公开(公告)号：EP3813106A1

公开(公告)日：2021-04-28

申请号：EP20202651.4

申请日：2020-10-19

申请人： Renesas Electronics Corporation

发明人： HASEGAWA, Kazunori ,  YATO, Yuichi ,  NAKAMURA, Hiroyuki ,  SATO, Yukihiro ,  SHIMOYAMA, Hiroya

IPC分类号： H01L23/495 ,  H01L23/00

摘要： A semiconductor device includes: a semiconductor chip including a field effect transistor for switching; a die pad on which the semiconductor chip is mounted via a first bonding material; a lead electrically connected to a pad for source of the semiconductor chip through a metal plate; a lead coupling portion formed integrally with the lead; and a sealing portion for sealing them. Aback surface electrode for drain of the semiconductor chip and the die pad are bonded via the first bonding material, the metal plate and the pad for source of the semiconductor chip are bonded via a second bonding material, and the metal plate and the lead coupling portion are bonded via a third bonding material. The first, second, and third bonding materials have conductivity, and an elastic modulus of each of the first and second bonding materials is lower than that of the third bonding material.

公开(公告)号：EP3355350A1

公开(公告)日：2018-08-01

申请号：EP18150713.8

申请日：2018-01-09

申请人： Renesas Electronics Corporation

发明人： NAKAMURA, Hiroyuki ,  SHIMOYAMA, Hiroya

IPC分类号： H01L23/495 ,  H01L25/16 ,  B62D5/04

CPC分类号： H01L23/49575 ,  B62D5/0406 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0655 ,  H01L27/0629 ,  H01L29/66992 ,  H01L29/78 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/09165 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/40499 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/49179 ,  H01L2224/49505 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83862 ,  H01L2224/84801 ,  H01L2224/84862 ,  H01L2224/85013 ,  H01L2224/92246 ,  H01L2224/92247 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/01047

摘要： The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.