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公开(公告)号:EP3128539A4
公开(公告)日:2017-12-27
申请号:EP14835686
申请日:2014-03-27
发明人: MAKINO YASUTOMO
IPC分类号: H01L21/50 , H01L21/288 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/28 , H01L23/31 , H01L23/495 , H01L23/50 , H01L25/065
CPC分类号: H01L23/49541 , H01L21/2885 , H01L21/4821 , H01L21/4835 , H01L21/4842 , H01L21/50 , H01L21/561 , H01L21/565 , H01L23/28 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/49551 , H01L23/49575 , H01L23/49582 , H01L23/50 , H01L24/05 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/92 , H01L24/97 , H01L25/0655 , H01L2224/05124 , H01L2224/05554 , H01L2224/05624 , H01L2224/29101 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/32245 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/78301 , H01L2224/83192 , H01L2224/83801 , H01L2224/83862 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/15747 , H01L2924/17701 , H01L2924/17747 , H01L2924/181 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要: In a method of manufacturing a semiconductor device according to an embodiment, a lead frame is provided, the lead frame having a trench part formed thereon so as to communicate bottom surfaces of a first lead and a second lead, which are coupled to each other between device regions adjacent to each other. Then, after a part of a coupling part between the first and second leads is cut by using a first blade, metal wastes formed inside the trench part are removed. Then, after the metal wastes are removed, a metal film is formed on exposed surfaces of the first and second leads by a plating method, and then, a remaining part of the coupling part between the first and second leads is cut by using a second blade. At this time, the cutting is performed so that the second blade does not contact the trench part.