摘要:
A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要:
A method for manufacturing a semiconductor device comprising: a step for readying each of a semiconductor element (1), a substrate (2) having Cu as a principal element at least on a surface, and a ZnAl solder chip (3') having a smaller shape than that of the semiconductor element; a step for disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; a step for increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load (31) to the ZnAl solder chip, causing the ZnAl solder chip to melt, and forming a ZnAl solder layer (3); and a step for reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要:
A semiconductor module has a pair of semiconductor devices 16, 18 that are connected in series with each other and have first terminals 12, 14 electrically connected to a first power system BT and a second terminal 13 electrically connected to a second power system M, a heat sink 7, a first electrode 10 that is electrically connected both to the first terminal 12, that is one of the first terminals, and to one of electrodes of the semiconductor device 16, that is one of the pair of semiconductor devices, an output electrode 11 that is electrically connected both to the second terminal 13 and to one of electrodes of the semiconductor device 18, that is the other one of the pair of semiconductor devices, and a second electrode 9 that is electrically connected to the first terminal 14, that is the other one of the first terminals. The second electrode 9 is connected to the heat sink 7 via a first insulating member 8a, and the output electrode 11 is connected to the second electrode 9 via a second insulating member 8b.
摘要:
A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) which performs switching control on the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected between the control electrode (G) of the first switching element (Q1) and a low potential-side electrode (S) of the first switching element (Q1). A high potential-side electrode of the second switching element (14) is connected to the control electrode (G) of the first switching element (Q1). A low potential-side electrode of the second switching element (14) is connected to one electrode of the first capacitor (15). The other electrode of the first capacitor (15) is connected to the low potential-side electrode (S) of the first switching element (Q1). A control electrode of the second switching element (14) is connected to an electrode of the resistor (11) connected to the control circuit (13).