Abstract:
A metallization layer that consists of a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the component. In another embodiment, the metallization layer has a post-annealing adhesive strength to silicon of at least about 100 MPa as measured by a mechanical shear test after exposure to a temperature of about 600°C for about 30 minutes, and the metallization layer remains structurally intact after exposure to a temperature of about 600°C for about 1000 hours. The metallization is useful for bonding with brazing alloys.
Abstract:
A method for bonding two components together including the steps of providing a first component, providing a second component, and locating a first eutectic bonding material between the first and second component. The first eutectic bonding material includes at least one of germanium, tin, or silicon. The method further includes the step of locating a second eutectic bonding material between the first and second component and adjacent to the first eutectic bonding material. The second eutectic bonding material includes gold. The method further includes the step of heating the first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of the first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of the first and second eutectic bonding materials. The method includes the further step of cooling the hypoeutectic alloy to form a solid solution alloy bonding the first and second components together.