Substrate with a metallization bonding layer
    1.
    发明公开
    Substrate with a metallization bonding layer 有权
    具有金属化粘合层的基板

    公开(公告)号:EP1722004A1

    公开(公告)日:2006-11-15

    申请号:EP06112158.8

    申请日:2006-04-03

    Abstract: A metallization layer that consists of a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the component. In another embodiment, the metallization layer has a post-annealing adhesive strength to silicon of at least about 100 MPa as measured by a mechanical shear test after exposure to a temperature of about 600°C for about 30 minutes, and the metallization layer remains structurally intact after exposure to a temperature of about 600°C for about 1000 hours. The metallization is useful for bonding with brazing alloys.

    Abstract translation: 由位于元件上的钽层,位于钽层上的钽硅化物层和位于钽硅化物层上的硅化铂层组成的金属化层。 在另一个实施例中,本发明是在部件上具有金属化层的部件。 在另一个实施例中,在暴露于约600℃的温度约30分钟后,通过机械剪切测试测量,金属化层对硅的后退火粘合强度为至少约100MPa,并且金属化层保持结构上 暴露于约600℃的温度约1000小时后完好无损。 金属化对于与钎焊合金结合是有用的。

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