公开(公告)号：EP1376669A4

公开(公告)日：2006-01-04

申请号：EP02708711

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO TETSUYA

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A micro wave plasma processing device, wherein a tapered surface for relieving a variation in impedance and a member having an intermediate dielectric constant are installed between a micro wave feeding wave guide and a micro wave antenna, whereby the formation of reflected wave at the connection part between the micro wave feeding wave guide and the micro wave antenna can be suppressed to increase a power feeding efficiency and suppress discharge so as to stabilize the formation of plasma in the plasma processing device.

摘要翻译： 在微波等离子体处理装置中，通过在微波供应波导与微波天线之间设置锥面或具有介质介电常数的构件，微波提供波导与微波天线之间的接合单元的微波反射减小， 以缓和阻抗变化。 因此，提高供电效率，减少放电确保等离子体的稳定形成。

公开(公告)号：EP1403913A4

公开(公告)日：2006-02-08

申请号：EP02743801

申请日：2002-07-03

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI ,  HIRAYAMA M ,  GOTO T

IPC分类号： H01L21/324 ,  H01L21/00 ,  H01L21/30 ,  H01L21/32 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： H01L21/67115 ,  H01L21/3003 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67109 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78603

摘要： A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.

摘要翻译： 基板处理装置具有设置有用于保持待处理基板的保持台的处理空间。 在处理空间中配置氢催化构件以面对衬底，并将氢分子分解成氢自由基H *。 气体供给口设置在氢催化构件的与基板相反的一侧上的处理空间中，用于供给至少包含氢气的处理气体。 氢催化构件与保持架上的基板之间的间隔被设定为小于氢根H *可达到的距离。

公开(公告)号：EP1300876A4

公开(公告)日：2005-12-07

申请号：EP02707229

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA M ,  SUGAWA SHIGETOSHI ,  GOTO TETSUYA

IPC分类号： H01J37/32 ,  H01L21/31 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32238 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/3244

摘要： A plasma processing device comprises a processing vessel defined by an outer wall and having a holding block for holding a board to be processed, an exhaust system connected to the processing vessel, a plasma gas feed section for feeding plasma gas to the processing vessel, a microwave antenna installed on the processing vessel in opposed relation to the board to be processed, a processing gas feeding section disposed between the board to be processed on the holding block and the plasma gas feeding section in opposed relation to the board to be processed, wherein the processing gas feeding section comprises a plurality of first openings formed in the processing vessel to allow the plasma gas to pass therethrough, a processing gas passageway adapted to be connected to a processing gas source, a plurality of second openings communicating with the processing gas passageway, a diffusion section disposed in opposed relation to the second openings for diffusing the processing gas which is discharged through the second openings.

摘要翻译： 等离子体处理装置包括由外壁限定的处理容器，具有用于保持待处理基板的台，连接到处理容器的抽空系统，用于将等离子体气体供应到处理容器内部的等离子体气体供给部 设置在处理容器上的与要处理的基板相对应的微波天线，以及处理气体供给部，其设置在台面上的待处理基板与等离子体气体供给部之间，以与待处理基板相对， 所述工艺气体供应部分包括用于通过形成在处理容器内部的等离子体的多个第一孔，能够连接到处理气体源的处理气体通道，与第二孔连通的多个第二孔 处理气体通道和与第二孔相对设置的用于扩散从第二孔释放的处理气体的扩散部分。

公开(公告)号：EP1300875A4

公开(公告)日：2006-12-20

申请号：EP02707228

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO T ,  HONGOH TOSHIAKI

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B25/10 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/3244

摘要： A micro wave plasma processing device having a radial line slot antenna capable of suppressing an abnormal discharge to increase the exciting efficiency of micro wave plasma, wherein the tip part of a power supply line in a coaxial wave guide is separated from a slot plate forming a radiating surface at a connection part between the radial line slot antenna and the coaxial wave guide.

公开(公告)号：EP1377138A4

公开(公告)日：2005-04-06

申请号：EP02707231

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO TETSUYA

IPC分类号： H05H1/00 ,  B01J19/08 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/32954 ,  H01J37/3299

摘要： A micro wave plasma processing device, wherein micro wave is led into a process chamber through a wave guide (26) to generate plasma, the power of the reflected wave reflected by the plasma generated in the process chamber is monitored by a reflection monitor (40) and a power monitor (42), the frequency of the micro wave generated by a magnetron (24) is monitored by an incident monitor (36) and a frequency monitor (48), and a power fed to the magnetron (24) is controlled based on the monitored power and frequency of the reflected wave, whereby the density of the plasma can be controlled at a constant.

公开(公告)号：EP1592045A4

公开(公告)日：2010-09-08

申请号：EP04706361

申请日：2004-01-29

申请人： SHINETSU HANDOTAI KK ,  OHMI TADAHIRO

发明人： YAMANAKA HIDEKI ,  DEMIZU KIYOSHI ,  OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  SUGAWA SHIGETOSHI

IPC分类号： C30B29/06 ,  H01L21/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/78

CPC分类号： H01L21/28167 ,  H01L21/02008 ,  H01L21/02027 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02658 ,  H01L29/045

摘要： The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a orientation on the main surface.

摘要翻译： 本发明是为了制造用于半导体集成电路器件的硅半导体衬底，在{100}面作为载流子迁移率，尤其是作为n型FET的载流子的电子迁移率中，作为 并且提供一种硅半导体基板及其制造方法，其中采用常规的RCA清洗而不使用特殊的清洁，并且基板的表面在原子水平上被平坦化，从而降低其表面粗糙度 而不使用自由基氧化。 本发明提供了一种硅半导体衬底，包括：{110}面或从{110}面倾斜作为衬底的主表面的平面; 以及沿着主表面沿<110>方向布置在原子级的台阶。

公开(公告)号：EP1347507A4

公开(公告)日：2005-09-07

申请号：EP01272910

申请日：2001-12-27

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI ,  HIRAYAMA MASAKI ,  SHIRAI YASUYUKI

IPC分类号： H01B3/00 ,  H01B3/02 ,  H01L21/28 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8239 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/2822 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： A film forming method for a semiconductor device formed on a silicon substrate and including a plurality of transistors or capacitors, wherein hydrogen present in advance on at least part of the surface of the silicon is removed by using plasma by a first inert gas on the silicon surface, then plasma by a mixed gas of a second inert gas and one or more kinds of gas molecules is produced, and a silicon compound layer containing at least part of the elements constituting the gas molecules is formed on the silicon substrate surface.

摘要翻译： 在半导体器件中包括基于硅的晶体管或电容器的多个膜形成方法，有预先至少在硅表面的一部分存在氢，和成膜方法通过将硅表面暴露于移除氢 第一惰性气体等离子体。 有硅化合物后，层的同时，通过使用第二惰性气体和一种或多种气体分子的混合气体生成等离子体，求thatthere形成含有至少一小块一硅酮系化合物层形成在硅气体的表面上 的元素构成的气体分子，硅气体的表面上。

公开(公告)号：EP1265276A4

公开(公告)日：2005-07-13

申请号：EP01912316

申请日：2001-03-13

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI

IPC分类号： C23C8/02 ,  C23C8/36 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/792 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.

公开(公告)号：EP1306751A4

公开(公告)日：2009-05-06

申请号：EP01936862

申请日：2001-06-06

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  MORIMOTO TATSUO ,  NAKADA AKIRA ,  SUGAWA SHIGETOSHI

IPC分类号： G06F9/38 ,  G06F9/445 ,  G06F11/00

CPC分类号： G06F9/44505 ,  G06F9/3897

摘要： Circuitry management information having circuitry information for altering the circuitry of an FPGA (12) is stored in a memory (13) and a circuitry management unit (11) reads out the circuitry management information from the memory (13) depending on information related to an instruction group supplied externally through a signal line group (14). Circuitry of the FPGA (12) is altered according to the circuitry management information thus read out and processing of the instruction group is executed to convert information processing by software into information processing by hardware in real time thus executing information processing at high rate while shortening the verification time of software and developing a software in a short period with high efficiency.

公开(公告)号：EP1265279A4

公开(公告)日：2004-11-24

申请号：EP01912317

申请日：2001-03-13

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SUGAWA SHIGETOSHI

IPC分类号： C23C8/02 ,  C23C8/36 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/792 ,  H01L29/788

CPC分类号： H01L21/31641 ,  C23C8/02 ,  C23C8/36 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/31637 ,  H01L21/31662 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42324

摘要： A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.