANN, Klaus , JEDEMA, Friso Jacobus , TIGGELMAN, Markus Petrus Josephus , ROEST, Aarnoud Laurens
IPC分类号: H01G7/04
CPC分类号: H01G7/04
摘要: The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (ε
r ) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.
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