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    SEMICONDUCTOR MODULE
    4.
    发明公开
    SEMICONDUCTOR MODULE 审中-公开
    HALBLEITERMODUL

    公开(公告)号：EP2750184A1

    公开(公告)日：2014-07-02

    申请号：EP12825114.7

    申请日：2012-08-24

    申请人： Nissan Motor Co., Ltd ,  Fuji Electric Co., Ltd.

    发明人： ZUSHI, Yusuke ,  MURAKAMI, Yoshinori ,  TANIMOTO, Satoshi ,  SATO, Shinji ,  MATSUI, Kohei

    IPC分类号： H01L23/36 ,  H01L25/07 ,  H01L25/18

    摘要： A semiconductor module has a pair of semiconductor devices 16, 18 that are connected in series with each other and have first terminals 12, 14 electrically connected to a first power system BT and a second terminal 13 electrically connected to a second power system M, a heat sink 7, a first electrode 10 that is electrically connected both to the first terminal 12, that is one of the first terminals, and to one of electrodes of the semiconductor device 16, that is one of the pair of semiconductor devices, an output electrode 11 that is electrically connected both to the second terminal 13 and to one of electrodes of the semiconductor device 18, that is the other one of the pair of semiconductor devices, and a second electrode 9 that is electrically connected to the first terminal 14, that is the other one of the first terminals. The second electrode 9 is connected to the heat sink 7 via a first insulating member 8a, and the output electrode 11 is connected to the second electrode 9 via a second insulating member 8b.

    摘要翻译： 半导体模块具有彼此串联连接的一对半导体器件16,18，并且具有电连接到第一电力系统BT的第一端子12,14和与第二电力系统M电连接的第二端子13， 散热器7，与作为第一端子之一的第一端子12电连接的第一电极10以及作为一对半导体器件中的一个的半导体器件16的一个电极，输出 电连接到第二端子13和半导体器件18的电极之一的电极11，半导体器件18的一个半导体器件中的另一个以及与第一端子14电连接的第二电极9， 那是第一个终端的另一个。 第二电极9经由第一绝缘构件8a与散热器7连接，输出电极11经由第二绝缘构件8b与第二电极9连接。

    SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE
    5.
    发明公开
    SWITCHING CIRCUIT AND SEMICONDUCTOR MODULE 有权
    SCHALTKREIS UND HALBLEITERMODUL

    公开(公告)号：EP2712085A1

    公开(公告)日：2014-03-26

    申请号：EP12781783.1

    申请日：2012-05-11

    申请人： NISSAN MOTOR CO., LTD. ,  Fuji Electric Co., Ltd.

    发明人： ZUSHI, Yusuke ,  MURAKAMI, Yoshinori ,  TANIMOTO, Satoshi ,  SATO, Shinji ,  MATSUI, Kohei

    IPC分类号： H03K17/16 ,  H01L29/12 ,  H01L29/78 ,  H02M1/08 ,  H03K17/687 ,  H03K17/695

    CPC分类号： H01L27/0629 ,  H01L27/0682 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2924/19105 ,  H02M1/08 ,  H03K17/04123 ,  H03K17/166 ,  H01L2924/00014

    摘要： A switching circuit includes: a first switching element (Q1); a resistor (11) inserted between a control electrode (G) of the first switching element (Q1) and a control circuit (13) which performs switching control on the first switching element (Q1); and a first capacitor (15) and a second switching element (14) connected between the control electrode (G) of the first switching element (Q1) and a low potential-side electrode (S) of the first switching element (Q1). A high potential-side electrode of the second switching element (14) is connected to the control electrode (G) of the first switching element (Q1). A low potential-side electrode of the second switching element (14) is connected to one electrode of the first capacitor (15). The other electrode of the first capacitor (15) is connected to the low potential-side electrode (S) of the first switching element (Q1). A control electrode of the second switching element (14) is connected to an electrode of the resistor (11) connected to the control circuit (13).

    摘要翻译： 开关电路包括：第一开关元件（Q1）; 插入在第一开关元件（Q1）的控制电极（G）和对第一开关元件（Q1）进行开关控制的控制电路（13）之间的电阻器（11）; 以及连接在第一开关元件（Q1）的控制电极（G）和第一开关元件（Q1）的低电位侧电极（S）之间的第一电容器（15）和第二开关元件（14）。 第二开关元件（14）的高电位侧电极连接到第一开关元件（Q1）的控制电极（G）。 第二开关元件（14）的低电位侧电极连接到第一电容器（15）的一个电极。 第一电容器（15）的另一个电极连接到第一开关元件（Q1）的低电位侧电极（S）。 第二开关元件（14）的控制电极连接到与控制电路（13）连接的电阻器（11）的电极。

    SEMICONDUCTOR CAPACITOR
    8.
    发明公开
    SEMICONDUCTOR CAPACITOR 审中-公开

    公开(公告)号：EP3496137A1

    公开(公告)日：2019-06-12

    申请号：EP16911662.1

    申请日：2016-08-05

    申请人： Nissan Motor Co., Ltd.

    发明人： HAYAMI, Yasuaki ,  HAYASHI, Tetsuya ,  ZUSHI, Yusuke ,  NI, Wei ,  OKUBO, Akinori

    IPC分类号： H01L21/822 ,  H01L27/04

    摘要： To meet various requirements with a circuit formed from a semiconductor substrate.
    The present invention is provided with a semiconductor substrate (2A), an electrode group (4) that is formed on the semiconductor substrate (2A), and insulators (2B), wherein a plurality of capacitors (C1-C3) are formed. The plurality of capacitors (C1-C3) have a structure in which the insulators (2B) are sandwiched between each electrode of the electrode group (4). At least one of the plurality of capacitors (C1-C3) is set to be different in at least one of a tolerance, which is a capability of the capacitors (C1-C3) to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors (C1-C3).