公开(公告)号：EP4434086A1

公开(公告)日：2024-09-25

申请号：EP21968363.8

申请日：2021-12-17

申请人： Vishay Siliconix, LLC

发明人： CHEE CHIAN, Lim ,  KWANG HWEE, Tuang ,  TEOH, Yew-Khuan ,  LIN, Barry ,  LAI, Stanley

IPC分类号： H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L21/4842

公开(公告)号：EP4365941A1

公开(公告)日：2024-05-08

申请号：EP22205356.3

申请日：2022-11-03

申请人： Nexperia B.V.

发明人： Yandoc, Ricardo ,  Milo, Dolores

IPC分类号： H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L23/49537 ,  H01L24/34

摘要： According to a first example of the disclosure, a locking system for a semiconductor device is proposed. The locking system incorporates or comprises a locking clip and a lead frame, wherein the lead frame comprises a first lead frame surface and a second lead frame surface opposite the first lead frame surface. The locking clip comprises a first locking clip surface and a second locking clip surface opposite the first locking clip surface, and comprises a first locking means. Also, the lead frame comprises a second locking means. The first locking means are structured to align with the second locking means, such that a movement of the locking clip relative to the lead frame is possible in only one direction, and wherein the locking clip is placed on the lead frame, such that the first locking clip surface of the locking clip is in contact with the second lead frame surface of the lead frame. This configuration prevents clip swaying during assembly and maximizes the use of copper material for both clips and lead frame components while making the density of manufactured semiconductor devices higher. Additionally, the disclosure also pertains to a semiconductor device and a method for manufacturing such semiconductor device.

公开(公告)号：EP3474320A2

公开(公告)日：2019-04-24

申请号：EP18197397.5

申请日：2018-09-28

申请人： Semiconductor Components Industries, LLC

发明人： TEYSSEYRE, Jerome ,  ESTACIO, Maria Cristina ,  IM, Seungwon

IPC分类号： H01L23/373 ,  H01L23/46 ,  H01L23/31 ,  H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L25/07

CPC分类号： H01L23/49575 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/34 ,  H01L24/40 ,  H01L29/1608 ,  H01L2224/40111 ,  H01L2224/40137 ,  H01L2224/40245

摘要： In a general aspect, an apparatus can include a package including a common gate conductor, a first silicon carbide die having a die gate conductor, and a second silicon carbide die having a die gate conductor. The apparatus can include a first conductive path between the common gate conductor and the die gate conductor of the first silicon carbide die and a second conductive path between the common gate conductor and the die gate conductor of the second silicon carbide die where the first conductive path has a length substantially equal to a length of the second conductive path.

公开(公告)号：EP2763160B1

公开(公告)日：2018-12-12

申请号：EP11873214.8

申请日：2011-09-30

申请人： Renesas Electronics Corporation

发明人： KANAZAWA, Takamitsu ,  AKIYAMA, Satoru

IPC分类号： H01L21/60 ,  H01L21/822 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/04 ,  H01L21/82 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00 ,  H01L27/02 ,  H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/808 ,  H01L29/10 ,  H01L29/16 ,  H01L23/538

CPC分类号： H01L25/072 ,  H01L21/8213 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/0617 ,  H01L27/088 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/808 ,  H01L29/8083 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/3701 ,  H01L2224/3702 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40105 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/84

摘要： Technology capable of improving reliability of a semiconductor device is provided. In the present invention, a gate pad GPj formed on a front surface of a semiconductor chip CHP1 is disposed so as to be closer to a source lead SL than to other leads (a drain lead DL and a gate lead GL). As a result, according to the present invention, a distance between the gate pad GPj and the source lead SL can be shortened, and thus a length of the wire Wgj for connecting the gate pad GPj and the source lead SL together can be shortened. Thus, according to the present invention, a parasitic inductance that is present in the wire Wgj can be sufficiently reduced.

公开(公告)号：EP3355350A1

公开(公告)日：2018-08-01

申请号：EP18150713.8

申请日：2018-01-09

申请人： Renesas Electronics Corporation

发明人： NAKAMURA, Hiroyuki ,  SHIMOYAMA, Hiroya

IPC分类号： H01L23/495 ,  H01L25/16 ,  B62D5/04

CPC分类号： H01L23/49575 ,  B62D5/0406 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0655 ,  H01L27/0629 ,  H01L29/66992 ,  H01L29/78 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/09165 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/40499 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/49179 ,  H01L2224/49505 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83862 ,  H01L2224/84801 ,  H01L2224/84862 ,  H01L2224/85013 ,  H01L2224/92246 ,  H01L2224/92247 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/01047

摘要： The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

公开(公告)号：EP3203510A4

公开(公告)日：2018-05-09

申请号：EP14863035

申请日：2014-09-29

申请人： SHINDENGEN ELECTRIC MFG

发明人： MIZAWA YUICHI ,  NAGASE TAKEO

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L23/48

CPC分类号： H01L23/49513 ,  H01L21/56 ,  H01L23/29 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/562 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/29139 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49171 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/8302 ,  H01L2224/83048 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/8392 ,  H01L2224/83948 ,  H01L2224/8485 ,  H01L2224/8592 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2924/014

摘要： In a semiconductor package, surfaces of a die pad, a semiconductor element, a connecting member, and a lead are subjected to a surface treatment with a silane coupling agent. A first surface of a plurality of surfaces of the semiconductor device includes a first region where an organic substance is exposed, and a second region where an inorganic substance is exposed, the first surface being bonded with the connecting member. A bonding strength between the first region and the sealing resin is weaker than a bonding strength between the second region and the sealing resin.

公开(公告)号：EP3143642A4

公开(公告)日：2018-01-10

申请号：EP15792595

申请日：2015-05-15

申请人： TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN LTD

发明人： VILUAN RAMIL ALFONSO ,  SAMSON ROXANNA BAUZON ,  ESQUEJO JEFFREY DE GUZMAN ,  SANCHEZ RAMICES JULIAN

IPC分类号： H01L21/687 ,  H05K1/18

CPC分类号： H01L23/49517 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： Gang clips (500) having a flat area (510), a ridge (510a), and tie bars (530b) extending from the flat area, the end portions of the ties bars aligned in a common x-direction; a plurality of gang clips having respective end portions of tie bars merged in x-direction to form an elongated chain (701) of clips; and a plurality of chains arrayed parallel to each other, free of tie bars between adjacent chains, the plurality having the chain ends tied at both ends (730a) to rails (740) normal to the chains to form a matrix (700) of clips having the rails as a stable frame.

公开(公告)号：EP3125287A1

公开(公告)日：2017-02-01

申请号：EP14887349.0

申请日：2014-03-28

申请人： Mitsubishi Electric Corporation

发明人： FUSHIE, Shunsuke ,  KAWANO, Yu ,  ASAO, Yoshihito ,  MORI, Akihiko

IPC分类号： H01L23/29 ,  H01L23/36

CPC分类号： H01L23/49568 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/42 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49558 ,  H01L23/49575 ,  H01L23/49861 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Provided is a semiconductor module having an integrated insulating sheet structure, wherein detachment of the insulating sheet can be suppressed and improved reliability of the semiconductor module is achieved, by adopting a structure in which at least one location of the insulating sheet is sunken inside a mold, and a sealing resin body and the insulating sheet of the semiconductor module form a protrusion.

摘要翻译： 提供一种具有集成绝缘片结构的半导体模块，其中可以通过采用这样的结构来抑制绝缘片的剥离和提高半导体模块的可靠性，其中绝缘片的至少一个位置在模具内凹陷 并且密封树脂体和半导体模块的绝缘片形成突起。

公开(公告)号：EP2871676B1

公开(公告)日：2017-01-04

申请号：EP13813359.0

申请日：2013-05-27

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： IKEUCHI, Hiroki

IPC分类号： H01L25/07 ,  H01L25/18 ,  H02M7/48 ,  H01L23/495 ,  H01L23/433 ,  H01L23/31

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/645 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32245 ,  H01L2224/3701 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8382 ,  H01L2224/83851 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8482 ,  H01L2224/8485 ,  H01L2224/92247 ,  H01L2224/92248 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/003 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01004 ,  H01L2924/00014

公开(公告)号：EP2372763A3

公开(公告)日：2016-07-27

申请号：EP11160367.6

申请日：2011-03-30

申请人： Hitachi, Ltd.

发明人： Azuma, Katsunori

IPC分类号： H01L25/07 ,  H01L23/31 ,  H01L23/367 ,  H01L23/495 ,  H01L23/051 ,  H01L23/433 ,  H01L23/00 ,  H01L25/11 ,  H01L23/473

CPC分类号： H01L24/73 ,  H01L23/051 ,  H01L23/3121 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49524 ,  H01L23/49551 ,  H01L24/31 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L25/115 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/73265 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： In a power semiconductor module, a semiconductor device (40) including electrode surfaces for connection on its front side and back side is connected on its back side to a first extraction electrode (60) through soldering (20); a metal surface of one side of a laminated conductor (30) having a laminated structure in which at least two types of metals (32,33) are laminated is directly, intermetallically connected to the front side of the semiconductor device; a second extraction electrode (10) is connected to a metal surface of another side of the laminated conductor through soldering (21); and the laminated conductor (30) includes a plurality of arch-like protrusions (35) and a straight section (36) connecting the arch-like protrusions, the straight section (36) is connected with the front side of the semiconductor device (40), and the protrusions (35) are connected with the second extraction electrode (10).

摘要翻译： 在功率半导体模块中，包括在其正面和背面上用于连接的电极表面的半导体器件（40）的背面通过焊接（20）连接到第一引出电极（60）; 具有其中层叠至少两种金属（32,33）的层压结构的层压导体（30）的一侧的金属表面直接金属连接到半导体器件的前侧; 通过焊接（21）将第二引出电极（10）连接到层压导体的另一侧的金属表面; （30）包括多个拱形突起（35）和连接拱形突起的直线部分（36），直线部分（36）与半导体器件（40）的正面 ），并且突起（35）与第二引出电极（10）连接。