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    A METHOD FOR DRIVING SWITCHING STAGES, AND CORRESPONDING CIRCUIT AND DEVICE
    3.
    发明公开
    A METHOD FOR DRIVING SWITCHING STAGES, AND CORRESPONDING CIRCUIT AND DEVICE 审中-公开
    一种驱动切换阶段的方法，以及相应的电路和设备

    公开(公告)号：EP3229374A1

    公开(公告)日：2017-10-11

    申请号：EP16203539.8

    申请日：2016-12-12

    申请人： STMicroelectronics S.r.l.

    发明人： Brambilla, Davide Luigi

    IPC分类号： H03K19/003 ,  H03K17/567

    CPC分类号： H03K19/00361 ,  H03K17/166

    摘要： A switching stage, including a first transistor (M1) and a second transistor (M2) having their current paths cascaded between a supply terminal (Vcc) and a ground terminal (Gnd), may be driven by:
    - alternatively switching on and switching off the first transistor (M1) and the second transistor (M2) by applying (11, 12) control currents (Ig M1, Ig M2) to the control terminals of the first transistor (M1) and second transistor (M2);
    - sensing (21) the voltage across the first transistor (M1); and
    - controlling (12) the control current (Ig M2) applied to the control terminal of the second transistor (M2) as a function of the voltage sensed across the first transistor (M1).

    摘要翻译： 包括具有在电源端（Vcc）和接地端（Gnd）之间级联的电流路径的第一晶体管（M1）和第二晶体管（M2）的开关级可以通过以下来驱动： - 交替地接通和断开 （M1）和第二晶体管（M2）的控制端施加（11,12）控制电流（IgM1，IgM2）来控制第一晶体管（M1）和第二晶体管（M2）。 - 感测（21）第一晶体管（M1）两端的电压; 以及 - 作为在第一晶体管（M1）两端感测的电压的函数，控制（12）施加到第二晶体管（M2）的控制端子的控制电流（Ig M2）。

    POWER CONVERSION DEVICE AND POWER CONVERSION DEVICE CONTROL METHOD
    5.
    发明公开
    POWER CONVERSION DEVICE AND POWER CONVERSION DEVICE CONTROL METHOD 审中-公开
    LEISTUNGSUMWANDLUNGSVORRICHUNG UND LEI​​STUNGSUMWANDLUNGSVORRICHTUNGSTEUERUNGSVERFAHREN

    公开(公告)号：EP3089346A4

    公开(公告)日：2017-08-23

    申请号：EP13900448

    申请日：2013-12-27

    申请人： HITACHI INDUSTRY EQUIPMENT SYSTEMS CO LTD

    发明人： IBORI SATOSHI ,  SASAKI YASUSHI ,  TOMIYAMA KIYOTAKA

    IPC分类号： H02M7/537 ,  H02M1/00 ,  H02M1/08 ,  H02M5/458 ,  H02M7/48 ,  H02M7/5387 ,  H02P27/06 ,  H03K17/16

    CPC分类号： H02M1/08 ,  H02M5/458 ,  H02M7/53871 ,  H02M2001/0009 ,  H02M2001/0029 ,  H02P27/06 ,  H03K17/166

    摘要： The present invention addresses the problems of the increase of leakage current and noise failure induced in a peripheral device, which are attributable to a steep dV/dt because when a power conversion device is configured using a wide-bandgap semiconductor element, the turn-on speed and turn-off speed are extremely fast. A power conversion device comprises: a converter for converting an AC voltage to a DC voltage; a DC intermediate circuit for smoothing the DC voltage converted by the converter; an inverter for converting the DC voltage smoothed by the DC intermediate circuit to an AC voltage; a gate drive circuit for driving a semiconductor switching element in the inverter; a current detector for detecting current flowing through the power conversion device; and a control circuit for detecting each current component value from the current detected by the current detector and for, based on the detected each current component value or the power factor obtained from the each current component value, changing the gate resistance value of the gate drive circuit.

    摘要翻译： 本发明解决了由于陡峭的dV / dt导致的在外围装置中引起的泄漏电流和噪声故障的增加的问题，因为当使用宽带隙半导体元件配置功率转换装置时，导通 速度和关闭速度都非常快。 一种功率转换装置，包括：用于将交流电压转换为直流电压的转换器; DC中间电路，用于平滑由转换器转换的DC电压; 逆变器，用于将由DC中间电路平滑的DC电压转换成AC电压; 用于驱动逆变器中的半导体开关元件的栅极驱动电路; 电流检测器，用于检测流过功率转换装置的电流; 以及控制电路，用于根据由电流检测器检测到的电流来检测每个电流分量值，并且基于检测到的每个电流分量值或从每个电流分量值获得的功率因数来改变栅极驱动器的栅极电阻值 电路。

    LOW NOISE POWER SUPPLY MOSFET GATE DRIVE SCHEME
    8.
    发明公开
    LOW NOISE POWER SUPPLY MOSFET GATE DRIVE SCHEME 审中-公开
    MOSFET-GATE-ANSTEUERUNGSSCHEMA ZUR RAUSCHARMEN STROMVERSORGUNG

    公开(公告)号：EP3021487A1

    公开(公告)日：2016-05-18

    申请号：EP15194579.7

    申请日：2015-11-13

    申请人： Keithley Instruments, Inc.

    发明人： GOEKE, Wayne

    IPC分类号： H03K17/16 ,  H02M1/08

    CPC分类号： H02M1/00 ,  H02M3/33569 ,  H02M2001/0029 ,  H03K17/163 ,  H03K17/166 ,  H03K2217/0036

    摘要： A switching power supply can include multiple power MOSFETs that receive an initial gate drive waveform comprising a fast slew rate region having a negative slope and a slow slew rate region also having a negative slope. The MOSFETs can turn off during the slow slew rate region of the initial gate drive waveform.

    摘要翻译： 开关电源可以包括多个功率MOSFET，其接收包括具有负斜率的快速压摆率区域和也具有负斜率的慢压摆率区域的初始栅极驱动波形。 在初始栅极驱动波形的慢速转换速率区域内，MOSFET可能会关闭。

    COMMUTATION CELL AND COMPENSATION CIRCUIT THEREFOR
    10.
    发明公开
    COMMUTATION CELL AND COMPENSATION CIRCUIT THEREFOR 审中-公开
    换向单元和补偿电路

    公开(公告)号：EP2982038A1

    公开(公告)日：2016-02-10

    申请号：EP14779957.1

    申请日：2014-04-04

    申请人： TM4 Inc.

    发明人： CYR, Jean-Marc ,  EL YACOUBI, Maalainine ,  FLEURY, Pascal ,  AMAR, Mohammed

    IPC分类号： H03K17/08 ,  H02M1/32

    CPC分类号： H03K17/08 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H02M1/32 ,  H02P6/14 ,  H03K17/082 ,  H03K17/166 ,  H03K17/168 ,  H03K17/567 ,  H01L2924/00014

    摘要： The present disclosure relates to a commutation cell and to a compensation circuit for limiting overvoltage across the power electronic switch of the commutation cell and for limiting a recovery current in a freewheel diode of the commutation cell. The power electronic switch has a parasitic emitter inductance. A variable gain compensation circuit generates a feedback from a voltage generated across the parasitic inductance of the emitter of the power switch at turn-on or turn-off of the power electronic switch. The compensation circuit provides the feedback to a control of the power electronic switch to reduce the voltage generated on the parasitic emitter inductance. A power converter including the commutation cell with the compensation circuit is also disclosed.

    摘要翻译： 本发明涉及用于限制整流单元的功率电子开关两端的过电压并限制整流单元的续流二极管中的恢复电流的整流单元和补偿电路。 电力电子开关具有寄生发射极电感。 可变增益补偿电路根据在功率开关的导通或关断时从功率开关的发射极的寄生电感上产生的电压来产生反馈。 补偿电路向电力电子开关的控制提供反馈，以减小寄生发射极电感上产生的电压。 还公开了包括具有补偿电路的换向单元的功率转换器。