公开(公告)号：EP4220692B1

公开(公告)日：2024-10-09

申请号：EP23153878.6

申请日：2023-01-30

IPC分类号： H01L21/60 ,  H01L23/492

CPC分类号： H01L2224/8480120130101 ,  H01L2224/3224520130101 ,  H01L2224/4813720130101 ,  H01L2224/4824720130101 ,  H01L2224/4024520130101 ,  H01L2224/7326520130101 ,  H01L2224/8438520130101 ,  H01L2224/8413820130101 ,  H01L24/40 ,  H01L24/84 ,  H01L2224/3714720130101 ,  H01L24/32 ,  H01L2224/8434520130101 ,  H01L2224/3701120130101 ,  H01L2224/4917520130101 ,  H01L2224/4917120130101 ,  H01L24/73 ,  H01L24/48 ,  H01L24/37

公开(公告)号：EP4052881B1

公开(公告)日：2024-08-21

申请号：EP21832648.6

申请日：2021-04-23

IPC分类号： H01L23/053 ,  H01L21/56 ,  H01L25/18 ,  H01L25/07 ,  H01L23/28 ,  B29C45/27 ,  B29C45/00 ,  H01L23/00

CPC分类号： H01L25/18 ,  H01L2224/060320130101 ,  H01L2224/4813920130101 ,  H01L23/053 ,  H01L25/072 ,  B29C45/0025 ,  B29C2045/002720130101 ,  B29C45/0046 ,  B29C45/27 ,  H01L2224/4822720130101 ,  H01L2224/4514420130101 ,  H01L2224/4514720130101 ,  H01L2224/4512420130101 ,  H01L2224/4501420130101 ,  H01L2224/3712420130101 ,  H01L2224/3714720130101 ,  H01L2224/371620130101 ,  H01L24/45 ,  H01L24/37 ,  H01L24/06 ,  H01L2924/1309120130101 ,  H01L2924/1305520130101 ,  H01L2924/120320130101 ,  H01L2924/1027220130101 ,  H01L2924/1025320130101 ,  H01L2924/103320130101 ,  H01L24/40 ,  H01L2224/4022520130101 ,  H01L24/48

公开(公告)号：EP2763160B1

公开(公告)日：2018-12-12

申请号：EP11873214.8

申请日：2011-09-30

申请人： Renesas Electronics Corporation

发明人： KANAZAWA, Takamitsu ,  AKIYAMA, Satoru

IPC分类号： H01L21/60 ,  H01L21/822 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/04 ,  H01L21/82 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00 ,  H01L27/02 ,  H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/808 ,  H01L29/10 ,  H01L29/16 ,  H01L23/538

CPC分类号： H01L25/072 ,  H01L21/8213 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0207 ,  H01L27/0617 ,  H01L27/088 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/808 ,  H01L29/8083 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/3701 ,  H01L2224/3702 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40105 ,  H01L2224/40145 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/84

摘要： Technology capable of improving reliability of a semiconductor device is provided. In the present invention, a gate pad GPj formed on a front surface of a semiconductor chip CHP1 is disposed so as to be closer to a source lead SL than to other leads (a drain lead DL and a gate lead GL). As a result, according to the present invention, a distance between the gate pad GPj and the source lead SL can be shortened, and thus a length of the wire Wgj for connecting the gate pad GPj and the source lead SL together can be shortened. Thus, according to the present invention, a parasitic inductance that is present in the wire Wgj can be sufficiently reduced.

公开(公告)号：EP3355350A1

公开(公告)日：2018-08-01

申请号：EP18150713.8

申请日：2018-01-09

申请人： Renesas Electronics Corporation

发明人： NAKAMURA, Hiroyuki ,  SHIMOYAMA, Hiroya

IPC分类号： H01L23/495 ,  H01L25/16 ,  B62D5/04

CPC分类号： H01L23/49575 ,  B62D5/0406 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0655 ,  H01L27/0629 ,  H01L29/66992 ,  H01L29/78 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/09165 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/40499 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/49179 ,  H01L2224/49505 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83862 ,  H01L2224/84801 ,  H01L2224/84862 ,  H01L2224/85013 ,  H01L2224/92246 ,  H01L2224/92247 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/01047

摘要： The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.

公开(公告)号：EP3216058A4

公开(公告)日：2018-07-04

申请号：EP15856210

申请日：2015-11-04

申请人： TEXAS INSTRUMENTS INC

发明人： EUGENE LEE LEE HAN MENG ,  BIN ABDUL AZIZ ANIS FAUZI ,  FEN SUEANN LIM WEI

IPC分类号： H01L27/085 ,  H01L23/495

CPC分类号： H01L25/50 ,  H01L21/4825 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/4952 ,  H01L23/49534 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49844 ,  H01L24/34 ,  H01L24/37 ,  H01L24/38 ,  H01L24/48 ,  H01L24/85 ,  H01L24/97 ,  H01L25/071 ,  H01L25/165 ,  H01L25/18 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599

摘要： A method for forming a stacked semiconductor package includes providing a bottom leadframe (LF) panel including LFs downset each including at least a plurality of terminals. Low side (LS) transistors are attached to the first die attach area. A first clip panel including first clips downset and interconnected are placed on the bottom LF panel. A dielectric interposer is attached on the first clips over the LS transistors. High side (HS) transistors are attached on the interposers. A second clip panel including a plurality of second clips is mated to interconnect to the HS transistors including mating together the second clip panel, first clip panel and bottom LF panel. The LFs can include a second die attach area, and a controller die attached on the second die attach area, and then pads of the controller die wirebonded to the plurality of terminals.

公开(公告)号：EP3167481A1

公开(公告)日：2017-05-17

申请号：EP15729156.8

申请日：2015-06-15

申请人： Heraeus Deutschland GmbH & Co. KG

发明人： WIESELER, Elisa ,  KRÜGER, Frank ,  BLEIFUSS, Martin ,  SCHÄFER, Michael ,  HINRICH, Andreas ,  KLEIN, Andreas Steffen

IPC分类号： H01L23/485 ,  H01L21/48

CPC分类号： H01L24/48 ,  H01L21/48 ,  H01L21/6836 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/03003 ,  H01L2224/03334 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/0603 ,  H01L2224/27003 ,  H01L2224/27505 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40491 ,  H01L2224/45014 ,  H01L2224/45147 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8384 ,  H01L2224/8484 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The invention relates to a method for producing a substrate adapter (27), which is used in particular to contact semiconductor elements (32), comprising the following steps: - applying a contacting material (13) to one side (12) of a carrier (10), - structuring an electrically conductive metal element, - positioning the structured metal element (15) on the carrier (10) in such a way that a first side (17) of the metal element (15) and the side (12) of the carrier (10) provided with the contacting material (13) are arranged facing each other, - joining the structured metal element (15) to the carrier (10) provided with contacting material (13), - applying a transfer element (22) to a second side (20) of the structured metal element (15), and - separating the transfer element (22) and/or the structured metal element (15), which is joined by means of contacting material (13), for further processing.

摘要翻译： 本发明涉及一种用于制造其特别用于接触半导体元件（32），其包括以下步骤的基片的适配器（27）全部： - 将接触材料（13）到载体的一侧（12） （10） - 导电金属元件的结构， - 所述载体（10）上的结构的金属元件（15）定位在寻求一种方法所做的金属元件（15）和侧部的第一侧（17）（12 ）提供与所述接触材料（13）的载体（10）被布置成面对海誓山盟， - 接合结构的金属元件（15），以提供具有接触材料（13载体（10））， - 将传递元件（ 22）到所述结构化金属元件（15），和的第二侧（20） - 其通过接触材料而接合分离的传送元件（22）和/或结构化金属元件（15），所有（13） 用于进一步处理。

公开(公告)号：EP2871676B1

公开(公告)日：2017-01-04

申请号：EP13813359.0

申请日：2013-05-27

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： IKEUCHI, Hiroki

IPC分类号： H01L25/07 ,  H01L25/18 ,  H02M7/48 ,  H01L23/495 ,  H01L23/433 ,  H01L23/31

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/645 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32245 ,  H01L2224/3701 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40095 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8382 ,  H01L2224/83851 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/8482 ,  H01L2224/8485 ,  H01L2224/92247 ,  H01L2224/92248 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/003 ,  H01L2924/00 ,  H01L2224/83205 ,  H01L2924/00012 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01004 ,  H01L2924/00014

公开(公告)号：EP2985614A4

公开(公告)日：2016-12-21

申请号：EP13882020

申请日：2013-04-11

申请人： RENESAS ELECTRONICS CORP

发明人： ISHII TOSHITSUGU ,  MAKIHIRA NAOHIRO ,  IWASAKI HIDEKAZU ,  MATSUHASHI JUN

IPC分类号： G01R1/067 ,  G01R1/04 ,  G01R31/28 ,  G01R31/40

CPC分类号： H01L22/14 ,  G01R1/0466 ,  G01R1/0483 ,  G01R1/06738 ,  G01R31/2874 ,  G01R31/40 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead.

公开(公告)号：EP3082243A1

公开(公告)日：2016-10-19

申请号：EP14870416.6

申请日：2014-12-12

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： ISHIMARU, Tetsuya ,  MORI, Mutsuhiro ,  SAKANO, Junichi ,  ONDA, Kohhei

IPC分类号： H02M7/12 ,  H01L25/07 ,  H02K11/00 ,  H02K19/36

CPC分类号： H01L29/7808 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/373 ,  H01L23/544 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/66 ,  H01L24/69 ,  H01L24/73 ,  H01L24/75 ,  H01L24/78 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/92 ,  H01L25/16 ,  H01L29/7805 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/37012 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40499 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48499 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/75754 ,  H01L2224/78753 ,  H01L2224/78802 ,  H01L2224/83101 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/9221 ,  H01L2924/00011 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19107 ,  H02K11/00 ,  H02K11/046 ,  H02K19/36 ,  H02M1/08 ,  H02M7/003 ,  H02M7/217 ,  H02M7/219 ,  H02M2001/0006 ,  H02P9/00 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/83 ,  H01L2224/84

摘要： The semiconductor device (S1) has a first external electrode (101) having an outer peripheral section (101s), which has a circular shape in top plan view and which is to be attached to an alternator (Ot). On the first external electrode (101) there mounted: a MOSFET chip (103); a control circuitry (104) to which voltages at or a current flowing between a first main terminal (103d) and a second main terminal (103s) of the MOSFET chip (103) is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate (103g) of the MOSFET chip(103); and a capacitor (105) for providing a power supply to the control circuitry (104). The semiconductor device further has a second external electrode (107) disposed opposite to the first external electrode with respect to the MOSFET chip (103). An electrical connection is made between the first main terminal (103d) of the MOSFET chip (103) and the first external electrode (101), and between the second main terminal (103s) of the MOSFET chip (103) and the second external electrode (107).

摘要翻译： 半导体装置（S1）具有具有外周部（101s）的第一外部电极（101），其在顶部平面图中具有圆形形状，并且附接到交流发电机（Ot）。 在第一外部电极（101）上安装有：一个MOSFET芯片（103）; 输入在MOSFET芯片（103）的第一主端子（103d）和第二主端子（103s）之间流动的电流或电流的控制电路（104），其基于电压或 电流，施加到MOSFET芯片（103）的栅极（103g）的控制信号; 以及用于向控制电路（104）提供电源的电容器（105）。 半导体器件还具有相对于MOSFET芯片（103）与第一外部电极相对设置的第二外部电极（107）。 在MOSFET芯片（103）的第一主端子（103d）和第一外部电极（101）之间以及在MOSFET芯片（103）的第二主端子（103s）和第二外部电极 （107）。

公开(公告)号：EP2960936A4

公开(公告)日：2016-10-19

申请号：EP13875898

申请日：2013-02-22

申请人： HITACHI LTD

发明人： TSUYUNO NOBUTAKE ,  HOZOJI HIROSHI ,  NAITO TAKASHI ,  KODAMA MOTOMUNE ,  MIYAGI MASANORI ,  AOYAGI TAKUYA

IPC分类号： H01L23/29 ,  H01L23/053 ,  H01L23/24 ,  H01L23/28 ,  H01L23/31 ,  H01L25/07 ,  H01L25/16

CPC分类号： H01L23/291 ,  H01L23/053 ,  H01L23/24 ,  H01L23/3107 ,  H01L23/564 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/49 ,  H01L25/072 ,  H01L25/16 ,  H01L2224/37124 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8389 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2224/8485 ,  H01L2224/8489 ,  H01L2224/8592 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention is intended to increase the moisture resistance of a resin-sealed electronic control device. The resin-sealed electronic control device includes: a semiconductor chip (2); a chip capacitor (3); a chip resistor (4); a bonding member (5); a substrate (6); a case (7); a heat radiating plate (8); a glass coating (9); and a first sealing material (10). The glass coating (9) directly covers the electronic circuit formed by the element group including: the semiconductor chip (2); the chip capacitor (3); and the chip resistor (4), the bonding member (5) and the substrate (6), and is sealed by the first sealing material (10). By being water impermeable, the glass coating (9) prevents water absorption in the vicinity of the element group, and can prevent an increase in the leak current of the semiconductor chip (2) due to water absorption, and an insulation performance drop such as lowered insulation resistance caused by migration within the element group.