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    RESISTIVE MEMS HUMIDITY SENSOR
    2.
    发明公开
    RESISTIVE MEMS HUMIDITY SENSOR 审中-公开
    电阻式微机电传感器

    公开(公告)号：EP2984474A1

    公开(公告)日：2016-02-17

    申请号：EP13821548.8

    申请日：2013-12-17

    申请人： Robert Bosch GmbH ,  Feyh, Ando ,  Graham, Andrew ,  Samarao, Ashwin ,  Yama, Gary ,  O'Brien, Gary

    发明人： FEYH, Ando ,  GRAHAM, Andrew ,  SAMARAO, Ashwin ,  YAMA, Gary ,  O'BRIEN, Gary

    IPC分类号： G01N27/12

    CPC分类号： G01N27/121

    摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.

    摘要翻译： 半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。 感测膜限定绝缘膜上的第一位置和第二位置之间的至少一个导电路径。 第一电路连接在绝缘层上的第一位置电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。 控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。 感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

    EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE
    6.
    发明公开
    EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
    EPI-POLY-刻蚀阻挡层关于外部ABSTANDSHALTER定义电极

    公开(公告)号：EP2973665A1

    公开(公告)日：2016-01-20

    申请号：EP14770043.9

    申请日：2014-03-08

    申请人： Robert Bosch GmbH ,  Graham, Andrew ,  Yama, Gary ,  O'Brien, Gary

    发明人： GRAHAM, Andrew ,  YAMA, Gary ,  O'BRIEN, Gary

    IPC分类号： H01L21/28

    摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.

    PRESSURE SENSOR WITH DOPED ELECTRODE
    9.
    发明公开
    PRESSURE SENSOR WITH DOPED ELECTRODE 审中-公开
    含掺杂LEAD压力传感器

    公开(公告)号：EP2815219A1

    公开(公告)日：2014-12-24

    申请号：EP13709272.2

    申请日：2013-02-14

    申请人： Robert Bosch GmbH ,  O'Brien, Gary ,  Graham, Andrew

    发明人： O'BRIEN, Gary ,  GRAHAM, Andrew

    IPC分类号： G01L9/00

    CPC分类号： B81B3/0021 ,  B81C1/00158 ,  G01L9/0073

    摘要： In one embodiment, a sensor device includes a bulk silicon layer, a first doped region of the bulk silicon layer of a first dopant type, a second doped region of the bulk silicon layer of a second dopant type, wherein the first dopant type is a type of dopant different from the second dopant type, the second doped region located at an upper surface of the bulk silicon layer and having a first doped portion bounded by the first doped region, a first cavity portion directly above the second doped region, and an upper electrode formed in an epitaxial layer, the upper electrode directly above the first cavity portion.