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    MICROWAVE PLASMA TREATMENT APPARATUS
    1.
    发明公开
    MICROWAVE PLASMA TREATMENT APPARATUS 审中-公开
    微波等离子体处理装置

    公开(公告)号：EP3264866A1

    公开(公告)日：2018-01-03

    申请号：EP16755415.3

    申请日：2016-02-22

    申请人： National Institute of Advanced Industrial Science and Technology

    发明人： KIM Jaeho ,  SAKAKITA Hajime

    IPC分类号： H05H1/24 ,  B01J19/08 ,  C23C16/455 ,  C23C16/511 ,  C23C16/513 ,  H05H1/46

    CPC分类号： H05H1/36 ,  B01J19/08 ,  B01J19/126 ,  C23C16/455 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/513 ,  H05H1/46 ,  H05H2001/4607

    摘要： [Problem] To provide a microwave plasma treatment apparatus that is not provided with complicated, long gas flow paths inside a dielectric substrate, to stabilize generation and retention of a plasma, and can generate a highly uniform, high-density, stable low-temperature plasma not only at low atmospheric pressures but also at middle atmospheric pressures and high atmospheric pressures.
    [Solution] In a micro plasma treatment apparatus including a dielectric substrate, a microwave introducing section, a microstrip line, an earth conductor, a gas inlet, a plasma generating section, and a nozzle for blowing out a plasma, the gas inlet is provided at the earth conductor or the microstrip line, and the gas inlet is provided with a diameter preferably smaller than a cut-off wavelength determined depending on a cross-section of the gas inlet, to prevent leakage of a microwave.

    摘要翻译： 本发明的目的在于提供一种微波等离子体处理装置，其在电介质基板的内部不具有复杂且长的气体流路，能够稳定等离子体的生成和保持，并且能够产生高度均匀且高密度且稳定的低温 等离子体不仅在低气压下，而且在中等大气压和高气压下。 解决方案在包括电介质基板，微波导入部，微带线，接地导体，气体导入口，等离子体产生部以及用于吹出等离子体的喷嘴的微小型等离子体处理装置中，具备气体导入口 在接地导体或微带线上，气体入口的直径优选小于根据气体入口的横截面确定的截止波长，以防止微波泄漏。

    MANUFACTURING METHOD FOR TRANSPARENT CONDUCTIVE CARBON FILM, AND TRANSPARENT CONDUCTIVE CARBON FILM
    4.
    发明公开
    MANUFACTURING METHOD FOR TRANSPARENT CONDUCTIVE CARBON FILM, AND TRANSPARENT CONDUCTIVE CARBON FILM 有权
    HERSTELLUNGSVERFAHRENFÜREINEN TRANSPARENTENLEITFÄHIGENKOHLENSTOFFFILM

    公开(公告)号：EP2548995A1

    公开(公告)日：2013-01-23

    申请号：EP11756381.7

    申请日：2011-03-17

    申请人： National Institute of Advanced Industrial Science and Technology

    发明人： KIM Jaeho ,  ISHIHARA Masatou ,  KOGA Yoshinori ,  TSUGAWA Kazuo ,  HASEGAWA Masataka ,  IIJIMA Sumio ,  YAMADA Takatoshi

    IPC分类号： C23C16/26 ,  C23C16/511 ,  C23C16/54 ,  H01B13/00

    CPC分类号： C23C16/511 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C23C16/26 ,  C23C16/545 ,  H01B1/04

    摘要： An object of the present invention is to solve problems such as high temperature processing and long processing time, which are issues of formation of a graphene film by thermal CVD, thereby providing a technique of forming a transparent conductive carbon film using a crystalline carbon film formed at lower temperature within a short time using a graphene film, and the method of the present invention is characterized by setting the temperature of a base material to 500°C or lower and the pressure to 50 Pa or less, and also depositing a transparent conductive carbon film on a surface of a base material by a microwave surface-wave plasma CVD method in a gas atmosphere in which an oxidation inhibitor as an additive gas for suppressing oxidation of the surface of the base material is added to a carbon-containing gas or a mixed gas of a carbon-containing gas and an inert gas.

    摘要翻译： 本发明的目的是解决通过热CVD形成石墨烯膜的问题，例如高温处理和长处理时间等问题，从而提供使用形成的结晶性碳膜形成透明导电性碳膜的技术 在较短时间内使用石墨烯薄膜，本发明的方法的特征在于将基材的温度设定为500℃以下，压力为50Pa以下，并且还沉积透明导电性 通过微波表面波等离子体CVD法在含碳气体中添加作为用于抑制基材表面的氧化的添加气体的氧化抑制剂的气体气氛中，在基材表面上形成碳膜，或 含碳气体和惰性气体的混合气体。

    METHOD FOR PRODUCING GRAPHENE AND GRAPHENE
    5.
    发明公开
    METHOD FOR PRODUCING GRAPHENE AND GRAPHENE 有权
    VERFAHREN ZUR HERSTELLUNG VON GRAPHEN

    公开(公告)号：EP2674396A1

    公开(公告)日：2013-12-18

    申请号：EP12745110.2

    申请日：2012-02-10

    申请人： National Institute of Advanced Industrial Science and Technology

    发明人： YAMADA Takatoshi ,  KIM Jaeho ,  ISHIHARA Masatou ,  KOGA Yoshinori ,  HASEGAWA Masataka ,  IIJIMA Sumio

    IPC分类号： C01B31/02

    CPC分类号： C01B31/0446 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186

    摘要： A technique for forming graphene which solves problems involved in formation of graphene by a thermal CVD method and a resin carbonization method that a high temperature is used and the treatment time is long and can form graphene at a lower temperature in a shorter time is provided. The above problems are solved by performing hydrogen plasma treatment on a copper foil substrate having an organic substance applied thereon by use of a microwave surface wave plasma treatment device and forming graphene on the copper foil substrate by the hydrogen plasma treatment.

    摘要翻译： 提供一种用于通过热CVD法和树脂碳化方法来解决涉及石墨烯形成的问题的石墨烯的技术，其使用高温并且处理时间长并且可以在较短时间内在较低温度下形成石墨烯。 通过使用微波表面波等离子体处理装置对其上施加有机物质的铜箔基板进行氢等离子体处理，并通过氢等离子体处理在铜箔基板上形成石墨烯来解决上述问题。